IE55119B1 - Closed tube gettering - Google Patents
Closed tube getteringInfo
- Publication number
- IE55119B1 IE55119B1 IE10084A IE10084A IE55119B1 IE 55119 B1 IE55119 B1 IE 55119B1 IE 10084 A IE10084 A IE 10084A IE 10084 A IE10084 A IE 10084A IE 55119 B1 IE55119 B1 IE 55119B1
- Authority
- IE
- Ireland
- Prior art keywords
- tube
- process according
- wafers
- gettering
- diffusion
- Prior art date
Links
- 238000005247 gettering Methods 0.000 title claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims description 2
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 5
- 150000001805 chlorine compounds Chemical class 0.000 abstract description 4
- 229960001701 chloroform Drugs 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910011255 B2O3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229940125797 compound 12 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
In a closed tube diffusion process a source (12) of a gettering agent comprising a non-metallic chlorine compound is disposed within a sealed quartz tube (10) together with a source (14) of a suitable doping agent and wafers (20) of a semiconductor material which are to be doped. The quartz tube (10) is then disposed within a diffusion furnace and the gettering of impurities is carried out during the diffusion. The gettering source (12) may comprise a sealed quartz capillary tube which cracks to allow the gettering compound to contact the wafers when the tube (10) is placed in the furnace. <IMAGE>
[GB2134711A]
Description
S i 1 9
The present invention relates generally to power semiconductors and more specifically to processes for making, power semiconductor devices as for example, transistors, rectifiers and thyristors.
It is well known to use hydrogen chloride, trichloroethylene and trichloroethane for lifetime gettering during open tube diffusion. The gettering agent, in the form of a gas, is passed through the open diffusion tube after the final diffusion.
It is the principal object of the present invention to reduce contamination of the semiconductor.
The invention resides broadly in a process for producing high power semiconductor devices by gettering impurities during closed tube diffusion of wafers of semiconductor 15 material which comprises disposing in a tube wafers of a semiconductor material, a source of doping material and a non-metallic chlorine gettering compound, forming a vacuum in said tube and after sealing the latter disposing the tube in a diffusion furnace at a predetermined temperature 20 for a predetermined time, removing the tube from the furnace and removing the wafers from said tube.
-3- -3- 55119
For a better understanding of the nature of the present invention, reference should be had to the following detailed description and drawings of which;
Figs. 1 and 2 are side views of a quartz tube load with wafers, dopant and gettering agent in accordance with the teachings of this invention.
With reference to Fig. 1, there is shown a quartz tube 10 of the type commonly used in carrying out closed tube diffusion of wafers of a semiconductor material.
The quartz tube 10 normally will have a volume of one or two liters.
From 0.05 cc. to 0,5 cc. of a non-metallic chlorine compound 12, which will serve as a gettering agent, is disposed within the quartz tube 10. If the non-metallic compound is in the form of a fluid, a liquid or a gas it is enclosed within a sealed quartz capillary. If the non-metallic chlorine compound is in the form of a solid, it need not be enclosed within any type of container.
Examples of suitable non-metallic chlorine compounds that may be used in practicing the teachings of this invention include, but are not limited to hydrogen chloride (concentrated), trichloroethylene, trichloroethane, methylene chloride, carbon tetrachloride and trichloro- -4- -4- 5S119 methane (chloroform).
Particularly good results have been realized using trichloromethane.
The quantity of gettering agent employed depends on the 5 volume of the quartz tube 10 and the number and size of wafers of a semiconductor material which are to be diffused within the tube 10. For example, 0.1 to 0.3 qc. of-trichloromethane is used in a one Titer quartz tube when 200 wafers of two-inch diameter are to be diffused.
A suitable diffusion source 14 is then disposed in the quartz tube 10. The diffusion source may be in the formL of a doping metal or a doping metal compound. The metal should have a purity of from 99.9999 to 99.99999¾. by weight. The metal if used would be a metal selected 15 from the group consisting of gallium, aluminum or boron.
