JPS57194581A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57194581A
JPS57194581A JP56079202A JP7920281A JPS57194581A JP S57194581 A JPS57194581 A JP S57194581A JP 56079202 A JP56079202 A JP 56079202A JP 7920281 A JP7920281 A JP 7920281A JP S57194581 A JPS57194581 A JP S57194581A
Authority
JP
Japan
Prior art keywords
region
defects
wafer
inner region
lsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079202A
Other languages
Japanese (ja)
Inventor
Masatake Kishino
Akira Yoshinaka
Takaaki Aoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56079202A priority Critical patent/JPS57194581A/en
Publication of JPS57194581A publication Critical patent/JPS57194581A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To settle the various problems of the dispersion of the element characteristics arising from the high integration of LSI by a method wherein the life times of the substrate surface region and the deep inner region are differentiated. CONSTITUTION:The substrate wafer 1 comprising the CZ wafer containing oxygen is heattreated to generate the grid defects 6 in high density in the inner region 3 of said substrate wafer only excluding said defects 6 in the region 4 near the surface and the region 5 near the backside. Said defects can absorb the detrimental impurities penetrating into the inner region from the outside during the heattreatment of LSI and perform the getter operation to said region 4 near the wafer surface. Consequently there are no defects in said region 4 subject to the low concentration of the detrimental impurities. Through these procedures, the latch up may be prevented and the strength of the alpha resistant beam may be improved by means of utilizing the wafer where the region 4 with long lifetime without the defects is provided near the surface while the region 3 with short lifetime with the defects in high density is provided in the inner region as the starting material.
JP56079202A 1981-05-27 1981-05-27 Semiconductor device Pending JPS57194581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079202A JPS57194581A (en) 1981-05-27 1981-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079202A JPS57194581A (en) 1981-05-27 1981-05-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57194581A true JPS57194581A (en) 1982-11-30

Family

ID=13683362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079202A Pending JPS57194581A (en) 1981-05-27 1981-05-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57194581A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182559A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6015963A (en) * 1983-07-06 1985-01-26 Toshiba Corp Metal oxide semiconductor type integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182559A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6015963A (en) * 1983-07-06 1985-01-26 Toshiba Corp Metal oxide semiconductor type integrated circuit

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