BE547698A - - Google Patents

Info

Publication number
BE547698A
BE547698A BE547698DA BE547698A BE 547698 A BE547698 A BE 547698A BE 547698D A BE547698D A BE 547698DA BE 547698 A BE547698 A BE 547698A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE547698A publication Critical patent/BE547698A/xx
Priority claimed from US507312A external-priority patent/US2763822A/en
Priority claimed from US525595A external-priority patent/US2801375A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Contacts (AREA)
  • Die Bonding (AREA)
  • Ceramic Products (AREA)
BE547698D 1955-05-10 BE547698A (US07223432-20070529-C00017.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US507312A US2763822A (en) 1955-05-10 1955-05-10 Silicon semiconductor devices
US525595A US2801375A (en) 1955-08-01 1955-08-01 Silicon semiconductor devices and processes for making them

Publications (1)

Publication Number Publication Date
BE547698A true BE547698A (US07223432-20070529-C00017.png) 1900-01-01

Family

ID=27055794

Family Applications (2)

Application Number Title Priority Date Filing Date
BE547698D BE547698A (US07223432-20070529-C00017.png) 1955-05-10
BE550001A BE550001A (fr) 1955-05-10 1956-08-01 Semiconducteurs au silicium et procedes pour leur fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE550001A BE550001A (fr) 1955-05-10 1956-08-01 Semiconducteurs au silicium et procedes pour leur fabrication

Country Status (6)

Country Link
BE (2) BE550001A (US07223432-20070529-C00017.png)
CH (2) CH350720A (US07223432-20070529-C00017.png)
DE (2) DE1050450B (US07223432-20070529-C00017.png)
FR (2) FR1153475A (US07223432-20070529-C00017.png)
GB (2) GB832067A (US07223432-20070529-C00017.png)
NL (2) NL109558C (US07223432-20070529-C00017.png)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1285068B (de) * 1957-01-11 1968-12-12 Siemens Ag Legierungskontakt auf mit einer Goldschicht versehenen Halbleiterkristallen
NL243222A (US07223432-20070529-C00017.png) * 1958-09-10 1900-01-01
NL242265A (US07223432-20070529-C00017.png) * 1958-09-30 1900-01-01
NL239127A (US07223432-20070529-C00017.png) * 1959-05-12
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL249694A (US07223432-20070529-C00017.png) * 1959-12-30
DE1113519B (de) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Siliziumgleichrichter fuer hohe Stromstaerken
NL260951A (US07223432-20070529-C00017.png) * 1960-03-07
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
NL269346A (US07223432-20070529-C00017.png) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
NL270339A (US07223432-20070529-C00017.png) * 1960-10-20
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1229649B (de) * 1961-08-10 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-elementes und Halbleiteranordnung mit einem nach diesem Verfahren hergestellten Halbleiterelement
DE1246129B (de) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Verfahren zum Herstellen eines Halbleiterbauelementes
DE1185731B (de) * 1962-03-28 1965-01-21 Siemens Ag Halbleiterelement mit pn-UEbergang
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
FR2046592A5 (US07223432-20070529-C00017.png) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
SE500281C2 (sv) * 1992-11-24 1994-05-24 Asea Brown Boveri Anordning för kylning av skivformiga kraftelektronikelement jämte skivformigt kraftelektronikelement avsett att monteras i sådan kylanordning
JP6079375B2 (ja) * 2013-03-29 2017-02-15 三菱マテリアル株式会社 ハンダ粉末及びその製造方法並びにこの粉末を用いたハンダ用ペースト
DE102015108056A1 (de) 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2220961A (en) * 1937-11-06 1940-11-12 Bell Telephone Labor Inc Soldering alloy
US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
DE872602C (de) * 1951-03-20 1953-04-02 Siemens Ag Verfahren zur Befestigung von Halbleitern
NL91163C (US07223432-20070529-C00017.png) * 1952-09-16
BE525280A (US07223432-20070529-C00017.png) * 1952-12-31 1900-01-01
GB8817261D0 (en) * 1988-07-20 1988-08-24 Sperry Sun Inc Down-hole bearing assemblies for maintaining survey instrument assembly & core barrel orientation

Also Published As

Publication number Publication date
NL109558C (US07223432-20070529-C00017.png) 1900-01-01
CH350720A (de) 1960-12-15
BE550001A (fr) 1956-08-31
DE1292260B (de) 1969-04-10
FR1157057A (fr) 1958-05-27
CH367896A (de) 1963-03-15
GB832067A (en) 1960-04-06
NL208617A (US07223432-20070529-C00017.png) 1900-01-01
DE1050450B (de) 1959-02-12
GB823559A (en) 1959-11-11
FR1153475A (fr) 1958-03-11

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