BR112015029842A2 - dispositivo semicondutor não plano que tem aleta autoalinhada com camada de bloqueio de topo - Google Patents

dispositivo semicondutor não plano que tem aleta autoalinhada com camada de bloqueio de topo

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Publication number
BR112015029842A2
BR112015029842A2 BR112015029842A BR112015029842A BR112015029842A2 BR 112015029842 A2 BR112015029842 A2 BR 112015029842A2 BR 112015029842 A BR112015029842 A BR 112015029842A BR 112015029842 A BR112015029842 A BR 112015029842A BR 112015029842 A2 BR112015029842 A2 BR 112015029842A2
Authority
BR
Brazil
Prior art keywords
self
semiconductor
locking layer
fin
semiconductor fin
Prior art date
Application number
BR112015029842A
Other languages
English (en)
Other versions
BR112015029842B1 (pt
Inventor
Jan Chia-Hong
D Yeh Jeng-Ya
Park Joodong
M Hafez Walid
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of BR112015029842A2 publication Critical patent/BR112015029842A2/pt
Publication of BR112015029842B1 publication Critical patent/BR112015029842B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

resumo patente de invenção: "dispositivo semicondutor não plano que tem aleta autoalinhada com camada de bloqueio de topo". a presente invenção refere-se a dispositivos semicondutores não planos que têm aletas autoalinhadas com camadas de bloqueio de topo e métodos para fabricar dispositivos semicondutores não planos que têm aletas autoalinhadas com camadas de bloqueio de topo. por exemplo, uma estrutura semicondutora inclui uma aleta semicondutora disposta acima de um substrato semicondutor e que tem uma superfície de topo. uma camada de isolamento é disposta em cada lado da aleta semicondutora e rebaixada abaixo da superfície de topo da aleta semicondutora para fornecer uma porção protuberante da aleta semicondutora. a porção protuberante tem paredes laterais e a superfície de topo. uma camada de bloqueio de porta tem uma primeira porção disposta em pelo menos uma porção da superfície de topo da aleta semicondutora, e tem uma segunda porção disposta em pelo menos uma porção das paredes laterais da aleta semicondutora. a primeira porção da camada de bloqueio de porta é contínua com, porém, mais espessa que, a segunda porção da camada de bloqueio de porta. uma pilha de porta é disposta na primeira e na segunda porções da camada de bloqueio de porta.
BR112015029842-7A 2013-06-26 2013-06-26 Estrutura semicondutora e método para fabricar uma estrutura semicondutora BR112015029842B1 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2013/047757 WO2014209289A1 (en) 2013-06-26 2013-06-26 Non-planar semiconductor device having self-aligned fin with top blocking layer

Publications (2)

Publication Number Publication Date
BR112015029842A2 true BR112015029842A2 (pt) 2017-07-25
BR112015029842B1 BR112015029842B1 (pt) 2021-12-21

Family

ID=52142431

Family Applications (2)

Application Number Title Priority Date Filing Date
BR112015029842-7A BR112015029842B1 (pt) 2013-06-26 2013-06-26 Estrutura semicondutora e método para fabricar uma estrutura semicondutora
BR122016009112A BR122016009112A2 (pt) 2013-06-26 2013-06-26 estrutura semicondutora e método para fabricação de uma estrutura semicondutora

Family Applications After (1)

Application Number Title Priority Date Filing Date
BR122016009112A BR122016009112A2 (pt) 2013-06-26 2013-06-26 estrutura semicondutora e método para fabricação de uma estrutura semicondutora

Country Status (8)

Country Link
US (1) US9780217B2 (pt)
KR (1) KR102098893B1 (pt)
CN (1) CN105431945B (pt)
BR (2) BR112015029842B1 (pt)
DE (1) DE112013007037T5 (pt)
GB (1) GB2529589B (pt)
TW (2) TWI608621B (pt)
WO (1) WO2014209289A1 (pt)

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US9391074B1 (en) 2015-04-21 2016-07-12 International Business Machines Corporation Structure for FinFET fins
KR102400375B1 (ko) * 2015-04-30 2022-05-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN106971977B (zh) * 2016-01-13 2020-01-31 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US9691775B1 (en) * 2016-04-28 2017-06-27 Globalfoundries Inc. Combined SADP fins for semiconductor devices and methods of making the same
KR102532497B1 (ko) 2016-09-19 2023-05-17 삼성전자주식회사 반도체 소자 및 이의 제조 방법
WO2018101957A1 (en) * 2016-12-02 2018-06-07 Intel Corporation Semiconductor device having fin-end stress-inducing features
US10396075B2 (en) * 2017-05-01 2019-08-27 International Business Machines Corporation Very narrow aspect ratio trapping trench structure with smooth trench sidewalls
CN110164767B (zh) * 2018-02-12 2022-05-13 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US11302790B2 (en) 2018-02-23 2022-04-12 Intel Corporation Fin shaping using templates and integrated circuit structures resulting therefrom
US10784359B2 (en) 2018-05-18 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Non-conformal oxide liner and manufacturing methods thereof
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes

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US5895945A (en) * 1995-11-14 1999-04-20 United Microelectronics Corporation Single polysilicon neuron MOSFET
US6208549B1 (en) 2000-02-24 2001-03-27 Xilinx, Inc. One-time programmable poly-fuse circuit for implementing non-volatile functions in a standard sub 0.35 micron CMOS
JP2002237524A (ja) 2001-02-09 2002-08-23 Seiko Instruments Inc 相補型ｍｏｓ半導体装置
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
KR100634372B1 (ko) * 2004-06-04 2006-10-16 삼성전자주식회사 반도체 소자들 및 그 형성 방법들
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Also Published As

Publication number Publication date
US9780217B2 (en) 2017-10-03
KR20160050010A (ko) 2016-05-10
TW201637216A (zh) 2016-10-16
CN105431945A (zh) 2016-03-23
WO2014209289A1 (en) 2014-12-31
TW201513358A (zh) 2015-04-01
CN105431945B (zh) 2019-08-23
GB201520615D0 (en) 2016-01-06
US20160056293A1 (en) 2016-02-25
BR112015029842B1 (pt) 2021-12-21
TWI532185B (zh) 2016-05-01
KR102098893B1 (ko) 2020-04-08
BR122016009112A2 (pt) 2019-08-27
GB2529589A (en) 2016-02-24
DE112013007037T5 (de) 2016-01-21
GB2529589B (en) 2020-01-08
TWI608621B (zh) 2017-12-11

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 26/06/2013, OBSERVADAS AS CONDICOES LEGAIS.