AU470370B2 - A paired transistor arrangement - Google Patents

A paired transistor arrangement

Info

Publication number
AU470370B2
AU470370B2 AU53341/73A AU5334173A AU470370B2 AU 470370 B2 AU470370 B2 AU 470370B2 AU 53341/73 A AU53341/73 A AU 53341/73A AU 5334173 A AU5334173 A AU 5334173A AU 470370 B2 AU470370 B2 AU 470370B2
Authority
AU
Australia
Prior art keywords
transistor arrangement
paired transistor
paired
arrangement
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU53341/73A
Other languages
English (en)
Other versions
AU5334173A (en
Inventor
Gunn Ide 2. Mitsuo Aihara 3. Takao Arakawa I.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of AU5334173A publication Critical patent/AU5334173A/en
Application granted granted Critical
Publication of AU470370B2 publication Critical patent/AU470370B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AU53341/73A 1972-03-16 1973-03-15 A paired transistor arrangement Expired AU470370B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2697772A JPS53675B2 (OSRAM) 1972-03-16 1972-03-16
JPJP26977/72 1972-03-16

Publications (2)

Publication Number Publication Date
AU5334173A AU5334173A (en) 1974-09-19
AU470370B2 true AU470370B2 (en) 1976-03-11

Family

ID=12208203

Family Applications (1)

Application Number Title Priority Date Filing Date
AU53341/73A Expired AU470370B2 (en) 1972-03-16 1973-03-15 A paired transistor arrangement

Country Status (7)

Country Link
JP (1) JPS53675B2 (OSRAM)
AU (1) AU470370B2 (OSRAM)
CA (1) CA972071A (OSRAM)
DE (1) DE2313196A1 (OSRAM)
FR (1) FR2176129B3 (OSRAM)
GB (1) GB1421924A (OSRAM)
IT (1) IT979867B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586322B2 (ja) * 1975-02-19 1983-02-04 株式会社日立製作所 熱帰還を考慮した集積回路
JPS54107688A (en) * 1978-02-13 1979-08-23 Seiko Epson Corp Semiconductor integrated circuit for temperature detection
US4467227A (en) * 1981-10-29 1984-08-21 Hughes Aircraft Company Channel charge compensation switch with first order process independence
JPS5894232A (ja) * 1981-11-30 1983-06-04 Toshiba Corp 半導体アナログスイッチ回路
JPH0642537B2 (ja) * 1985-11-15 1994-06-01 株式会社東芝 半導体装置
DE3818533C2 (de) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Feldeffekttransistor
JP3516307B2 (ja) * 1992-12-24 2004-04-05 ヒュンダイ エレクトロニクス アメリカ デジタルトランジスタで構成される差動アナログトランジスタ
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
JP3523521B2 (ja) 1998-04-09 2004-04-26 松下電器産業株式会社 Ｍｏｓトランジスタ対装置
JP2009188223A (ja) * 2008-02-07 2009-08-20 Seiko Instruments Inc 半導体装置
JP5945155B2 (ja) 2012-05-07 2016-07-05 矢崎総業株式会社 電線の外部導体端子の接続構造
JP5863892B2 (ja) * 2014-07-07 2016-02-17 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
JPS4895194A (OSRAM) 1973-12-06
FR2176129A1 (OSRAM) 1973-10-26
DE2313196A1 (de) 1973-10-04
IT979867B (it) 1974-09-30
CA972071A (en) 1975-07-29
GB1421924A (en) 1976-01-21
JPS53675B2 (OSRAM) 1978-01-11
FR2176129B3 (OSRAM) 1976-03-12
AU5334173A (en) 1974-09-19

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