BR112012006066A2 - dispositivo de captação de imagem de estado sólido, e, método para fabricar o mesmo. - Google Patents

dispositivo de captação de imagem de estado sólido, e, método para fabricar o mesmo.

Info

Publication number
BR112012006066A2
BR112012006066A2 BR112012006066A BR112012006066A BR112012006066A2 BR 112012006066 A2 BR112012006066 A2 BR 112012006066A2 BR 112012006066 A BR112012006066 A BR 112012006066A BR 112012006066 A BR112012006066 A BR 112012006066A BR 112012006066 A2 BR112012006066 A2 BR 112012006066A2
Authority
BR
Brazil
Prior art keywords
semiconductor region
imaging device
solid state
state imaging
manufacturing
Prior art date
Application number
BR112012006066A
Other languages
English (en)
Other versions
BR112012006066B1 (pt
Inventor
Kobayashi Masahiro
Yamashita Yuichiro
Onuki Yusuke
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of BR112012006066A2 publication Critical patent/BR112012006066A2/pt
Publication of BR112012006066B1 publication Critical patent/BR112012006066B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

dispositivo de captação de imagem de estado sólido, e,método para fabricar o mesmo. um dispositivo de captação de imagem de estado sólido inclui uma parte de conversão fotoelétrica, uma parte de retenção de carga configurada para incluir uma primeira região semicondutora tipo primeira condutividade e uma parte de transferência, configurada para incluir um eletrodo de porta de transferência, que controla um potencial entre a parte de retenção de carga e um nó sensor. a parte de retenção de carga inclui um eletrodo de controle. uma segunda região semicondutora tipo segunda-condutividade é disposta sobre uma superfície de uma região semicondutora entre o eletrodo de controle e o eletrodo de porta de transferência. uma terceira região semicondutora tipo de primeira condutividade é disposta sob a segunda região semicondutora. a terceira região semicondutora é disposta em uma posição mais profunda do que a primeira região semicondutora.
BR112012006066-0A 2009-10-09 2010-10-06 Dispositivo de captação de imagem de estado sólido, e, método para fabricar o mesmo BR112012006066B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-235089 2009-10-09
JP2009235089A JP5717329B2 (ja) 2009-10-09 2009-10-09 固体撮像装置及びその製造方法
PCT/JP2010/005977 WO2011043067A1 (en) 2009-10-09 2010-10-06 Solid-state image pickup device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
BR112012006066A2 true BR112012006066A2 (pt) 2017-06-06
BR112012006066B1 BR112012006066B1 (pt) 2019-11-26

Family

ID=43432201

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012006066-0A BR112012006066B1 (pt) 2009-10-09 2010-10-06 Dispositivo de captação de imagem de estado sólido, e, método para fabricar o mesmo

Country Status (9)

Country Link
US (1) US8823125B2 (pt)
EP (1) EP2486589B1 (pt)
JP (1) JP5717329B2 (pt)
KR (1) KR101442358B1 (pt)
CN (1) CN102576719B (pt)
BR (1) BR112012006066B1 (pt)
MY (1) MY163484A (pt)
RU (1) RU2506662C2 (pt)
WO (1) WO2011043067A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5814625B2 (ja) 2011-05-27 2015-11-17 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
JP6159184B2 (ja) 2013-07-25 2017-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6609948B2 (ja) * 2015-03-19 2019-11-27 セイコーエプソン株式会社 固体撮像素子及びその製造方法
KR102456530B1 (ko) 2015-09-09 2022-10-20 삼성전자주식회사 이미지 센서
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
CN106129076B (zh) * 2016-07-18 2018-12-18 上海集成电路研发中心有限公司 一种用于减小暗电流的像素单元结构及其制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法
KR100192954B1 (ko) * 1996-07-18 1999-06-15 김광호 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법
JPH11274454A (ja) * 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
US20020118407A1 (en) * 2001-02-28 2002-08-29 Hiroyoshi Komobuchi Solid-state image pickup apparatus and method for driving the same
US20030055026A1 (en) 2001-04-17 2003-03-20 Dey L.P. Formoterol/steroid bronchodilating compositions and methods of use thereof
JP2005175418A (ja) * 2003-11-19 2005-06-30 Canon Inc 光電変換装置
US7214974B2 (en) 2004-06-04 2007-05-08 Samsung Electronics Co., Ltd. Image sensors for reducing dark current and methods of manufacturing the same
KR100761824B1 (ko) * 2004-06-04 2007-09-28 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP4416668B2 (ja) 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
KR100660866B1 (ko) * 2005-06-20 2006-12-26 삼성전자주식회사 이미지 센서에서 저잡음 글로벌 셔터 동작을 실현한 픽셀회로 및 방법
CN101305261B (zh) * 2005-11-14 2010-09-15 松下电工株式会社 空间信息检测装置及适用于其的光电检测器
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置
CN101118917A (zh) * 2006-07-31 2008-02-06 三洋电机株式会社 摄像装置
US7795655B2 (en) * 2006-10-04 2010-09-14 Sony Corporation Solid-state imaging device and electronic device
KR101030263B1 (ko) * 2006-11-30 2011-04-22 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 거리 측정 소자 및 고체 촬상 장치
JP2009038167A (ja) * 2007-08-01 2009-02-19 Victor Co Of Japan Ltd 固体撮像装置及びその製造方法
JP2009088020A (ja) * 2007-09-27 2009-04-23 Canon Inc 撮像装置、撮像システム、及び撮像装置の駆動方法
JP5568880B2 (ja) * 2008-04-03 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP4759590B2 (ja) * 2008-05-09 2011-08-31 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム

Also Published As

Publication number Publication date
US8823125B2 (en) 2014-09-02
US20120199934A1 (en) 2012-08-09
RU2506662C2 (ru) 2014-02-10
KR20120059641A (ko) 2012-06-08
JP2011082427A (ja) 2011-04-21
EP2486589A1 (en) 2012-08-15
RU2012118747A (ru) 2013-11-20
CN102576719A (zh) 2012-07-11
BR112012006066B1 (pt) 2019-11-26
KR101442358B1 (ko) 2014-09-17
CN102576719B (zh) 2015-08-19
JP5717329B2 (ja) 2015-05-13
EP2486589B1 (en) 2014-12-31
MY163484A (en) 2017-09-15
WO2011043067A1 (en) 2011-04-14

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 06/10/2010, OBSERVADAS AS CONDICOES LEGAIS. (CO) 20 (VINTE) ANOS CONTADOS A PARTIR DE 06/10/2010, OBSERVADAS AS CONDICOES LEGAIS

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 11A ANUIDADE.

B24J Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12)

Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2640 DE 10-08-2021 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.