AU5382600A - Method and apparatus for tuning the impedance of integrated semiconductor devices - Google Patents

Method and apparatus for tuning the impedance of integrated semiconductor devices

Info

Publication number
AU5382600A
AU5382600A AU53826/00A AU5382600A AU5382600A AU 5382600 A AU5382600 A AU 5382600A AU 53826/00 A AU53826/00 A AU 53826/00A AU 5382600 A AU5382600 A AU 5382600A AU 5382600 A AU5382600 A AU 5382600A
Authority
AU
Australia
Prior art keywords
tuning
impedance
semiconductor devices
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU53826/00A
Other languages
English (en)
Inventor
Yves Gagnon
Michel Meunier
Yvon Savaria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LTRIM TECHNOLOGIES Inc
Original Assignee
LTRIM TECHNOLOGIES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LTRIM TECHNOLOGIES Inc filed Critical LTRIM TECHNOLOGIES Inc
Publication of AU5382600A publication Critical patent/AU5382600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
    • H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU53826/00A 1999-06-14 2000-06-13 Method and apparatus for tuning the impedance of integrated semiconductor devices Abandoned AU5382600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09332059 1999-06-14
US09/332,059 US6329272B1 (en) 1999-06-14 1999-06-14 Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
PCT/CA2000/000715 WO2000077836A1 (en) 1999-06-14 2000-06-13 Method and apparatus for tuning the impedance of integrated semiconductor devices

Publications (1)

Publication Number Publication Date
AU5382600A true AU5382600A (en) 2001-01-02

Family

ID=23296552

Family Applications (1)

Application Number Title Priority Date Filing Date
AU53826/00A Abandoned AU5382600A (en) 1999-06-14 2000-06-13 Method and apparatus for tuning the impedance of integrated semiconductor devices

Country Status (6)

Country Link
US (1) US6329272B1 (enExample)
EP (1) EP1188178A1 (enExample)
JP (1) JP4245294B2 (enExample)
AU (1) AU5382600A (enExample)
CA (2) CA2277607C (enExample)
WO (1) WO2000077836A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335208B1 (en) * 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
WO2004017409A1 (en) * 2002-08-14 2004-02-26 Technologies Ltrim Inc. Method for modifying the impedance of semiconductor devices using a focused heating source
CA2398166A1 (en) * 2002-08-14 2004-02-14 Technologies Ltrim Inc. Method for modifying the impedance of semiconductor devices using a focused heating source
US7714694B2 (en) * 2004-09-21 2010-05-11 Microbridge Technologies Canada, Inc. Compensating for linear and non-linear trimming-induced shift of temperature coefficient of resistance
US7261461B2 (en) * 2004-09-23 2007-08-28 Microbridge Technologies Inc. Measuring and trimming circuit components embedded in micro-platforms
US7426381B2 (en) * 2005-03-23 2008-09-16 Oracle International Corporation Device billing agent
US20070117227A1 (en) * 2005-11-23 2007-05-24 Gsi Group Corporation Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser
CA2533225C (en) 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
US20090075402A1 (en) * 2007-09-18 2009-03-19 Michel Meunier Manipulation of focused heating source based on in situ optical measurements
JP5302937B2 (ja) * 2010-07-20 2013-10-02 株式会社イー・エム・ディー 不純物活性化方法、半導体装置の製造方法
US11240881B2 (en) 2019-04-08 2022-02-01 Watlow Electric Manufacturing Company Method of manufacturing and adjusting a resistive heater

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US4298855A (en) 1980-08-26 1981-11-03 Honeywell Inc. Conductive polymer film humidity sensor
US4810663A (en) 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
US4585490A (en) 1981-12-07 1986-04-29 Massachusetts Institute Of Technology Method of making a conductive path in multi-layer metal structures by low power laser beam
US4694568A (en) 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4636404A (en) 1982-06-17 1987-01-13 Mass. Institute Of Technology Method and apparatus for forming low resistance lateral links in a semiconductor device
JPS59125121A (ja) 1982-12-29 1984-07-19 Fujitsu Ltd Ｒ―２ｒラダーデジタル―アナログ変換回路
DE3319605A1 (de) 1983-05-30 1984-12-06 Siemens AG, 1000 Berlin und 8000 München Sensor mit polykristallinen silicium-widerstaenden
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JPS59229838A (ja) 1984-05-21 1984-12-24 Hitachi Ltd 半導体集積回路
US4566936A (en) 1984-11-05 1986-01-28 North American Philips Corporation Method of trimming precision resistors
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US4792779A (en) 1986-09-19 1988-12-20 Hughes Aircraft Company Trimming passive components buried in multilayer structures
US4843034A (en) 1987-06-12 1989-06-27 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits
JPH0718964B2 (ja) 1987-06-29 1995-03-06 日本電信電話株式会社 集積光デバイスおよびその製造方法
US5075241A (en) 1988-01-29 1991-12-24 Texas Instruments Incorporated Method of forming a recessed contact bipolar transistor and field effect device
US4937475B1 (en) 1988-09-19 1994-03-29 Massachusetts Inst Technology Laser programmable integrated circuit
US4929923A (en) 1989-05-26 1990-05-29 Harris Corporation Thin film resistors and method of trimming
US5124596A (en) 1989-09-18 1992-06-23 Analog Devices, Inc. Single-temperature-trimmable fet input circuit having active channel segments of different areas
US5284794A (en) 1990-02-21 1994-02-08 Nippondenso Co., Ltd. Method of making semiconductor device using a trimmable thin-film resistor
JP2664793B2 (ja) 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
IL94340A (en) 1990-05-09 1994-05-30 Vishay Israel Ltd Selectable high precision resistor and technique for production thereof
US5119538A (en) 1990-08-10 1992-06-09 Ranco Incorporated Of Delaware Method of making a temperature sensor
JP2725714B2 (ja) 1991-01-04 1998-03-11 シャープ株式会社 Ｃｃｄ固体撮像素子
US5110758A (en) 1991-06-03 1992-05-05 Motorola, Inc. Method of heat augmented resistor trimming
US5233327A (en) 1991-07-01 1993-08-03 International Business Machines Corporation Active resistor trimming by differential annealing
US5262615A (en) 1991-11-05 1993-11-16 Honeywell Inc. Film resistor made by laser trimming
US5209122A (en) 1991-11-20 1993-05-11 Delco Electronics Corporation Pressurer sensor and method for assembly of same
JP2524049B2 (ja) 1992-03-30 1996-08-14 株式会社日立製作所 半導体集積回路およびその製造方法
JPH0613549A (ja) 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置
US5389956A (en) 1992-08-18 1995-02-14 Xerox Corporation Techniques for improving droplet uniformity in acoustic ink printing
US5420515A (en) 1992-08-28 1995-05-30 Hewlett-Packard Company Active circuit trimming with AC and DC response trims relative to a known response
US5265114C1 (en) 1992-09-10 2001-08-21 Electro Scient Ind Inc System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device
GB2276725B (en) 1993-04-01 1996-10-02 Ford Motor Co Calibrating a mass air flow sensor
DE69427501T2 (de) 1993-04-05 2002-05-23 Denso Corp., Kariya Halbleiteranordnung mit Dünnfilm-Widerstand
GB9406900D0 (en) 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
US5507171A (en) 1994-04-15 1996-04-16 Ssi Technologies, Inc. Electronic circuit for a transducer
US5685995A (en) 1994-11-22 1997-11-11 Electro Scientific Industries, Inc. Method for laser functional trimming of films and devices

Also Published As

Publication number Publication date
CA2671386A1 (en) 2000-12-14
CA2277607C (en) 2009-07-07
CA2277607A1 (en) 2000-12-14
JP4245294B2 (ja) 2009-03-25
JP2003502841A (ja) 2003-01-21
US6329272B1 (en) 2001-12-11
WO2000077836A1 (en) 2000-12-21
EP1188178A1 (en) 2002-03-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase