CN102656703B - 两个高温和低温丝网印刷部分式的光伏电池导体 - Google Patents
两个高温和低温丝网印刷部分式的光伏电池导体 Download PDFInfo
- Publication number
- CN102656703B CN102656703B CN201080056455.5A CN201080056455A CN102656703B CN 102656703 B CN102656703 B CN 102656703B CN 201080056455 A CN201080056455 A CN 201080056455A CN 102656703 B CN102656703 B CN 102656703B
- Authority
- CN
- China
- Prior art keywords
- temperature
- semi
- screen printing
- silk screen
- electric conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 63
- 238000007650 screen-printing Methods 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000002002 slurry Substances 0.000 claims description 52
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 230000000284 resting effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000006255 coating slurry Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0957870A FR2952474B1 (fr) | 2009-11-06 | 2009-11-06 | Conducteur de cellule photovoltaique en deux parties serigraphiees haute et basse temperature |
| FR0957870 | 2009-11-06 | ||
| PCT/EP2010/066863 WO2011054915A1 (fr) | 2009-11-06 | 2010-11-05 | Conducteur de cellule photovoltaïque en deux parties serigraphiees haute et basse temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102656703A CN102656703A (zh) | 2012-09-05 |
| CN102656703B true CN102656703B (zh) | 2015-06-03 |
Family
ID=42226580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080056455.5A Expired - Fee Related CN102656703B (zh) | 2009-11-06 | 2010-11-05 | 两个高温和低温丝网印刷部分式的光伏电池导体 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20120211856A1 (pt) |
| EP (1) | EP2497118B1 (pt) |
| JP (1) | JP5964751B2 (pt) |
| KR (1) | KR101706804B1 (pt) |
| CN (1) | CN102656703B (pt) |
| BR (1) | BR112012010642A2 (pt) |
| ES (1) | ES2457232T3 (pt) |
| FR (1) | FR2952474B1 (pt) |
| IN (1) | IN2012DN03863A (pt) |
| WO (1) | WO2011054915A1 (pt) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2423981B1 (en) * | 2010-08-27 | 2018-11-28 | LG Electronics Inc. | Method of manufacturing solar cell electrodes by paste firing |
| US20130147003A1 (en) * | 2011-12-13 | 2013-06-13 | Young-Su Kim | Photovoltaic device |
| KR101661948B1 (ko) | 2014-04-08 | 2016-10-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| WO2017068959A1 (ja) * | 2015-10-21 | 2017-04-27 | シャープ株式会社 | 裏面電極型太陽電池セルおよび裏面電極型太陽電池セルの製造方法 |
| CN116766751B (zh) * | 2023-08-17 | 2023-10-13 | 莱阳银通纸业有限公司 | 一种低温丝网印刷装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06318723A (ja) * | 1993-05-07 | 1994-11-15 | Canon Inc | 光起電力素子およびその作製方法 |
| JP3724272B2 (ja) | 1999-09-16 | 2005-12-07 | トヨタ自動車株式会社 | 太陽電池 |
| JP2004207493A (ja) | 2002-12-25 | 2004-07-22 | Mitsubishi Electric Corp | 半導体装置、その製造方法および太陽電池 |
| US7388147B2 (en) | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| JP2006080450A (ja) * | 2004-09-13 | 2006-03-23 | Sharp Corp | 太陽電池の製造方法 |
| JP4975338B2 (ja) * | 2006-03-01 | 2012-07-11 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
| US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| CN101203384B (zh) * | 2006-06-27 | 2012-02-01 | 三菱电机株式会社 | 丝网印刷机以及太阳能电池 |
| AU2007289892B2 (en) * | 2006-08-31 | 2012-09-27 | Shin-Etsu Chemical Co., Ltd. | Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery |
| JP2008186927A (ja) * | 2007-01-29 | 2008-08-14 | Sharp Corp | 裏面接合型太陽電池とその製造方法 |
| KR101543046B1 (ko) * | 2007-08-31 | 2015-08-07 | 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 | 태양 전지용 층상 컨택 구조 |
| JP2009253096A (ja) * | 2008-04-08 | 2009-10-29 | Sharp Corp | 太陽電池セルの製造方法および太陽電池モジュールの製造方法ならびに太陽電池モジュール |
| CN102077358B (zh) * | 2008-07-03 | 2015-09-09 | 三菱电机株式会社 | 光电动势装置及其制造方法 |
-
2009
- 2009-11-06 FR FR0957870A patent/FR2952474B1/fr not_active Expired - Fee Related
-
2010
- 2010-11-05 BR BR112012010642A patent/BR112012010642A2/pt not_active IP Right Cessation
- 2010-11-05 IN IN3863DEN2012 patent/IN2012DN03863A/en unknown
- 2010-11-05 KR KR1020127011113A patent/KR101706804B1/ko active IP Right Grant
- 2010-11-05 US US13/504,398 patent/US20120211856A1/en not_active Abandoned
- 2010-11-05 WO PCT/EP2010/066863 patent/WO2011054915A1/fr active Application Filing
- 2010-11-05 EP EP10773103.6A patent/EP2497118B1/fr active Active
- 2010-11-05 ES ES10773103.6T patent/ES2457232T3/es active Active
- 2010-11-05 CN CN201080056455.5A patent/CN102656703B/zh not_active Expired - Fee Related
- 2010-11-05 JP JP2012537403A patent/JP5964751B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5964751B2 (ja) | 2016-08-03 |
| WO2011054915A1 (fr) | 2011-05-12 |
| EP2497118B1 (fr) | 2014-01-08 |
| JP2013510435A (ja) | 2013-03-21 |
| FR2952474B1 (fr) | 2012-01-06 |
| EP2497118A1 (fr) | 2012-09-12 |
| BR112012010642A2 (pt) | 2016-04-05 |
| US20120211856A1 (en) | 2012-08-23 |
| KR101706804B1 (ko) | 2017-02-14 |
| CN102656703A (zh) | 2012-09-05 |
| FR2952474A1 (fr) | 2011-05-13 |
| ES2457232T3 (es) | 2014-04-25 |
| IN2012DN03863A (pt) | 2015-08-28 |
| KR20120092120A (ko) | 2012-08-20 |
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