IT1042767B - Dispositivo a semiconduttore emettitore di luce - Google Patents
Dispositivo a semiconduttore emettitore di luceInfo
- Publication number
- IT1042767B IT1042767B IT27520/75A IT2752075A IT1042767B IT 1042767 B IT1042767 B IT 1042767B IT 27520/75 A IT27520/75 A IT 27520/75A IT 2752075 A IT2752075 A IT 2752075A IT 1042767 B IT1042767 B IT 1042767B
- Authority
- IT
- Italy
- Prior art keywords
- light
- semiconductor device
- emitting semiconductor
- emitting
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB41896/74A GB1508799A (en) | 1974-09-26 | 1974-09-26 | Light emissive semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1042767B true IT1042767B (it) | 1980-01-30 |
Family
ID=10421859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT27520/75A IT1042767B (it) | 1974-09-26 | 1975-09-23 | Dispositivo a semiconduttore emettitore di luce |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4047123A (it) |
| JP (1) | JPS5160487A (it) |
| CA (1) | CA1042536A (it) |
| DE (1) | DE2542603A1 (it) |
| FR (1) | FR2286510A1 (it) |
| GB (1) | GB1508799A (it) |
| IT (1) | IT1042767B (it) |
| NL (1) | NL7510967A (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52141187A (en) * | 1976-05-20 | 1977-11-25 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser and its liquid phase epitaxial crystal growth method |
| US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
| US4323911A (en) * | 1978-12-14 | 1982-04-06 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetectors |
| SE423752B (sv) * | 1980-09-29 | 1982-05-24 | Asea Ab | Optiskt sensorelement |
| US4482906A (en) * | 1982-06-30 | 1984-11-13 | International Business Machines Corporation | Gallium aluminum arsenide integrated circuit structure using germanium |
| WO2009079777A1 (en) * | 2007-12-21 | 2009-07-02 | The University Of British Columbia | Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth |
| WO2015137374A1 (ja) * | 2014-03-11 | 2015-09-17 | 古河電気工業株式会社 | 半導体レーザ素子 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
-
1974
- 1974-09-26 GB GB41896/74A patent/GB1508799A/en not_active Expired
-
1975
- 1975-09-18 NL NL7510967A patent/NL7510967A/xx not_active Application Discontinuation
- 1975-09-22 US US05/615,320 patent/US4047123A/en not_active Expired - Lifetime
- 1975-09-23 IT IT27520/75A patent/IT1042767B/it active
- 1975-09-24 DE DE19752542603 patent/DE2542603A1/de not_active Withdrawn
- 1975-09-24 CA CA236,260A patent/CA1042536A/en not_active Expired
- 1975-09-25 FR FR7529375A patent/FR2286510A1/fr not_active Withdrawn
- 1975-09-26 JP JP11569075A patent/JPS5160487A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2286510A1 (fr) | 1976-04-23 |
| JPS5160487A (it) | 1976-05-26 |
| GB1508799A (en) | 1978-04-26 |
| CA1042536A (en) | 1978-11-14 |
| US4047123A (en) | 1977-09-06 |
| DE2542603A1 (de) | 1976-04-22 |
| NL7510967A (nl) | 1976-03-30 |
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