CN101771105A - 连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法 - Google Patents

连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法 Download PDF

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CN101771105A
CN101771105A CN201010003169A CN201010003169A CN101771105A CN 101771105 A CN101771105 A CN 101771105A CN 201010003169 A CN201010003169 A CN 201010003169A CN 201010003169 A CN201010003169 A CN 201010003169A CN 101771105 A CN101771105 A CN 101771105A
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郭玉钦
李铁强
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Abstract

一种利用磁控溅射法，连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法；其特征在于；清洗后的不锈钢卷材在磁控溅射镀膜成套生产线通过真空隔离窄缝伐(15-1-10)进入真空溅镀室(2)，(3)，(4)，(5)，(6)，(8)，(9)，(10)、在张力卷绕机(1)、(11)，的拖动下溅镀TiO2绝缘膜，Cu-Mo背电极膜，CIGS半导体P结膜、进行热处理，冷却后再溅镀InS或ZnS半导体n结膜，I-ZnO过渡层膜，AL:ZnO或ITO透明导电膜、焊接电极并封装EVA保护膜(14)，即制完成了太阳能光电池组件。其优点：连续生产线大规模工业化生产，质量隐定。

Description

连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法
技术领域：
本发明涉及一种利用磁控溅射法，连续生产线制备铜铟镓硒软体薄膜太阳能光电池技术。具体是一种由多个控溅射真空室组合为一体的连续制备软体薄膜式太阳能光电池组件的方法。
技术背景：
现有技术；专利申请号200910166260.5本人所发明的一种连续卷绕式制备铜铟镓硒[硫]软体薄膜太阳能电池组件的方法中；溅射CIGS膜的软件带箔继续均速行走进入硒化或硫化结晶炉内，进行硒或硫化结晶。硫化介质为Se或S气体炉中进行硒或硫化处理，利用氮气作载气。铜铟镓硒合金膜的基材带箔在硫化炉内150-600℃行走时间为10-15分钟后，通过真空隔离窄缝伐隔离，连续均速进入冷却室。将硒或硫化结晶后的铜铟镓硒(硫)基材带箔冷却，即完成了“P”型半导体薄膜的制备。
该技术的缺点；在硒或硫高温气氛中硒或硫化易爆炸并放出有毒气体对人体有害。另其它工艺路线也有不合理处
发明内容；
本发明的目的是；克服上述生产工艺的缺点，提供一种连续生产，工艺路线合理并能大规模的提高生产效率，保证产品质量的一种制备方法。
本发明的具体内容；
本发明提供一种利用磁控溅射法，连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法其特征在于；清洗后的不锈钢卷材在磁控溅射镀膜成套生产线张力卷绕机的拖动下，展为带箔，均速进入等离子辉光放电真空室进行清洗，通过真空隔离窄缝伐进入真空溅镀绝缘膜室，溅镀TiO2绝缘膜、再通过真空隔离窄缝伐进入真空溅镀背电极室，溅镀Cu-Mo背电极膜，再通过真空隔离窄缝伐进入P结真空溅镀室，溅镀CIGS半导体P结吸收膜、再通过真空隔离窄缝伐进入真空热处理室，在300---600℃氮气中进行热处理、再通过真空隔离窄缝伐进入真空冷却室，在氮气中冷去却250℃以下。再通过真空隔离窄缝伐，进入n结真空溅射室，溅镀InS或ZnS半导体n结膜、再通过真空隔离窄缝伐进入真空溅镀室，溅镀I-ZnO过渡层膜。再通过真空隔离窄缝伐进入真空溅镀室，溅镀AL:ZnO或ITO透明导电膜、由真空隔离窄缝伐封闭。再跟随已溅射膜后的带箔上，铺以隔层用的保护层，由后涨力卷绕机卷绕为卷材；而后由剪切机切为块状，再用超声波焊机焊接电极、并封装EVA保护膜即制完成了太阳能光电池组件。
磁控溅射镀膜成套设备生产线由真空泵抽为真空，送入工作气体氩气，由微抽分子泵保持工作压力。磁控溅射镀膜成套设备生产线在正常工作状况下不破坏真空度。
当生产线前置带卷将溅镀完结束时，可将前卷尾端和后卷始端进行搭接，以实现连续不停顿生产工效。全部系统，带箔溅镀材料厚度、结晶度、温度均采用闭环自控系统控制，以保证产品的质量。
附图说明；
图1“连续生产线制备铜铟镓硒软体薄膜太阳能光电池的系统原理示意图”
1，前置涨力卷绕机    2，等离子辉光放电清洗真空室
3，溅镀绝缘膜真空室  4，真空溅镀背电极室
5，P结真空溅镀室     6，真空热处理室
7，真空冷却室        8，n结真空溅镀室
9，过渡层真空溅镀室，   10，透明导电膜真空溅镀室，
11，后置涨力卷绕机，    12剪切机
13，超声波焊机          14封装EVA保护膜
15-1-
Figure G2010100031694D00031
隔离窄缝伐
参照附图说明具体实施方式；
在图“1”中；清洗后的不锈钢卷材在磁控溅射镀膜成套生产线张力卷绕机1、11，的拖动下展为带材匀速通过真空隔离窄缝伐15-1，进入等离子辉光放电真空室2，进行清洗、通过真空隔离窄缝伐15-2，进入真空溅镀绝缘膜室3，溅镀TiO2绝缘膜、再通过真空隔离窄缝伐15-3，进入真空溅镀背电极室4，溅镀Cu-Mo背电极膜，再通过真空隔离窄缝伐15-4进入P结真空溅镀室5，溅镀CIGS半导体P结吸收膜、再通过真空隔离窄缝伐15-5，进入真空热处理室6，在300---600℃氮气中进行热处理、再通过真空隔离窄缝伐15-6，进入真空冷却室7，在氮气中冷却250℃以下。再通过真空隔离窄缝伐，15-7，进入n结真空溅射室8，溅镀InS或ZnS半导体n结膜、再通过真空隔离窄缝伐15-8，进入真空溅镀室9，溅镀I-ZnO过渡层膜。再通过真空隔离窄缝伐15-9，进入真空溅镀室10，溅镀AL:ZnO或ITO透明导电膜、由真空隔离窄缝伐封闭15-10，再随机在已溅射膜后的带箔上，铺一隔层用的保护层，由后涨力卷绕机11，卷绕为卷材。而后由剪切机12，切为块状，再用超声波焊机13，焊接电极、并封装EVA保护膜14，即制完成了太阳能光电池组件。
磁控溅射镀膜成套设备生产线由真空泵抽为真空，送入工作气体氩气，由微抽分子泵保持工作压力。磁控溅射镀膜成套设备生产线在正常工作状况下不破坏真空度。