An example of a compound suitable for use as a doping agent would be boric oxide BgOg. In addition, the doping compound could be silicon powder and a doping agent. This latter doping compound is set forth in U.S. Patent 4,317,680 20 The quantity of doping compound employed is dependent on the material to be doped and the doping concentration desired. The calculation of the quantity of doping material used is well known to those skilled in the art.
- 5 S119 A graphite boat 16 containing a quantity of wafers 20 of a semiconductor material, preferably silicon is then disposed in the quartz tube 10.
A quartz tube having a volume of two-liters usually easily 5 hold 200 wafers.
The relative position of the gettering agent 12, the doping material 14 and the graphite boat 16 containing the wafers 20 within the quartz tube 10 is not important.
The gettering agent and the doping material may be contained 10 in the same capillary tube.
The quartz tube 10 is then sealed by glass soldering a plug 22 into open end 24.
The quartz tube 10 is then pumped to a vacuum of from 1 to 10*® torr through aperture 26 and then back filled with 15 an inert gas as for example helium or argon and the aperture 26 is sealed off.
The amount of inert gas used in the back filling depends upon the temperature at which the diffusion is to be carried out.
-6-.
-6-. 55119
With reference to Fig. 2, if the wafers 20 are disposed in a silicon liner 30, it.is not necessary to back fill the quartz tube 10 with an inert jas after pumping down to a vacuum.
The quartz tube 10 is then disposed in a diffusion furnace to effect the diffusion.
The time of diffusion and the diffusion temperature are, as is well known in the art, dependent on the desired device design and the starting material.
Two hundred, two inch diameter, n-type silicon wafers of 220+10¾ ohm-cm resistivity were disposed in a two liter quartz tubes together with 0.3 cc. trichloromethane, and a quantity of 99.99999%, by weight pure aluminum metaT. The quartz tube was evacuated to a vacuum of 10"® torr 15 and back filled to a pressure of 150 mra, Hg with argon. The tube was then heated in a diffusion furnace for 34 hours at V250°C. Each of the wafers had a p-type region formed therein with a junction depth of 100 microns and a surface concentration of 1-3x10^® atoms/cc.
When the quartz tube 10 is inserted in the diffusion furnace, the quartz capillary containing the gettering agent cracks from the heat freeing the gettering agent.
-7- -7- 55119
Following the diffusion, the wafers are removed from the quartz tube 10 and etched with an etchant consisting of, for example, by volume, 7 parts nitric acid, 1 part hydrofluoric acid and 1 part acetic acid.
The waste product from the etch and residue from the quartz tube 10 show the following impurities to be present copper, iron, magnesium, silver, nickel and platinum in amounts ranging from 1 to 100 ppm. It is believed these impurities were originally present on 10 the surface of the quartz tube, on the surface of the wafers, in the air and in the inert gas.
Normally, in prior art practices, the gettering operation would be carried out after the next diffusion, as for example, after the open tube diffusion of an n-type dopant 15 to form a transistor or thyristor and the impurities which have been removed by following the teachings of this invention would have already have contaminated the silicon wafers.
Claims (14)
1. A process for producing high power semiconductor devices by gettering impurities during closed tube diffusion of wafers of semiconductor material which comprises disposing in a tube wafers of a semiconductor material, a source of doping material and a non-metal lie chlorine gettering compound, forming a vacuum in said tube and after sealing the latter disposing the tube in a diffusion furnace at a predetermined temperature for a predetermined time, removing the tube from the furnace and removing the wafers from said tube.
2. A process according to claim 1, wherein after disposing the wafer of semiconductor material, the source of doping material and the gettering compound in the tube, one end of said tube is sealed.
3. A process according to claim 2, wherein after the tube is sealed at one end, the tube is pumped to a vaccum through an aperture in the other end of said tube and said aperture is sealed off.
