AU2010212553B2 - Migration and plasma enhanced chemical vapor deposition - Google Patents

Migration and plasma enhanced chemical vapor deposition Download PDF

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Publication number
AU2010212553B2
AU2010212553B2 AU2010212553A AU2010212553A AU2010212553B2 AU 2010212553 B2 AU2010212553 B2 AU 2010212553B2 AU 2010212553 A AU2010212553 A AU 2010212553A AU 2010212553 A AU2010212553 A AU 2010212553A AU 2010212553 B2 AU2010212553 B2 AU 2010212553B2
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plasma
species
nitrogen
group iii
substrate
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AU2010212553A1 (en
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Kenneth Scott Alexander Butcher
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AU2010212553A 2009-02-11 2010-02-10 Migration and plasma enhanced chemical vapor deposition Active AU2010212553B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CA2653581A CA2653581A1 (en) 2009-02-11 2009-02-11 Migration and plasma enhanced chemical vapour deposition
CA2653581 2009-02-11
US18595309P 2009-06-10 2009-06-10
US61/185,953 2009-06-10
PCT/IB2010/000390 WO2010092482A2 (en) 2009-02-11 2010-02-10 Migration and plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
AU2010212553A1 AU2010212553A1 (en) 2011-09-15
AU2010212553B2 true AU2010212553B2 (en) 2014-05-15

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Family Applications (1)

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AU2010212553A Active AU2010212553B2 (en) 2009-02-11 2010-02-10 Migration and plasma enhanced chemical vapor deposition

Country Status (6)

Country Link
US (2) US8580670B2 (https=)
EP (1) EP2396808B1 (https=)
JP (1) JP2012517711A (https=)
AU (1) AU2010212553B2 (https=)
CA (2) CA2653581A1 (https=)
WO (1) WO2010092482A2 (https=)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140008210A1 (en) * 2012-07-06 2014-01-09 Aviva Biosciences Corporation Methods and compositions for separating or enriching cells
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
CN102414797A (zh) * 2009-04-29 2012-04-11 应用材料公司 在HVPE中形成原位预GaN沉积层的方法
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110117728A1 (en) 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
CN102414846A (zh) * 2009-10-07 2012-04-11 应用材料公司 用于led制造的改良多腔室分离处理
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
JP5759690B2 (ja) * 2010-08-30 2015-08-05 株式会社日立国際電気 膜の形成方法、半導体装置の製造方法及び基板処理装置
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US8143147B1 (en) * 2011-02-10 2012-03-27 Intermolecular, Inc. Methods and systems for forming thin films
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER
US20120258555A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US8524581B2 (en) * 2011-12-29 2013-09-03 Intermolecular, Inc. GaN epitaxy with migration enhancement and surface energy modification
WO2013158210A2 (en) 2012-02-17 2013-10-24 Yale University Heterogeneous material integration through guided lateral growth
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System
