FR2286510A1 - Dispositif semi-conducteur a heterostructure double - Google Patents

Dispositif semi-conducteur a heterostructure double

Info

Publication number
FR2286510A1
FR2286510A1 FR7529375A FR7529375A FR2286510A1 FR 2286510 A1 FR2286510 A1 FR 2286510A1 FR 7529375 A FR7529375 A FR 7529375A FR 7529375 A FR7529375 A FR 7529375A FR 2286510 A1 FR2286510 A1 FR 2286510A1
Authority
FR
France
Prior art keywords
semiconductor device
double heterostructure
heterostructure semiconductor
double
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7529375A
Other languages
English (en)
Inventor
Paul Anthony Kirkby
Anthony Kirkby Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of FR2286510A1 publication Critical patent/FR2286510A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
FR7529375A 1974-09-26 1975-09-25 Dispositif semi-conducteur a heterostructure double Withdrawn FR2286510A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB41896/74A GB1508799A (en) 1974-09-26 1974-09-26 Light emissive semiconductor device

Publications (1)

Publication Number Publication Date
FR2286510A1 true FR2286510A1 (fr) 1976-04-23

Family

ID=10421859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7529375A Withdrawn FR2286510A1 (fr) 1974-09-26 1975-09-25 Dispositif semi-conducteur a heterostructure double

Country Status (8)

Country Link
US (1) US4047123A (fr)
JP (1) JPS5160487A (fr)
CA (1) CA1042536A (fr)
DE (1) DE2542603A1 (fr)
FR (1) FR2286510A1 (fr)
GB (1) GB1508799A (fr)
IT (1) IT1042767B (fr)
NL (1) NL7510967A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141187A (en) * 1976-05-20 1977-11-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and its liquid phase epitaxial crystal growth method
US4323911A (en) * 1978-12-14 1982-04-06 Bell Telephone Laboratories, Incorporated Demultiplexing photodetectors
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
SE423752B (sv) * 1980-09-29 1982-05-24 Asea Ab Optiskt sensorelement
US4482906A (en) * 1982-06-30 1984-11-13 International Business Machines Corporation Gallium aluminum arsenide integrated circuit structure using germanium
WO2009079777A1 (fr) * 2007-12-21 2009-07-02 The University Of British Columbia Matériau semi-conducteur à l'arséniure de gallium incorporant du bismuth et procédé de croissance épitaxiale
JPWO2015137374A1 (ja) * 2014-03-11 2017-04-06 古河電気工業株式会社 半導体レーザ素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices

Also Published As

Publication number Publication date
NL7510967A (nl) 1976-03-30
US4047123A (en) 1977-09-06
GB1508799A (en) 1978-04-26
JPS5160487A (fr) 1976-05-26
IT1042767B (it) 1980-01-30
CA1042536A (fr) 1978-11-14
DE2542603A1 (de) 1976-04-22

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Legal Events

Date Code Title Description
ST Notification of lapse