4. A process according to claim 1,-2 or 3, wherein the gettering compound is a fluid and is enclosed within a sealed capillary tube. -9- 55119
5. A process according to claim 4, wherein the gettering compound is hydrogen chloride, trichloroethylene, trichloroethane, methyl chloride, chloroform or carbon tetrachloride. 5
6. A process according to claim 4 or 5, wherein the capillary tube is composed of quartz.
7. A process according to claim 4, 5 or 6, wherein the source of doping material is also included in the capillary tube. 10
8. A process according to claim 3, wherein after pumping to a vacuum the tube is back filled with an inert gas before sealing off the aperture.
9. A process according to claim 7, wherein the inert gas is helium or argon. 15
10. A process according to any of claims 1 to 7, wherein the wafers of semiconductor material are disposed within a silicon liner.
11. A process according to any of the preceding claims, wherein the wafers are etched after removal from the tube. 20
12. A process according to any of the preceding claims, wherein the tube is composed of quartz. -10- -10- 55119
13. , A process for producing high power semiconductor devices by gettering impurities during closed diffusion of wafers of semiconductor material and substantially as described herein with particular reference to Fig. 1 or Fig. 2 of the accompanying drawings.
14. A high power semiconductor device whenever prepared by a process as claimed in any preceding claim. DATED THIS 8TH DAY OF JANUARY 1984 CRUICKSHANK AND COMPANY Agents for the Applicants 1 Holies Street Dublin 2
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46443283A | 1983-02-04 | 1983-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE840100L IE840100L (en) | 1984-08-04 |
| IE55119B1 true IE55119B1 (en) | 1990-06-06 |
Family
ID=23843930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE10084A IE55119B1 (en) | 1983-02-04 | 1984-01-18 | Closed tube gettering |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS59147438A (en) |
| BE (1) | BE898841A (en) |
| BR (1) | BR8400503A (en) |
| CA (1) | CA1207089A (en) |
| DE (1) | DE3403108A1 (en) |
| FR (1) | FR2540672B1 (en) |
| GB (1) | GB2134711B (en) |
| IE (1) | IE55119B1 (en) |
| IN (1) | IN159497B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005058713B4 (en) | 2005-12-08 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for cleaning the volume of substrates, substrate and use of the method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL287407A (en) * | 1961-11-18 | |||
| DE2758576C2 (en) * | 1977-12-29 | 1986-04-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Process for reducing the content of heavy metal which got into the doped semiconductor wafer during the production of silicon semiconductor components |
| JPS56169324A (en) * | 1980-05-30 | 1981-12-26 | Nec Home Electronics Ltd | Diffusion of impurity |
-
1984
- 1984-01-18 IE IE10084A patent/IE55119B1/en unknown
- 1984-01-18 IN IN39/CAL/84A patent/IN159497B/en unknown
- 1984-01-30 DE DE19843403108 patent/DE3403108A1/en not_active Withdrawn
- 1984-01-31 GB GB08402533A patent/GB2134711B/en not_active Expired
- 1984-02-01 FR FR8401565A patent/FR2540672B1/en not_active Expired
- 1984-02-02 JP JP1930284A patent/JPS59147438A/en active Pending
- 1984-02-02 CA CA000446628A patent/CA1207089A/en not_active Expired
- 1984-02-03 BE BE0/212337A patent/BE898841A/en not_active IP Right Cessation
- 1984-02-06 BR BR8400503A patent/BR8400503A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59147438A (en) | 1984-08-23 |
| IN159497B (en) | 1987-05-23 |
| GB2134711B (en) | 1987-04-23 |
| GB8402533D0 (en) | 1984-03-07 |
| GB2134711A (en) | 1984-08-15 |
| FR2540672B1 (en) | 1986-05-30 |
| FR2540672A1 (en) | 1984-08-10 |
| CA1207089A (en) | 1986-07-02 |
| DE3403108A1 (en) | 1984-08-09 |
| BE898841A (en) | 1984-08-03 |
| BR8400503A (en) | 1984-09-11 |
| IE840100L (en) | 1984-08-04 |
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