BE769732A - Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu - Google Patents

Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu

Info

Publication number
BE769732A
BE769732A BE769732A BE769732A BE769732A BE 769732 A BE769732 A BE 769732A BE 769732 A BE769732 A BE 769732A BE 769732 A BE769732 A BE 769732A BE 769732 A BE769732 A BE 769732A
Authority
BE
Belgium
Prior art keywords
semiconductor device
manufacture
process allowing
allowing
semiconductor
Prior art date
Application number
BE769732A
Other languages
English (en)
French (fr)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE769732A publication Critical patent/BE769732A/xx

Links

Classifications

    • H10P14/61—
    • H10W10/0126—
    • H10W10/13—
    • H10W20/021—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
BE769732A 1970-07-10 1971-07-08 Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu BE769732A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010207,A NL169121C (nl) 1970-07-10 1970-07-10 Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.

Publications (1)

Publication Number Publication Date
BE769732A true BE769732A (fr) 1972-01-10

Family

ID=19810547

Family Applications (1)

Application Number Title Priority Date Filing Date
BE769732A BE769732A (fr) 1970-07-10 1971-07-08 Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu

Country Status (12)

Country Link
US (1) US3755014A (cg-RX-API-DMAC10.html)
JP (1) JPS517551B1 (cg-RX-API-DMAC10.html)
AT (1) AT329116B (cg-RX-API-DMAC10.html)
BE (1) BE769732A (cg-RX-API-DMAC10.html)
CA (1) CA938032A (cg-RX-API-DMAC10.html)
CH (1) CH528821A (cg-RX-API-DMAC10.html)
DE (1) DE2133979C3 (cg-RX-API-DMAC10.html)
ES (1) ES393038A1 (cg-RX-API-DMAC10.html)
FR (1) FR2098322B1 (cg-RX-API-DMAC10.html)
GB (1) GB1352779A (cg-RX-API-DMAC10.html)
NL (1) NL169121C (cg-RX-API-DMAC10.html)
SE (1) SE367512B (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1388926A (en) * 1972-03-04 1975-03-26 Ferranti Ltd Manufacture of silicon semiconductor devices
NL7204741A (cg-RX-API-DMAC10.html) * 1972-04-08 1973-10-10
US3999213A (en) * 1972-04-14 1976-12-21 U.S. Philips Corporation Semiconductor device and method of manufacturing the device
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
JPS5228550B2 (cg-RX-API-DMAC10.html) * 1972-10-04 1977-07-27
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
JPS5242634B2 (cg-RX-API-DMAC10.html) * 1973-09-03 1977-10-25
JPS604590B2 (ja) * 1973-10-30 1985-02-05 三菱電機株式会社 半導体装置の製造方法
DE2409910C3 (de) * 1974-03-01 1979-03-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
FR2341201A1 (fr) * 1976-02-16 1977-09-09 Radiotechnique Compelec Procede d'isolement entre regions d'un dispositif semiconducteur et dispositif ainsi obtenu
JPS6028397B2 (ja) * 1978-10-26 1985-07-04 株式会社東芝 半導体装置の製造方法
US4381956A (en) * 1981-04-06 1983-05-03 Motorola, Inc. Self-aligned buried channel fabrication process
JPH01214136A (ja) * 1988-02-23 1989-08-28 Mitsubishi Electric Corp 半導体集積装置
US6693308B2 (en) * 2002-02-22 2004-02-17 Semisouth Laboratories, Llc Power SiC devices having raised guard rings

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA826343A (en) * 1969-10-28 Kooi Else Methods of producing a semiconductor device and a semiconductor device produced by said method
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.

Also Published As

Publication number Publication date
CA938032A (en) 1973-12-04
AT329116B (de) 1976-04-26
JPS472520A (cg-RX-API-DMAC10.html) 1972-02-07
NL7010207A (cg-RX-API-DMAC10.html) 1972-01-12
DE2133979A1 (de) 1972-01-13
US3755014A (en) 1973-08-28
CH528821A (de) 1972-09-30
DE2133979C3 (de) 1979-08-23
NL169121C (nl) 1982-06-01
JPS517551B1 (cg-RX-API-DMAC10.html) 1976-03-09
ES393038A1 (es) 1973-08-16
FR2098322A1 (cg-RX-API-DMAC10.html) 1972-03-10
GB1352779A (en) 1974-05-08
FR2098322B1 (cg-RX-API-DMAC10.html) 1974-10-11
DE2133979B2 (de) 1978-12-21
SE367512B (cg-RX-API-DMAC10.html) 1974-05-27
NL169121B (nl) 1982-01-04
ATA594071A (de) 1975-07-15

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