JPS59147438A - 電力用半導体装置の製造方法 - Google Patents

電力用半導体装置の製造方法

Info

Publication number
JPS59147438A
JPS59147438A JP59019302A JP1930284A JPS59147438A JP S59147438 A JPS59147438 A JP S59147438A JP 59019302 A JP59019302 A JP 59019302A JP 1930284 A JP1930284 A JP 1930284A JP S59147438 A JPS59147438 A JP S59147438A
Authority
JP
Japan
Prior art keywords
tube
wafer
compound
gettering
item
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59019302A
Other languages
English (en)
Japanese (ja)
Inventor
リー・シユ・チエン
ジヨセフ・デサルボ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS59147438A publication Critical patent/JPS59147438A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP59019302A 1983-02-04 1984-02-02 電力用半導体装置の製造方法 Pending JPS59147438A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46443283A 1983-02-04 1983-02-04

Publications (1)

Publication Number Publication Date
JPS59147438A true JPS59147438A (ja) 1984-08-23

Family

ID=23843930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59019302A Pending JPS59147438A (ja) 1983-02-04 1984-02-02 電力用半導体装置の製造方法

Country Status (9)

Country Link
JP (1) JPS59147438A (enExample)
BE (1) BE898841A (enExample)
BR (1) BR8400503A (enExample)
CA (1) CA1207089A (enExample)
DE (1) DE3403108A1 (enExample)
FR (1) FR2540672B1 (enExample)
GB (1) GB2134711B (enExample)
IE (1) IE55119B1 (enExample)
IN (1) IN159497B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8569175B2 (en) 2005-12-08 2013-10-29 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for dry chemical treatment of substrates and also use thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287407A (enExample) * 1961-11-18
DE2758576C2 (de) * 1977-12-29 1986-04-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall
JPS56169324A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Diffusion of impurity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8569175B2 (en) 2005-12-08 2013-10-29 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method for dry chemical treatment of substrates and also use thereof

Also Published As

Publication number Publication date
CA1207089A (en) 1986-07-02
IN159497B (enExample) 1987-05-23
GB2134711A (en) 1984-08-15
GB8402533D0 (en) 1984-03-07
GB2134711B (en) 1987-04-23
FR2540672A1 (fr) 1984-08-10
FR2540672B1 (fr) 1986-05-30
DE3403108A1 (de) 1984-08-09
IE840100L (en) 1984-08-04
BR8400503A (pt) 1984-09-11
IE55119B1 (en) 1990-06-06
BE898841A (fr) 1984-08-03

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