BE832890A - Dispositif a semi-conducteur - Google Patents

Dispositif a semi-conducteur

Info

Publication number
BE832890A
BE832890A BE159584A BE159584A BE832890A BE 832890 A BE832890 A BE 832890A BE 159584 A BE159584 A BE 159584A BE 159584 A BE159584 A BE 159584A BE 832890 A BE832890 A BE 832890A
Authority
BE
Belgium
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
BE159584A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE832890A publication Critical patent/BE832890A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
BE159584A 1974-09-03 1975-08-29 Dispositif a semi-conducteur BE832890A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/502,451 US3965279A (en) 1974-09-03 1974-09-03 Ohmic contacts for group III-V n-type semiconductors

Publications (1)

Publication Number Publication Date
BE832890A true BE832890A (fr) 1975-12-16

Family

ID=23997889

Family Applications (1)

Application Number Title Priority Date Filing Date
BE159584A BE832890A (fr) 1974-09-03 1975-08-29 Dispositif a semi-conducteur

Country Status (9)

Country Link
US (1) US3965279A (xx)
JP (1) JPS6016096B2 (xx)
BE (1) BE832890A (xx)
CA (1) CA1022690A (xx)
DE (1) DE2538600C2 (xx)
FR (1) FR2284191A1 (xx)
GB (1) GB1514795A (xx)
IT (1) IT1047152B (xx)
NL (1) NL7510327A (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2550512A1 (de) * 1975-11-11 1977-05-12 Bosch Gmbh Robert Verfahren zur herstellung einer metallisierung auf einem substrat
JPS5928376A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd 半導体装置およびその製造方法
JPS59186379A (ja) * 1983-04-07 1984-10-23 Nec Corp 化合物半導体装置の製造方法
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
US4766093A (en) * 1984-07-30 1988-08-23 International Business Machines Corp. Chemically formed self-aligned structure and wave guide
JP2893723B2 (ja) * 1988-06-13 1999-05-24 住友電気工業株式会社 オーミック電極の製造方法
JPH03167877A (ja) * 1989-11-28 1991-07-19 Sumitomo Electric Ind Ltd ｎ型立方晶窒化硼素のオーム性電極及びその形成方法
US6555457B1 (en) 2000-04-07 2003-04-29 Triquint Technology Holding Co. Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
US6955978B1 (en) * 2001-12-20 2005-10-18 Fairchild Semiconductor Corporation Uniform contact
TWI291232B (en) * 2006-01-03 2007-12-11 Univ Nat Chiao Tung Copper metalized ohmic contact electrode of compound semiconductor device
US20100012175A1 (en) 2008-07-16 2010-01-21 Emcore Solar Power, Inc. Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells
US20100116329A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A Methods of forming high-efficiency solar cell structures
US20110132445A1 (en) * 2009-05-29 2011-06-09 Pitera Arthur J High-efficiency multi-junction solar cell structures
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL294675A (xx) * 1962-06-29
US3239376A (en) * 1962-06-29 1966-03-08 Bell Telephone Labor Inc Electrodes to semiconductor wafers
US3371255A (en) * 1965-06-09 1968-02-27 Texas Instruments Inc Gallium arsenide semiconductor device and contact alloy therefor
US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US3686539A (en) * 1970-05-04 1972-08-22 Rca Corp Gallium arsenide semiconductor device with improved ohmic electrode
US3684930A (en) * 1970-12-28 1972-08-15 Gen Electric Ohmic contact for group iii-v p-types semiconductors
US3728785A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices
US3890699A (en) * 1974-06-04 1975-06-24 Us Army Method of making an ohmic contact to a semiconductor material

Also Published As

Publication number Publication date
JPS6016096B2 (ja) 1985-04-23
GB1514795A (en) 1978-06-21
DE2538600C2 (de) 1984-09-13
JPS5150665A (en) 1976-05-04
CA1022690A (en) 1977-12-13
FR2284191B1 (xx) 1978-03-17
IT1047152B (it) 1980-09-10
FR2284191A1 (fr) 1976-04-02
DE2538600A1 (de) 1976-03-11
US3965279A (en) 1976-06-22
NL7510327A (nl) 1976-03-05

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