BG106371A - Метод за производство на изпарител - Google Patents
Метод за производство на изпарителInfo
- Publication number
- BG106371A BG106371A BG106371A BG10637102A BG106371A BG 106371 A BG106371 A BG 106371A BG 106371 A BG106371 A BG 106371A BG 10637102 A BG10637102 A BG 10637102A BG 106371 A BG106371 A BG 106371A
- Authority
- BG
- Bulgaria
- Prior art keywords
- evaporation source
- producing
- pulverulent
- back plate
- target
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Laminated Bodies (AREA)
Abstract
Изобретението се отнася до метод за производство на изпарител за физично отлагане на газове. Изпарителят се състои от главен блок, както и от един или повече допълнителни компонента, има и опорна пластина, свързана с главния блок и изградена от материал с по-добра топлинна проводимост от него. Пластината е направена от прахообразен изходен материал, който се пресова заедно с компонентите на разпрашващия главен блок, след което се образуват малкипрахообразни частици помежду им, от които впоследствие се формира опорната пластина.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0085100U AT4240U1 (de) | 2000-11-20 | 2000-11-20 | Verfahren zur herstellung einer verdampfungsquelle |
Publications (2)
Publication Number | Publication Date |
---|---|
BG106371A true BG106371A (bg) | 2002-08-30 |
BG64450B1 BG64450B1 (en) | 2005-02-28 |
Family
ID=3501235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BG106371A BG64450B1 (en) | 2000-11-20 | 2002-01-31 | Method for producing an evaporation source |
Country Status (21)
Country | Link |
---|---|
US (1) | US6908588B2 (bg) |
EP (1) | EP1335995B1 (bg) |
JP (1) | JP4226900B2 (bg) |
KR (1) | KR100775140B1 (bg) |
CN (1) | CN1268780C (bg) |
AT (2) | AT4240U1 (bg) |
AU (1) | AU775031B2 (bg) |
BG (1) | BG64450B1 (bg) |
CA (1) | CA2375783C (bg) |
CZ (1) | CZ298911B6 (bg) |
DE (1) | DE50103914D1 (bg) |
DK (1) | DK1335995T3 (bg) |
ES (1) | ES2227293T3 (bg) |
HR (1) | HRP20020100B1 (bg) |
HU (1) | HU225577B1 (bg) |
MX (1) | MXPA02001478A (bg) |
MY (1) | MY128636A (bg) |
PL (1) | PL199272B1 (bg) |
RS (1) | RS49852B (bg) |
SI (1) | SI1335995T1 (bg) |
WO (1) | WO2002040735A1 (bg) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100441733C (zh) * | 2004-03-30 | 2008-12-10 | 株式会社延原表 | 蒸镀工序用喷嘴蒸发源 |
CN101052739A (zh) * | 2004-11-18 | 2007-10-10 | 霍尼韦尔国际公司 | 形成三维物理汽相沉积靶的方法 |
DE102004060423B4 (de) * | 2004-12-14 | 2016-10-27 | Heraeus Deutschland GmbH & Co. KG | Rohrtarget und dessen Verwendung |
DE102006003279B4 (de) * | 2006-01-23 | 2010-03-25 | W.C. Heraeus Gmbh | Sputtertarget mit hochschmelzender Phase |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
US8778987B2 (en) * | 2007-03-13 | 2014-07-15 | Symrise Ag | Use of 4-hydroxychalcone derivatives for masking an unpleasant taste |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
US20100140084A1 (en) * | 2008-12-09 | 2010-06-10 | Chi-Fung Lo | Method for production of aluminum containing targets |
AT12021U1 (de) * | 2010-04-14 | 2011-09-15 | Plansee Se | Beschichtungsquelle und verfahren zu deren herstellung |
EP2723915A1 (en) | 2011-06-27 | 2014-04-30 | Soleras Ltd. | Sputtering target |
US9992917B2 (en) | 2014-03-10 | 2018-06-05 | Vulcan GMS | 3-D printing method for producing tungsten-based shielding parts |
RU2696910C2 (ru) | 2014-06-27 | 2019-08-07 | Планзее Композит Материалс Гмбх | Распыляемая мишень |
AT14497U1 (de) * | 2015-01-26 | 2015-12-15 | Plansee Composite Mat Gmbh | Beschichtungsquelle |
JP6728839B2 (ja) * | 2016-03-24 | 2020-07-22 | 大同特殊鋼株式会社 | プレス成形品の製造方法およびスパッタリングターゲット材 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126451A (en) * | 1977-03-30 | 1978-11-21 | Airco, Inc. | Manufacture of plates by powder-metallurgy |
JPS60194070A (ja) | 1984-03-16 | 1985-10-02 | Tokuyama Soda Co Ltd | スパツタリングタ−ゲツト |
AT388752B (de) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung |
JPS63169307A (ja) * | 1987-01-06 | 1988-07-13 | Tokyo Tungsten Co Ltd | W又はW合金/Mo又はMo合金張り合わせ材料の製造方法 |
JPH0196068A (ja) * | 1987-10-07 | 1989-04-14 | Nippon Chemicon Corp | 窒化アルミニウム焼結体の製造方法 |
JPH0741304B2 (ja) * | 1990-03-13 | 1995-05-10 | 株式会社神戸製鋼所 | 高A1含有Ti合金の熱間押出方法 |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
JPH06128738A (ja) * | 1992-10-20 | 1994-05-10 | Mitsubishi Kasei Corp | スパッタリングターゲットの製造方法 |
US5397050A (en) * | 1993-10-27 | 1995-03-14 | Tosoh Smd, Inc. | Method of bonding tungsten titanium sputter targets to titanium plates and target assemblies produced thereby |
US5656216A (en) * | 1994-08-25 | 1997-08-12 | Sony Corporation | Method for making metal oxide sputtering targets (barrier powder envelope) |
US6073830A (en) * | 1995-04-21 | 2000-06-13 | Praxair S.T. Technology, Inc. | Sputter target/backing plate assembly and method of making same |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
US5863398A (en) | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
FR2756572B1 (fr) | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
US5963778A (en) * | 1997-02-13 | 1999-10-05 | Tosoh Smd, Inc. | Method for producing near net shape planar sputtering targets and an intermediate therefor |
JP3946298B2 (ja) * | 1997-03-25 | 2007-07-18 | 本田技研工業株式会社 | セラミックス−金属傾斜機能材およびその製造方法 |
US6010583A (en) | 1997-09-09 | 2000-01-04 | Sony Corporation | Method of making unreacted metal/aluminum sputter target |
JPH11106904A (ja) * | 1997-09-29 | 1999-04-20 | Riyouka Massey Kk | スパッタリングターゲットの製造方法 |
US6579431B1 (en) * | 1998-01-14 | 2003-06-17 | Tosoh Smd, Inc. | Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers |
JPH11200030A (ja) | 1998-01-20 | 1999-07-27 | Sumitomo Chem Co Ltd | スパッタリングターゲット用バッキングプレート |
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
US6328927B1 (en) * | 1998-12-24 | 2001-12-11 | Praxair Technology, Inc. | Method of making high-density, high-purity tungsten sputter targets |
JP2000273623A (ja) * | 1999-03-29 | 2000-10-03 | Japan Energy Corp | Ti−Al合金スパッタリングターゲット |
US6042777A (en) * | 1999-08-03 | 2000-03-28 | Sony Corporation | Manufacturing of high density intermetallic sputter targets |
-
2000
- 2000-11-20 AT AT0085100U patent/AT4240U1/de not_active IP Right Cessation
-
2001
- 2001-11-06 MY MYPI20015103A patent/MY128636A/en unknown
- 2001-11-07 PL PL355115A patent/PL199272B1/pl unknown
- 2001-11-07 EP EP01980044A patent/EP1335995B1/de not_active Expired - Lifetime
- 2001-11-07 ES ES01980044T patent/ES2227293T3/es not_active Expired - Lifetime
- 2001-11-07 RS YUP-445/02A patent/RS49852B/sr unknown
- 2001-11-07 JP JP2002543043A patent/JP4226900B2/ja not_active Expired - Lifetime
- 2001-11-07 SI SI200130263T patent/SI1335995T1/xx unknown
- 2001-11-07 AU AU11982/02A patent/AU775031B2/en not_active Ceased
- 2001-11-07 AT AT01980044T patent/ATE278050T1/de active
- 2001-11-07 HU HU0301848A patent/HU225577B1/hu not_active IP Right Cessation
- 2001-11-07 CN CNB018030033A patent/CN1268780C/zh not_active Expired - Lifetime
- 2001-11-07 WO PCT/AT2001/000349 patent/WO2002040735A1/de active IP Right Grant
- 2001-11-07 MX MXPA02001478A patent/MXPA02001478A/es active IP Right Grant
- 2001-11-07 DK DK01980044T patent/DK1335995T3/da active
- 2001-11-07 CA CA002375783A patent/CA2375783C/en not_active Expired - Fee Related
- 2001-11-07 KR KR1020027004639A patent/KR100775140B1/ko active IP Right Grant
- 2001-11-07 DE DE50103914T patent/DE50103914D1/de not_active Expired - Lifetime
- 2001-11-07 CZ CZ20020669A patent/CZ298911B6/cs not_active IP Right Cessation
-
2002
- 2002-01-31 BG BG106371A patent/BG64450B1/bg unknown
- 2002-02-01 HR HR20020100A patent/HRP20020100B1/xx not_active IP Right Cessation
- 2002-06-12 US US10/167,787 patent/US6908588B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6908588B2 (en) | 2005-06-21 |
YU44502A (sh) | 2005-03-15 |
PL199272B1 (pl) | 2008-09-30 |
HU225577B1 (en) | 2007-03-28 |
CZ298911B6 (cs) | 2008-03-12 |
HUP0301848A2 (en) | 2003-09-29 |
JP4226900B2 (ja) | 2009-02-18 |
EP1335995A1 (de) | 2003-08-20 |
CA2375783C (en) | 2007-05-08 |
HRP20020100A2 (en) | 2003-12-31 |
DK1335995T3 (da) | 2005-01-31 |
JP2004513244A (ja) | 2004-04-30 |
SI1335995T1 (en) | 2005-06-30 |
KR100775140B1 (ko) | 2007-11-12 |
BG64450B1 (en) | 2005-02-28 |
AU1198202A (en) | 2002-05-27 |
CZ2002669A3 (cs) | 2002-08-14 |
PL355115A1 (en) | 2004-04-05 |
DE50103914D1 (de) | 2004-11-04 |
HRP20020100B1 (en) | 2010-11-30 |
AT4240U1 (de) | 2001-04-25 |
RS49852B (sr) | 2008-08-07 |
MY128636A (en) | 2007-02-28 |
KR20020074145A (ko) | 2002-09-28 |
MXPA02001478A (es) | 2002-09-23 |
ATE278050T1 (de) | 2004-10-15 |
WO2002040735A1 (de) | 2002-05-23 |
ES2227293T3 (es) | 2005-04-01 |
CA2375783A1 (en) | 2002-05-20 |
US20020155016A1 (en) | 2002-10-24 |
CN1392904A (zh) | 2003-01-22 |
AU775031B2 (en) | 2004-07-15 |
CN1268780C (zh) | 2006-08-09 |
EP1335995B1 (de) | 2004-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BG106371A (bg) | Метод за производство на изпарител | |
WO2002022300A8 (en) | Method of manufacturing sputter targets with internal cooling channels | |
ID29867A (id) | Tantalum dengan kemurnian tinggi dan produk yang mengandung target sputter dari jenis yang sama | |
TWI315747B (en) | Method of forming a sputtering target assembly and assembly made therefrom | |
DE69418886D1 (de) | Kathode für Plasma-Sputtering | |
AU2003247766A1 (en) | Thermally insulating products for footwear and other apparel | |
MY133323A (en) | Process chamber components having textured internal surfaces and method of manufacture | |
AR025065A2 (es) | Metodo y disposicion para fusionar y evaporar un material solido, disposicion de revestimiento por deposicion de vapor con vacio, y disposicion parafusionar y evaporar continuamente un material solido | |
EP1329526A4 (en) | HIGH PURITY ZIRCONIUM OR HAFNIUM, THIS CONTAINING SPUTTERING TARGET AND THIN FILMS PRODUCED WITH THIS TARGET, METHOD FOR THE PRODUCTION OF HIGH PURITY ZIRCONIUM OR HAFNIUM AND PRODUCTION METHOD FOR POWDER FROM HAIR POWDER | |
TW200833856A (en) | Sputtering target structure | |
KR900018405A (ko) | 투명도전막용 스퍼터링 타게트 및 그의 제조방법 | |
IT1287564B1 (it) | Procedimento per la produzione di placche per osteosintesi a spessore variabile. | |
TW354417B (en) | A method for forming a planarized dielectric layer | |
CA2202430A1 (en) | Oxide film, laminate and methods for their production | |
WO2002061167A3 (en) | Target/backing plate assemblies | |
AU5959100A (en) | Iron-graphite composite powders and sintered articles produced therefrom | |
BR9712045A (pt) | Processo para a produ-Æo de um tecido de pano em particular para uma forma de tela de impressÆo e um pano em particular um pano para tela de impressÆo | |
KR910008161A (ko) | 크롬-질소 합금표면피막 및 그것의 응용방법 | |
TW328159B (en) | Method for making thin film Tantalum oxide & capacitor employing such layers | |
PL341946A1 (en) | Deep-frozen article of food | |
DK0924316T3 (da) | Fremgangsmåde til påföring af belægningssystemer | |
WO2002027066A3 (en) | Thermal barrier coating resistant to sintering | |
DE69621455D1 (de) | Verfahren zur herstellung von indium-zinn-oxod (ito) legierungsgegenständen | |
WO2005010953A3 (en) | Boride thin films on silicon | |
WO2002027057A3 (en) | Sputtering target and method of making same |