IT1047152B - Dispositivo semiconduttore e procedimento per la sua fabbricazione - Google Patents
Dispositivo semiconduttore e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1047152B IT1047152B IT69178/75A IT6917875A IT1047152B IT 1047152 B IT1047152 B IT 1047152B IT 69178/75 A IT69178/75 A IT 69178/75A IT 6917875 A IT6917875 A IT 6917875A IT 1047152 B IT1047152 B IT 1047152B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacture
- semiconductive device
- semiconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
- H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/502,451 US3965279A (en) | 1974-09-03 | 1974-09-03 | Ohmic contacts for group III-V n-type semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1047152B true IT1047152B (it) | 1980-09-10 |
Family
ID=23997889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT69178/75A IT1047152B (it) | 1974-09-03 | 1975-09-01 | Dispositivo semiconduttore e procedimento per la sua fabbricazione |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3965279A (it) |
| JP (1) | JPS6016096B2 (it) |
| BE (1) | BE832890A (it) |
| CA (1) | CA1022690A (it) |
| DE (1) | DE2538600C2 (it) |
| FR (1) | FR2284191A1 (it) |
| GB (1) | GB1514795A (it) |
| IT (1) | IT1047152B (it) |
| NL (1) | NL7510327A (it) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2550512A1 (de) * | 1975-11-11 | 1977-05-12 | Bosch Gmbh Robert | Verfahren zur herstellung einer metallisierung auf einem substrat |
| JPS5928376A (ja) * | 1982-08-09 | 1984-02-15 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JPS59186379A (ja) * | 1983-04-07 | 1984-10-23 | Nec Corp | 化合物半導体装置の製造方法 |
| AU576594B2 (en) * | 1984-06-15 | 1988-09-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
| US4529619A (en) * | 1984-07-16 | 1985-07-16 | Xerox Corporation | Ohmic contacts for hydrogenated amorphous silicon |
| US4766093A (en) * | 1984-07-30 | 1988-08-23 | International Business Machines Corp. | Chemically formed self-aligned structure and wave guide |
| JP2893723B2 (ja) * | 1988-06-13 | 1999-05-24 | 住友電気工業株式会社 | オーミック電極の製造方法 |
| JPH03167877A (ja) * | 1989-11-28 | 1991-07-19 | Sumitomo Electric Ind Ltd | ｎ型立方晶窒化硼素のオーム性電極及びその形成方法 |
| US6555457B1 (en) | 2000-04-07 | 2003-04-29 | Triquint Technology Holding Co. | Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit |
| US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
| TWI291232B (en) * | 2006-01-03 | 2007-12-11 | Univ Nat Chiao Tung | Copper metalized ohmic contact electrode of compound semiconductor device |
| US20100012175A1 (en) | 2008-07-16 | 2010-01-21 | Emcore Solar Power, Inc. | Ohmic n-contact formed at low temperature in inverted metamorphic multijunction solar cells |
| WO2009151979A2 (en) * | 2008-06-09 | 2009-12-17 | 4Power, Llc | High-efficiency solar cell structures and methods |
| US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
| US8604330B1 (en) | 2010-12-06 | 2013-12-10 | 4Power, Llc | High-efficiency solar-cell arrays with integrated devices and methods for forming them |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3239376A (en) * | 1962-06-29 | 1966-03-08 | Bell Telephone Labor Inc | Electrodes to semiconductor wafers |
| NL294675A (it) * | 1962-06-29 | |||
| US3371255A (en) * | 1965-06-09 | 1968-02-27 | Texas Instruments Inc | Gallium arsenide semiconductor device and contact alloy therefor |
| US3523222A (en) * | 1966-09-15 | 1970-08-04 | Texas Instruments Inc | Semiconductive contacts |
| US3518749A (en) * | 1968-02-23 | 1970-07-07 | Rca Corp | Method of making gunn-effect devices |
| US3567508A (en) * | 1968-10-31 | 1971-03-02 | Gen Electric | Low temperature-high vacuum contact formation process |
| US3686539A (en) * | 1970-05-04 | 1972-08-22 | Rca Corp | Gallium arsenide semiconductor device with improved ohmic electrode |
| US3684930A (en) * | 1970-12-28 | 1972-08-15 | Gen Electric | Ohmic contact for group iii-v p-types semiconductors |
| US3728785A (en) * | 1971-04-15 | 1973-04-24 | Monsanto Co | Fabrication of semiconductor devices |
| US3890699A (en) * | 1974-06-04 | 1975-06-24 | Us Army | Method of making an ohmic contact to a semiconductor material |
-
1974
- 1974-09-03 US US05/502,451 patent/US3965279A/en not_active Expired - Lifetime
-
1975
- 1975-07-22 CA CA232,046A patent/CA1022690A/en not_active Expired
- 1975-08-29 JP JP50104166A patent/JPS6016096B2/ja not_active Expired
- 1975-08-29 GB GB35662/75A patent/GB1514795A/en not_active Expired
- 1975-08-29 DE DE2538600A patent/DE2538600C2/de not_active Expired
- 1975-08-29 BE BE159584A patent/BE832890A/xx unknown
- 1975-09-01 IT IT69178/75A patent/IT1047152B/it active
- 1975-09-02 FR FR7526896A patent/FR2284191A1/fr active Granted
- 1975-09-02 NL NL7510327A patent/NL7510327A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2538600A1 (de) | 1976-03-11 |
| US3965279A (en) | 1976-06-22 |
| BE832890A (fr) | 1975-12-16 |
| FR2284191B1 (it) | 1978-03-17 |
| NL7510327A (nl) | 1976-03-05 |
| GB1514795A (en) | 1978-06-21 |
| DE2538600C2 (de) | 1984-09-13 |
| JPS5150665A (en) | 1976-05-04 |
| FR2284191A1 (fr) | 1976-04-02 |
| JPS6016096B2 (ja) | 1985-04-23 |
| CA1022690A (en) | 1977-12-13 |
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