BE898841A - Utilisation de getter en tube ferme - Google Patents
Utilisation de getter en tube fermeInfo
- Publication number
- BE898841A BE898841A BE0/212337A BE212337A BE898841A BE 898841 A BE898841 A BE 898841A BE 0/212337 A BE0/212337 A BE 0/212337A BE 212337 A BE212337 A BE 212337A BE 898841 A BE898841 A BE 898841A
- Authority
- BE
- Belgium
- Prior art keywords
- getter
- closed tube
- quartz tube
- diffusion
- tube
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 150000001805 chlorine compounds Chemical class 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46443283A | 1983-02-04 | 1983-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE898841A true BE898841A (fr) | 1984-08-03 |
Family
ID=23843930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/212337A BE898841A (fr) | 1983-02-04 | 1984-02-03 | Utilisation de getter en tube ferme |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS59147438A (enrdf_load_html_response) |
| BE (1) | BE898841A (enrdf_load_html_response) |
| BR (1) | BR8400503A (enrdf_load_html_response) |
| CA (1) | CA1207089A (enrdf_load_html_response) |
| DE (1) | DE3403108A1 (enrdf_load_html_response) |
| FR (1) | FR2540672B1 (enrdf_load_html_response) |
| GB (1) | GB2134711B (enrdf_load_html_response) |
| IE (1) | IE55119B1 (enrdf_load_html_response) |
| IN (1) | IN159497B (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005058713B4 (de) * | 2005-12-08 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Reinigung des Volumens von Substraten, Substrat sowie Verwendung des Verfahrens |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL285088A (enrdf_load_html_response) * | 1961-11-18 | |||
| DE2758576C2 (de) * | 1977-12-29 | 1986-04-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Vermindern des Gehalts an bei der Herstellung von Silicium-Halbleiterbauelementen in das dotierte Halbleiterplättchen gelangtem Schwermetall |
| JPS56169324A (en) * | 1980-05-30 | 1981-12-26 | Nec Home Electronics Ltd | Diffusion of impurity |
-
1984
- 1984-01-18 IN IN39/CAL/84A patent/IN159497B/en unknown
- 1984-01-18 IE IE10084A patent/IE55119B1/en unknown
- 1984-01-30 DE DE19843403108 patent/DE3403108A1/de not_active Withdrawn
- 1984-01-31 GB GB08402533A patent/GB2134711B/en not_active Expired
- 1984-02-01 FR FR8401565A patent/FR2540672B1/fr not_active Expired
- 1984-02-02 JP JP59019302A patent/JPS59147438A/ja active Pending
- 1984-02-02 CA CA000446628A patent/CA1207089A/en not_active Expired
- 1984-02-03 BE BE0/212337A patent/BE898841A/fr not_active IP Right Cessation
- 1984-02-06 BR BR8400503A patent/BR8400503A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2134711A (en) | 1984-08-15 |
| GB2134711B (en) | 1987-04-23 |
| BR8400503A (pt) | 1984-09-11 |
| JPS59147438A (ja) | 1984-08-23 |
| FR2540672A1 (fr) | 1984-08-10 |
| IE840100L (en) | 1984-08-04 |
| FR2540672B1 (fr) | 1986-05-30 |
| IN159497B (enrdf_load_html_response) | 1987-05-23 |
| DE3403108A1 (de) | 1984-08-09 |
| GB8402533D0 (en) | 1984-03-07 |
| CA1207089A (en) | 1986-07-02 |
| IE55119B1 (en) | 1990-06-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: WESTINGHOUSE ELECTRIC CORP. Effective date: 19880228 |