US9738976B2 (en) * 2013-02-27 2017-08-22 Ioxus, Inc. Energy storage device assembly
US9431218B2 (en) 2013-03-15 2016-08-30 Tokyo Electron Limited Scalable and uniformity controllable diffusion plasma source
US9711352B2 (en) 2013-03-15 2017-07-18 Yale University Large-area, laterally-grown epitaxial semiconductor layers
SG11201600440VA (en) * 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
JP6406811B2 (ja) * 2013-11-20 2018-10-17 国立大学法人名古屋大学 Ｉｉｉ 族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法
US20170183776A1 (en) * 2014-02-11 2017-06-29 Kenneth Scott Alexander Butcher Electrostatic control of metal wetting layers during deposition
WO2015160903A1 (en) * 2014-04-16 2015-10-22 Yale University Nitrogen-polar semipolar gan layers and devices on sapphire substrates
CN106233429B (zh) 2014-04-16 2019-06-18 耶鲁大学 获得平坦的半极性氮化镓表面的方法
JP6562350B2 (ja) * 2015-08-26 2019-08-21 国立大学法人名古屋大学 Ｉｉｉ族窒化物半導体装置の製造装置および製造方法ならびに半導体ウエハの製造方法
JP6527482B2 (ja) 2016-03-14 2019-06-05 東芝デバイス＆ストレージ株式会社 半導体製造装置
JP6515050B2 (ja) * 2016-03-15 2019-05-15 東芝デバイス＆ストレージ株式会社 半導体製造装置
EP3459123B1 (en) * 2016-05-20 2020-03-18 Lumileds LLC Methods for using remote plasma chemical vapor deposition (rp-cvd) and sputtering deposition to grow layers in light emitting devices
JP2019531245A (ja) 2016-08-12 2019-10-31 イェール ユニバーシティーＹａｌｅ Ｕｎｉｖｅｒｓｉｔｙ 成長の際に窒素極性ファセットを排除することによる異種基板上で成長する積層欠陥のない半極性および非極性ＧａＮ
US10580661B2 (en) 2016-12-14 2020-03-03 Mattson Technology, Inc. Atomic layer etch process using plasma in conjunction with a rapid thermal activation process
US10361143B2 (en) * 2017-06-01 2019-07-23 Raytheon Company Apparatus and method for reconfigurable thermal management using flow control of liquid metal
JP6744347B2 (ja) * 2018-03-02 2020-08-19 東芝デバイス＆ストレージ株式会社 半導体装置の製造方法
JP6744346B2 (ja) * 2018-03-02 2020-08-19 東芝デバイス＆ストレージ株式会社 成膜装置
JP7126381B2 (ja) * 2018-05-21 2022-08-26 東京エレクトロン株式会社 成膜装置および成膜方法
JP7202604B2 (ja) * 2018-10-23 2023-01-12 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体素子とその製造方法および半導体ウエハの製造方法およびテンプレート基板の製造方法
US12018374B2 (en) * 2019-03-08 2024-06-25 Dsgi Technologies, Inc. System and method of low temperature thin film deposition and in-situ annealing
JP6710795B2 (ja) * 2019-03-13 2020-06-17 東芝デバイス＆ストレージ株式会社 半導体装置の製造方法
CN110016656B (zh) * 2019-05-23 2020-11-24 深圳市华星光电技术有限公司 化学气相沉积腔室
CN111268685B (zh) * 2020-03-09 2022-10-28 邓咏兰 一种气相二氧化硅的合成工艺
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
JP7722691B2 (ja) * 2021-07-30 2025-08-13 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体素子の製造方法
US20260005028A1 (en) * 2024-06-28 2026-01-01 Applied Materials, Inc. Pulsing deposition using fast response mfc
US20260009118A1 (en) * 2024-07-08 2026-01-08 Applied Materials, Inc. Selective etching of silicon nitride dielectrics with microwave oxidation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006034540A1 (en) * 2004-09-27 2006-04-06 Gallium Enterprises Pty Ltd Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film
US20060110943A1 (en) * 2004-08-27 2006-05-25 Johan Swerts Remote plasma activated nitridation

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150417A (ja) 1983-02-08 1984-08-28 Toshiba Corp 気相成長方法およびその装置
US4614961A (en) 1984-10-09 1986-09-30 Honeywell Inc. Tunable cut-off UV detector based on the aluminum gallium nitride material system
US4616248A (en) 1985-05-20 1986-10-07 Honeywell Inc. UV photocathode using negative electron affinity effect in Alx Ga1 N
US4753818A (en) * 1986-07-25 1988-06-28 Hughes Aircraft Company Process for photochemical vapor deposition of oxide layers at enhanced deposition rates
US4830702A (en) 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
EP0322466A1 (en) 1987-12-24 1989-07-05 Ibm Deutschland Gmbh PECVD (plasma enhanced chemical vapor deposition) method for deposition of tungsten or layers containing tungsten by in situ formation of tungsten fluorides
JPH01204411A (ja) 1988-02-09 1989-08-17 Nec Corp 半導体装置の製造方法
US5102694A (en) 1990-09-27 1992-04-07 Cvd Incorporated Pulsed chemical vapor deposition of gradient index optical material
US5133986A (en) 1990-10-05 1992-07-28 International Business Machines Corporation Plasma enhanced chemical vapor processing system using hollow cathode effect
EP0525297A3 (en) 1991-05-08 1993-10-06 Fujitsu Limited Method of growing doped crystal
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
GB2313606A (en) 1996-06-01 1997-12-03 Sharp Kk Forming a compound semiconductor film
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6197683B1 (en) 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
JP3844274B2 (ja) 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置及びプラズマｃｖｄ方法
ID29872A (id) 1999-01-12 2001-10-18 Island Oasis Frozen Cocktail C Alat pemroses makanan dengan penggerak magnetik
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
SE516722C2 (sv) * 1999-04-28 2002-02-19 Hana Barankova Förfarande och apparat för plasmabehandling av gas
US6563144B2 (en) * 1999-09-01 2003-05-13 The Regents Of The University Of California Process for growing epitaxial gallium nitride and composite wafers
US6444039B1 (en) 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US6745717B2 (en) * 2000-06-22 2004-06-08 Arizona Board Of Regents Method and apparatus for preparing nitride semiconductor surfaces
TW527436B (en) 2000-06-23 2003-04-11 Anelva Corp Chemical vapor deposition system
US6600169B2 (en) * 2000-09-22 2003-07-29 Andreas Stintz Quantum dash device
US6690042B2 (en) 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
US6764888B2 (en) 2000-09-27 2004-07-20 Sensor Electronic Technology, Inc. Method of producing nitride-based heterostructure devices
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US7867905B2 (en) 2001-04-21 2011-01-11 Tegal Corporation System and method for semiconductor processing
US7442615B2 (en) 2001-04-21 2008-10-28 Tegal Corporation Semiconductor processing system and method
US6610169B2 (en) 2001-04-21 2003-08-26 Simplus Systems Corporation Semiconductor processing system and method
US20030049916A1 (en) 2001-08-20 2003-03-13 The Hong Kong Polytechnic University Development of an intermediate-temperature buffer layer for the growth of high-quality GaxInyAlzN epitaxial layers by molecular beam epitaxy
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
AUPS240402A0 (en) 2002-05-17 2002-06-13 Macquarie Research Limited Gallium nitride
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6902774B2 (en) * 2002-07-25 2005-06-07 Inficon Gmbh Method of manufacturing a device
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
JP2004140339A (ja) 2002-09-25 2004-05-13 Univ Chiba 窒化物系ヘテロ構造を有するデバイス及びその製造方法
JP3574651B2 (ja) * 2002-12-05 2004-10-06 東京エレクトロン株式会社 成膜方法および成膜装置
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7070833B2 (en) 2003-03-05 2006-07-04 Restek Corporation Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
US7192849B2 (en) 2003-05-07 2007-03-20 Sensor Electronic Technology, Inc. Methods of growing nitride-based film using varying pulses
US7268375B2 (en) 2003-10-27 2007-09-11 Sensor Electronic Technology, Inc. Inverted nitride-based semiconductor structure
DE10350752A1 (de) 2003-10-30 2005-06-09 Infineon Technologies Ag Verfahren zum Ausbilden eines Dielektrikums auf einer kupferhaltigen Metallisierung und Kondensatoranordnung
JP2005229013A (ja) 2004-02-16 2005-08-25 Ishikawajima Harima Heavy Ind Co Ltd 窒化物半導体の成長方法
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US20050223986A1 (en) 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
KR101084631B1 (ko) 2004-05-13 2011-11-18 매그나칩 반도체 유한회사 퍼지 펄스트 ｍｏｃｖｄ 방법 및 이를 이용한 반도체소자의 유전막 제조방법
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US7326963B2 (en) 2004-12-06 2008-02-05 Sensor Electronic Technology, Inc. Nitride-based light emitting heterostructure
US7491626B2 (en) 2005-06-20 2009-02-17 Sensor Electronic Technology, Inc. Layer growth using metal film and/or islands
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7897217B2 (en) * 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US8603248B2 (en) 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
AU2007313096B2 (en) 2006-03-10 2011-11-10 Unm Rainforest Innovations Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices
US20070215036A1 (en) 2006-03-15 2007-09-20 Hyung-Sang Park Method and apparatus of time and space co-divided atomic layer deposition
KR100782291B1 (ko) 2006-05-11 2007-12-05 주식회사 아토 가스분리형 샤워헤드 및 이를 이용한 펄스 ｃｖｄ 장치
JP2009538989A (ja) 2006-05-30 2009-11-12 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． パルス化大気圧グロー放電を使用する堆積の方法及び装置
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US8338273B2 (en) 2006-12-15 2012-12-25 University Of South Carolina Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
KR101464228B1 (ko) 2007-01-12 2014-11-21 비코 인스트루먼츠 인코포레이티드 가스 처리 시스템
US8318562B2 (en) 2007-04-02 2012-11-27 University Of South Carolina Method to increase breakdown voltage of semiconductor devices
EP2017884A3 (en) 2007-07-20 2011-03-23 Gallium Enterprises Pty Ltd Buried contact devices for nitride-based films and manufacture thereof
US20110140072A1 (en) 2008-08-21 2011-06-16 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
US8501624B2 (en) * 2008-12-04 2013-08-06 Varian Semiconductor Equipment Associates, Inc. Excited gas injection for ion implant control
CN102395704B (zh) 2009-02-13 2014-02-19 盖利姆企业私人有限公司 等离子体沉积
US8039394B2 (en) * 2009-06-26 2011-10-18 Seagate Technology Llc Methods of forming layers of alpha-tantalum

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060110943A1 (en) * 2004-08-27 2006-05-25 Johan Swerts Remote plasma activated nitridation
WO2006034540A1 (en) * 2004-09-27 2006-04-06 Gallium Enterprises Pty Ltd Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film

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