GB2134711B - Closed tube gettering - Google Patents

Closed tube gettering

Info

Publication number
GB2134711B
GB2134711B GB08402533A GB8402533A GB2134711B GB 2134711 B GB2134711 B GB 2134711B GB 08402533 A GB08402533 A GB 08402533A GB 8402533 A GB8402533 A GB 8402533A GB 2134711 B GB2134711 B GB 2134711B
Authority
GB
United Kingdom
Prior art keywords
gettering
closed tube
tube
closed
tube gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08402533A
Other languages
English (en)
Other versions
GB2134711A (en
GB8402533D0 (en
Inventor
Li Shu Chen
Joseph Desalvo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB8402533D0 publication Critical patent/GB8402533D0/en
Publication of GB2134711A publication Critical patent/GB2134711A/en
Application granted granted Critical
Publication of GB2134711B publication Critical patent/GB2134711B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
GB08402533A 1983-02-04 1984-01-31 Closed tube gettering Expired GB2134711B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46443283A 1983-02-04 1983-02-04

Publications (3)

Publication Number Publication Date
GB8402533D0 GB8402533D0 (en) 1984-03-07
GB2134711A GB2134711A (en) 1984-08-15
GB2134711B true GB2134711B (en) 1987-04-23

Family

ID=23843930

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08402533A Expired GB2134711B (en) 1983-02-04 1984-01-31 Closed tube gettering

Country Status (9)

Country Link
JP (1) JPS59147438A (enExample)
BE (1) BE898841A (enExample)
BR (1) BR8400503A (enExample)
CA (1) CA1207089A (enExample)
DE (1) DE3403108A1 (enExample)
FR (1) FR2540672B1 (enExample)
GB (1) GB2134711B (enExample)
IE (1) IE55119B1 (enExample)
IN (1) IN159497B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005058713B4 (de) * 2005-12-08 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287407A (enExample) * 1961-11-18
DE2758576C2 (de) * 1977-12-29 1986-04-03 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall
JPS56169324A (en) * 1980-05-30 1981-12-26 Nec Home Electronics Ltd Diffusion of impurity

Also Published As

Publication number Publication date
CA1207089A (en) 1986-07-02
IN159497B (enExample) 1987-05-23
GB2134711A (en) 1984-08-15
GB8402533D0 (en) 1984-03-07
FR2540672A1 (fr) 1984-08-10
FR2540672B1 (fr) 1986-05-30
DE3403108A1 (de) 1984-08-09
IE840100L (en) 1984-08-04
BR8400503A (pt) 1984-09-11
IE55119B1 (en) 1990-06-06
BE898841A (fr) 1984-08-03
JPS59147438A (ja) 1984-08-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee