CA2277607C - Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source - Google Patents
Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source Download PDFInfo
- Publication number
- CA2277607C CA2277607C CA002277607A CA2277607A CA2277607C CA 2277607 C CA2277607 C CA 2277607C CA 002277607 A CA002277607 A CA 002277607A CA 2277607 A CA2277607 A CA 2277607A CA 2277607 C CA2277607 C CA 2277607C
- Authority
- CA
- Canada
- Prior art keywords
- region
- impedance
- heating
- heating pulse
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 181
- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 238000000034 method Methods 0.000 title claims abstract description 108
- 239000002019 doping agent Substances 0.000 claims abstract description 230
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 239000000155 melt Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- 230000001965 increasing effect Effects 0.000 abstract description 13
- 230000008018 melting Effects 0.000 abstract description 12
- 238000002844 melting Methods 0.000 abstract description 12
- 230000009471 action Effects 0.000 abstract description 7
- 230000008859 change Effects 0.000 description 24
- 239000010409 thin film Substances 0.000 description 14
- 238000009966 trimming Methods 0.000 description 11
- 230000003247 decreasing effect Effects 0.000 description 10
- 238000000608 laser ablation Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002679 ablation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000012804 iterative process Methods 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 241000501667 Etroplus Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/242—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by laser
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002671386A CA2671386A1 (en) | 1999-06-14 | 1999-07-16 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/332,059 | 1999-06-14 | ||
| US09/332,059 US6329272B1 (en) | 1999-06-14 | 1999-06-14 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002671386A Division CA2671386A1 (en) | 1999-06-14 | 1999-07-16 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2277607A1 CA2277607A1 (en) | 2000-12-14 |
| CA2277607C true CA2277607C (en) | 2009-07-07 |
Family
ID=23296552
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002277607A Expired - Fee Related CA2277607C (en) | 1999-06-14 | 1999-07-16 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
| CA002671386A Abandoned CA2671386A1 (en) | 1999-06-14 | 1999-07-16 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002671386A Abandoned CA2671386A1 (en) | 1999-06-14 | 1999-07-16 | Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6329272B1 (enExample) |
| EP (1) | EP1188178A1 (enExample) |
| JP (1) | JP4245294B2 (enExample) |
| AU (1) | AU5382600A (enExample) |
| CA (2) | CA2277607C (enExample) |
| WO (1) | WO2000077836A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335208B1 (en) | 1999-05-10 | 2002-01-01 | Intersil Americas Inc. | Laser decapsulation method |
| WO2004017409A1 (en) * | 2002-08-14 | 2004-02-26 | Technologies Ltrim Inc. | Method for modifying the impedance of semiconductor devices using a focused heating source |
| CA2398166A1 (en) * | 2002-08-14 | 2004-02-14 | Technologies Ltrim Inc. | Method for modifying the impedance of semiconductor devices using a focused heating source |
| US7714694B2 (en) * | 2004-09-21 | 2010-05-11 | Microbridge Technologies Canada, Inc. | Compensating for linear and non-linear trimming-induced shift of temperature coefficient of resistance |
| US7261461B2 (en) * | 2004-09-23 | 2007-08-28 | Microbridge Technologies Inc. | Measuring and trimming circuit components embedded in micro-platforms |
| US7426381B2 (en) * | 2005-03-23 | 2008-09-16 | Oracle International Corporation | Device billing agent |
| US20070117227A1 (en) * | 2005-11-23 | 2007-05-24 | Gsi Group Corporation | Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser |
| CA2533225C (en) * | 2006-01-19 | 2016-03-22 | Technologies Ltrim Inc. | A tunable semiconductor component provided with a current barrier |
| US20090075402A1 (en) * | 2007-09-18 | 2009-03-19 | Michel Meunier | Manipulation of focused heating source based on in situ optical measurements |
| JP5302937B2 (ja) * | 2010-07-20 | 2013-10-02 | 株式会社イー・エム・ディー | 不純物活性化方法、半導体装置の製造方法 |
| US11240881B2 (en) | 2019-04-08 | 2022-02-01 | Watlow Electric Manufacturing Company | Method of manufacturing and adjusting a resistive heater |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3191151A (en) | 1962-11-26 | 1965-06-22 | Fairchild Camera Instr Co | Programmable circuit |
| JPS5633822A (en) | 1979-08-29 | 1981-04-04 | Hitachi Ltd | Preparation of semiconductor device |
| US4298855A (en) | 1980-08-26 | 1981-11-03 | Honeywell Inc. | Conductive polymer film humidity sensor |
| US4585490A (en) | 1981-12-07 | 1986-04-29 | Massachusetts Institute Of Technology | Method of making a conductive path in multi-layer metal structures by low power laser beam |
| US4810663A (en) | 1981-12-07 | 1989-03-07 | Massachusetts Institute Of Technology | Method of forming conductive path by low power laser pulse |
| US4694568A (en) | 1982-01-07 | 1987-09-22 | North American Philips Corporation | Method of manufacturing chip resistors with edge around terminations |
| US4636404A (en) | 1982-06-17 | 1987-01-13 | Mass. Institute Of Technology | Method and apparatus for forming low resistance lateral links in a semiconductor device |
| JPS59125121A (ja) | 1982-12-29 | 1984-07-19 | Fujitsu Ltd | Ｒ―２ｒラダーデジタル―アナログ変換回路 |
| DE3319605A1 (de) | 1983-05-30 | 1984-12-06 | Siemens AG, 1000 Berlin und 8000 München | Sensor mit polykristallinen silicium-widerstaenden |
| GB8403968D0 (en) | 1984-02-15 | 1984-03-21 | Heraeus Gmbh W C | Chip resistors |
| JPS59229838A (ja) | 1984-05-21 | 1984-12-24 | Hitachi Ltd | 半導体集積回路 |
| US4566936A (en) | 1984-11-05 | 1986-01-28 | North American Philips Corporation | Method of trimming precision resistors |
| GB8531324D0 (en) | 1985-12-19 | 1986-01-29 | Gen Electric Co Plc | Circuit arrangement |
| US4792779A (en) | 1986-09-19 | 1988-12-20 | Hughes Aircraft Company | Trimming passive components buried in multilayer structures |
| US4843034A (en) | 1987-06-12 | 1989-06-27 | Massachusetts Institute Of Technology | Fabrication of interlayer conductive paths in integrated circuits |
| JPH0718964B2 (ja) | 1987-06-29 | 1995-03-06 | 日本電信電話株式会社 | 集積光デバイスおよびその製造方法 |
| US5075241A (en) | 1988-01-29 | 1991-12-24 | Texas Instruments Incorporated | Method of forming a recessed contact bipolar transistor and field effect device |
| US4937475B1 (en) | 1988-09-19 | 1994-03-29 | Massachusetts Inst Technology | Laser programmable integrated circuit |
| US4929923A (en) | 1989-05-26 | 1990-05-29 | Harris Corporation | Thin film resistors and method of trimming |
| US5124596A (en) | 1989-09-18 | 1992-06-23 | Analog Devices, Inc. | Single-temperature-trimmable fet input circuit having active channel segments of different areas |
| US5284794A (en) | 1990-02-21 | 1994-02-08 | Nippondenso Co., Ltd. | Method of making semiconductor device using a trimmable thin-film resistor |
| JP2664793B2 (ja) | 1990-04-06 | 1997-10-22 | 株式会社東芝 | 半導体装置の製造方法 |
| IL94340A (en) | 1990-05-09 | 1994-05-30 | Vishay Israel Ltd | Selectable high precision resistor and technique for production thereof |
| US5119538A (en) | 1990-08-10 | 1992-06-09 | Ranco Incorporated Of Delaware | Method of making a temperature sensor |
| JP2725714B2 (ja) | 1991-01-04 | 1998-03-11 | シャープ株式会社 | Ｃｃｄ固体撮像素子 |
| US5110758A (en) | 1991-06-03 | 1992-05-05 | Motorola, Inc. | Method of heat augmented resistor trimming |
| US5233327A (en) | 1991-07-01 | 1993-08-03 | International Business Machines Corporation | Active resistor trimming by differential annealing |
| US5262615A (en) | 1991-11-05 | 1993-11-16 | Honeywell Inc. | Film resistor made by laser trimming |
| US5209122A (en) | 1991-11-20 | 1993-05-11 | Delco Electronics Corporation | Pressurer sensor and method for assembly of same |
| JP2524049B2 (ja) | 1992-03-30 | 1996-08-14 | 株式会社日立製作所 | 半導体集積回路およびその製造方法 |
| JPH0613549A (ja) | 1992-06-25 | 1994-01-21 | Seiko Epson Corp | 半導体装置 |
| US5389956A (en) | 1992-08-18 | 1995-02-14 | Xerox Corporation | Techniques for improving droplet uniformity in acoustic ink printing |
| US5420515A (en) | 1992-08-28 | 1995-05-30 | Hewlett-Packard Company | Active circuit trimming with AC and DC response trims relative to a known response |
| US5265114C1 (en) | 1992-09-10 | 2001-08-21 | Electro Scient Ind Inc | System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device |
| GB2276725B (en) | 1993-04-01 | 1996-10-02 | Ford Motor Co | Calibrating a mass air flow sensor |
| US5525831A (en) | 1993-04-05 | 1996-06-11 | Nippondenso Co., Ltd. | Semiconductor device with thin film resistor having reduced film thickness sensitivity during trimming process |
| GB9406900D0 (en) | 1994-04-07 | 1994-06-01 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin -film transistors |
| US5507171A (en) | 1994-04-15 | 1996-04-16 | Ssi Technologies, Inc. | Electronic circuit for a transducer |
| US5685995A (en) | 1994-11-22 | 1997-11-11 | Electro Scientific Industries, Inc. | Method for laser functional trimming of films and devices |
-
1999
- 1999-06-14 US US09/332,059 patent/US6329272B1/en not_active Expired - Lifetime
- 1999-07-16 CA CA002277607A patent/CA2277607C/en not_active Expired - Fee Related
- 1999-07-16 CA CA002671386A patent/CA2671386A1/en not_active Abandoned
-
2000
- 2000-06-13 EP EP00938414A patent/EP1188178A1/en not_active Withdrawn
- 2000-06-13 AU AU53826/00A patent/AU5382600A/en not_active Abandoned
- 2000-06-13 WO PCT/CA2000/000715 patent/WO2000077836A1/en not_active Ceased
- 2000-06-13 JP JP2001503218A patent/JP4245294B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU5382600A (en) | 2001-01-02 |
| US6329272B1 (en) | 2001-12-11 |
| WO2000077836A1 (en) | 2000-12-21 |
| JP4245294B2 (ja) | 2009-03-25 |
| CA2277607A1 (en) | 2000-12-14 |
| CA2671386A1 (en) | 2000-12-14 |
| EP1188178A1 (en) | 2002-03-20 |
| JP2003502841A (ja) | 2003-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20170717 |