BE898841A - Utilisation de getter en tube ferme - Google Patents

Utilisation de getter en tube ferme

Info

Publication number
BE898841A
BE898841A BE0/212337A BE212337A BE898841A BE 898841 A BE898841 A BE 898841A BE 0/212337 A BE0/212337 A BE 0/212337A BE 212337 A BE212337 A BE 212337A BE 898841 A BE898841 A BE 898841A
Authority
BE
Belgium
Prior art keywords
getter
closed tube
quartz tube
diffusion
tube
Prior art date
Application number
BE0/212337A
Other languages
English (en)
French (fr)
Inventor
Shu Chen Li
J Desalvo
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE898841A publication Critical patent/BE898841A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00Gettering within semiconductor bodies
    • H10P36/03Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
BE0/212337A 1983-02-04 1984-02-03 Utilisation de getter en tube ferme BE898841A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46443283A 1983-02-04 1983-02-04

Publications (1)

Publication Number Publication Date
BE898841A true BE898841A (fr) 1984-08-03

Family

ID=23843930

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/212337A BE898841A (fr) 1983-02-04 1984-02-03 Utilisation de getter en tube ferme

Country Status (9)

Country Link
JP (1) JPS59147438A (enExample)
BE (1) BE898841A (enExample)
BR (1) BR8400503A (enExample)
CA (1) CA1207089A (enExample)
DE (1) DE3403108A1 (enExample)
FR (1) FR2540672B1 (enExample)
GB (1) GB2134711B (enExample)
IE (1) IE55119B1 (enExample)
IN (1) IN159497B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005058713B4 (de) 2005-12-08 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL285088A (enExample) * 1961-11-18
DE2758576C2 (de) * 1977-12-29 1986-04-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall
JPS56169324A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Diffusion of impurity

Also Published As

Publication number Publication date
BR8400503A (pt) 1984-09-11
IE55119B1 (en) 1990-06-06
CA1207089A (en) 1986-07-02
FR2540672A1 (fr) 1984-08-10
FR2540672B1 (fr) 1986-05-30
GB2134711A (en) 1984-08-15
IE840100L (en) 1984-08-04
DE3403108A1 (de) 1984-08-09
IN159497B (enExample) 1987-05-23
GB8402533D0 (en) 1984-03-07
JPS59147438A (ja) 1984-08-23
GB2134711B (en) 1987-04-23

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19880228