Claims (2)

1.一种连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法；它将清洗后的不锈钢卷材在磁控溅射镀膜成套生产线张力卷绕机(1)、(11)，的拖动下展为带材匀速通过真空隔离窄缝伐(15-1)进入等离子辉光放电真空室(2)，进行清洗、通过真空隔离窄缝伐(15-2)进入真空溅镀绝缘膜室(3)，溅镀TiO2绝缘膜、再通过真空隔离窄缝伐(15-3)进入真空溅镀背电极室(4)，溅镀Cu-Mo背电极膜，再通过真空隔离窄缝伐(15-4)进入P结真空溅镀室(5)，溅镀CIGS半导体P结吸收膜、再通过真空隔离窄缝伐(15-5)进入真空热处理室(6)，在300---600℃氮气中进行热处理、再通过真空隔离窄缝伐(15-6)进入真空冷却室(7)，在氮气中冷却250℃以下：再通过真空隔离窄缝伐，(15-7)进入n结真空溅射室(8)，溅镀InS或ZnS半导体n结膜、再通过真空隔离窄缝伐(15-8)进入真空溅镀室(9)，溅镀I-ZnO过渡层膜：再通过真空隔离窄缝伐(15-9)进入真空溅镀室(10)，溅镀AL:ZnO或ITO透明导电膜、由真空隔离窄缝伐封闭(15-10)、再随机在已溅射膜后的带箔上，铺一隔层用的保护层，由后涨力卷绕机(11)，卷绕为卷材；而后由剪切机(12)，切为块状，再用超声波焊机(13)，焊接电极、并封装EVA保护膜(14)，即制完成了太阳能光电池组件：磁控溅射镀膜成套设备生产线由真空泵抽为真空，送入工作气体氩气，由微抽分子泵保持工作压力。磁控溅射镀膜成套设备生产线在正常工作状况下不破坏真空度。
2.根据权利要求书(1)所述的连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法；其特征是；溅镀CIGS半导体P结吸收膜后的卷材带箔、通过真空隔离窄缝伐(15-5)进入真空热处理室(6)，在300---600℃氮气中进行热处理、1-10分钟替代了原来的硒化或硫化工艺。
CN201010003169A 2009-12-01 2010-01-10 连续生产线制备铜铟镓硒软体薄膜太阳能光电池的方法 Pending CN101771105A (zh)

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CN102373443A (zh) * 2010-08-19 2012-03-14 佳能安内华股份有限公司 等离子体处理装置和沉积方法
CN103460337A (zh) * 2010-12-27 2013-12-18 耐克西斯公司 Ⅰ-ⅲ-ⅵ2材料层和钼基体之间的改进的界面
CN103531659A (zh) * 2013-10-17 2014-01-22 研创应用材料（赣州）有限公司 一种制备真空卷对卷镀膜用可挠性基材及薄膜的方法
CN104334752A (zh) * 2012-05-23 2015-02-04 杰富意钢铁株式会社 不锈钢箔制太阳电池基板材料及其制造方法
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CN102373443A (zh) * 2010-08-19 2012-03-14 佳能安内华股份有限公司 等离子体处理装置和沉积方法
CN103460337A (zh) * 2010-12-27 2013-12-18 耐克西斯公司 Ⅰ-ⅲ-ⅵ2材料层和钼基体之间的改进的界面
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CN104334752A (zh) * 2012-05-23 2015-02-04 杰富意钢铁株式会社 不锈钢箔制太阳电池基板材料及其制造方法
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CN103531659B (zh) * 2013-10-17 2016-01-13 研创应用材料（赣州）股份有限公司 一种制备真空卷对卷镀膜用可挠性基材及薄膜的方法
CN103531659A (zh) * 2013-10-17 2014-01-22 研创应用材料（赣州）有限公司 一种制备真空卷对卷镀膜用可挠性基材及薄膜的方法
CN104716223A (zh) * 2013-12-11 2015-06-17 中国电子科技集团公司第十八研究所 柔性衬底卷对卷制膜退火一体化的制备方法
CN109502545A (zh) * 2018-10-10 2019-03-22 华南师范大学 硒化锗基太阳光分解水产氢电子器件、电极系统及其制备方法
CN109502545B (zh) * 2018-10-10 2020-08-11 华南师范大学 硒化锗基太阳光分解水产氢电子器件、电极系统及其制备方法
CN111584676A (zh) * 2019-02-15 2020-08-25 北京铂阳顶荣光伏科技有限公司 镀膜设备及连续镀膜方法
CN114871284A (zh) * 2022-05-06 2022-08-09 江西蓝微电子科技有限公司 一种键合金银合金丝的制备方法
CN114871284B (zh) * 2022-05-06 2024-07-23 江西蓝微电子科技有限公司 一种键合金银合金丝的制备方法

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