BR112012010642A2 - método para a formação de pelo menos um condutor elétrico sobre um material semicondutor e material semiconductor compreendendo pelo menos um condutor elétrico - Google Patents
método para a formação de pelo menos um condutor elétrico sobre um material semicondutor e material semiconductor compreendendo pelo menos um condutor elétricoInfo
- Publication number
- BR112012010642A2 BR112012010642A2 BR112012010642A BR112012010642A BR112012010642A2 BR 112012010642 A2 BR112012010642 A2 BR 112012010642A2 BR 112012010642 A BR112012010642 A BR 112012010642A BR 112012010642 A BR112012010642 A BR 112012010642A BR 112012010642 A2 BR112012010642 A2 BR 112012010642A2
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor material
- electrical conductor
- forming
- over
- conductor over
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title 2
- 239000000463 material Substances 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0957870A FR2952474B1 (fr) | 2009-11-06 | 2009-11-06 | Conducteur de cellule photovoltaique en deux parties serigraphiees haute et basse temperature |
PCT/EP2010/066863 WO2011054915A1 (fr) | 2009-11-06 | 2010-11-05 | Conducteur de cellule photovoltaïque en deux parties serigraphiees haute et basse temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112012010642A2 true BR112012010642A2 (pt) | 2016-04-05 |
Family
ID=42226580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112012010642A BR112012010642A2 (pt) | 2009-11-06 | 2010-11-05 | método para a formação de pelo menos um condutor elétrico sobre um material semicondutor e material semiconductor compreendendo pelo menos um condutor elétrico |
Country Status (10)
Country | Link |
---|---|
US (1) | US20120211856A1 (pt) |
EP (1) | EP2497118B1 (pt) |
JP (1) | JP5964751B2 (pt) |
KR (1) | KR101706804B1 (pt) |
CN (1) | CN102656703B (pt) |
BR (1) | BR112012010642A2 (pt) |
ES (1) | ES2457232T3 (pt) |
FR (1) | FR2952474B1 (pt) |
IN (1) | IN2012DN03863A (pt) |
WO (1) | WO2011054915A1 (pt) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10121915B2 (en) | 2010-08-27 | 2018-11-06 | Lg Electronics Inc. | Solar cell and manufacturing method thereof |
US20130147003A1 (en) * | 2011-12-13 | 2013-06-13 | Young-Su Kim | Photovoltaic device |
KR101661948B1 (ko) * | 2014-04-08 | 2016-10-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
WO2017068959A1 (ja) * | 2015-10-21 | 2017-04-27 | シャープ株式会社 | 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法 |
CN116766751B (zh) * | 2023-08-17 | 2023-10-13 | 莱阳银通纸业有限公司 | 一种低温丝网印刷装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318723A (ja) * | 1993-05-07 | 1994-11-15 | Canon Inc | 光起電力素子およびその作製方法 |
JP3724272B2 (ja) | 1999-09-16 | 2005-12-07 | トヨタ自動車株式会社 | 太陽電池 |
JP2004207493A (ja) | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 半導体装置、その製造方法および太陽電池 |
US7388147B2 (en) | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
JP2006080450A (ja) * | 2004-09-13 | 2006-03-23 | Sharp Corp | 太陽電池の製造方法 |
JP4975338B2 (ja) * | 2006-03-01 | 2012-07-11 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
CN101203384B (zh) * | 2006-06-27 | 2012-02-01 | 三菱电机株式会社 | 丝网印刷机以及太阳能电池 |
WO2008026415A1 (en) * | 2006-08-31 | 2008-03-06 | Shin-Etsu Handotai Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
JP2008186927A (ja) * | 2007-01-29 | 2008-08-14 | Sharp Corp | 裏面接合型太陽電池とその製造方法 |
JP5629210B2 (ja) * | 2007-08-31 | 2014-11-19 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 太陽電池用層状コンタクト構造 |
JP2009253096A (ja) * | 2008-04-08 | 2009-10-29 | Sharp Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール |
WO2010001473A1 (ja) * | 2008-07-03 | 2010-01-07 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
-
2009
- 2009-11-06 FR FR0957870A patent/FR2952474B1/fr not_active Expired - Fee Related
-
2010
- 2010-11-05 KR KR1020127011113A patent/KR101706804B1/ko active IP Right Grant
- 2010-11-05 US US13/504,398 patent/US20120211856A1/en not_active Abandoned
- 2010-11-05 BR BR112012010642A patent/BR112012010642A2/pt not_active IP Right Cessation
- 2010-11-05 IN IN3863DEN2012 patent/IN2012DN03863A/en unknown
- 2010-11-05 EP EP10773103.6A patent/EP2497118B1/fr active Active
- 2010-11-05 JP JP2012537403A patent/JP5964751B2/ja not_active Expired - Fee Related
- 2010-11-05 ES ES10773103.6T patent/ES2457232T3/es active Active
- 2010-11-05 CN CN201080056455.5A patent/CN102656703B/zh not_active Expired - Fee Related
- 2010-11-05 WO PCT/EP2010/066863 patent/WO2011054915A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP5964751B2 (ja) | 2016-08-03 |
WO2011054915A1 (fr) | 2011-05-12 |
US20120211856A1 (en) | 2012-08-23 |
CN102656703B (zh) | 2015-06-03 |
FR2952474A1 (fr) | 2011-05-13 |
CN102656703A (zh) | 2012-09-05 |
ES2457232T3 (es) | 2014-04-25 |
IN2012DN03863A (pt) | 2015-08-28 |
KR101706804B1 (ko) | 2017-02-14 |
FR2952474B1 (fr) | 2012-01-06 |
EP2497118B1 (fr) | 2014-01-08 |
JP2013510435A (ja) | 2013-03-21 |
EP2497118A1 (fr) | 2012-09-12 |
KR20120092120A (ko) | 2012-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |