AU2003255657B2 - Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon - Google Patents

Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon Download PDF

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Publication number
AU2003255657B2
AU2003255657B2 AU2003255657A AU2003255657A AU2003255657B2 AU 2003255657 B2 AU2003255657 B2 AU 2003255657B2 AU 2003255657 A AU2003255657 A AU 2003255657A AU 2003255657 A AU2003255657 A AU 2003255657A AU 2003255657 B2 AU2003255657 B2 AU 2003255657B2
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AU
Australia
Prior art keywords
crucible
composition
rare
graphite
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
AU2003255657A
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English (en)
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AU2003255657A1 (en
Inventor
Alain Iltis
Vladimir Ouspenski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luxium Solutions SAS
Original Assignee
Saint Gobain Cristaux and Detecteurs SAS
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Application filed by Saint Gobain Cristaux and Detecteurs SAS filed Critical Saint Gobain Cristaux and Detecteurs SAS
Publication of AU2003255657A1 publication Critical patent/AU2003255657A1/en
Application granted granted Critical
Publication of AU2003255657B2 publication Critical patent/AU2003255657B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Luminescent Compositions (AREA)
AU2003255657A 2002-06-12 2003-06-11 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon Expired - Fee Related AU2003255657B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0207187A FR2840926B1 (fr) 2002-06-12 2002-06-12 Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare
FR02/07187 2002-06-12
PCT/FR2003/001735 WO2003106741A2 (fr) 2002-06-12 2003-06-11 Procede de manipulation d'un chlorure ou bromure ou iodure de terre rare dans un creuset comprenant du carbone

Publications (2)

Publication Number Publication Date
AU2003255657A1 AU2003255657A1 (en) 2003-12-31
AU2003255657B2 true AU2003255657B2 (en) 2009-07-02

Family

ID=29595156

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003255657A Expired - Fee Related AU2003255657B2 (en) 2002-06-12 2003-06-11 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon

Country Status (14)

Country Link
US (1) US7332028B2 (enExample)
EP (1) EP1516078B1 (enExample)
JP (1) JP4584710B2 (enExample)
CN (1) CN1311106C (enExample)
AT (1) ATE350518T1 (enExample)
AU (1) AU2003255657B2 (enExample)
CA (1) CA2489234A1 (enExample)
DE (1) DE60310932T2 (enExample)
FR (1) FR2840926B1 (enExample)
IL (2) IL165345A0 (enExample)
PL (1) PL206640B1 (enExample)
RU (1) RU2324021C2 (enExample)
UA (1) UA81766C2 (enExample)
WO (1) WO2003106741A2 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1014401C2 (nl) * 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2847594B1 (fr) 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare
FR2855830B1 (fr) * 2003-06-05 2005-07-08 Stichting Tech Wetenschapp Cristaux scintillateurs du type iodure de terre rare
US7129494B2 (en) * 2003-09-24 2006-10-31 Radiation Monitoring Devices, Inc. Very fast doped LaBr3 scintillators and time-of-flight PET
US7329874B2 (en) * 2003-09-24 2008-02-12 Radiation Monitoring Devices, Inc. Lu1-xI3:Cex-a scintillator for gamma-ray spectroscopy and time-of-flight pet
US7084403B2 (en) * 2003-10-17 2006-08-01 General Electric Company Scintillator compositions, and related processes and articles of manufacture
FR2869115B1 (fr) * 2004-04-14 2006-05-26 Saint Gobain Cristaux Detecteu Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit
US20060018566A1 (en) * 2004-07-26 2006-01-26 Coleman Christopher R System and method for adding spatial frequency into an image
US7202477B2 (en) * 2005-03-04 2007-04-10 General Electric Company Scintillator compositions of cerium halides, and related articles and processes
US7767971B2 (en) * 2005-09-16 2010-08-03 Stichting Voor De Technische Wetenschappen High light yield fast scintillator
US7541589B2 (en) * 2006-06-30 2009-06-02 General Electric Company Scintillator compositions based on lanthanide halides, and related methods and articles
US7767975B2 (en) * 2007-12-04 2010-08-03 Saint-Gobain Cristaux Et Detecteurs Ionizing radiation detector
US20090146065A1 (en) * 2007-12-07 2009-06-11 General Electric Company Scintillator materials based on lanthanide silicates or lanthanide phosphates, and related methods and articles
FR2929296B1 (fr) * 2008-03-31 2011-01-21 Saint Gobain Cristaux Detecteurs Recuit de monocristaux
US20100224798A1 (en) * 2008-09-11 2010-09-09 Stichting Voor De Technische Wetenschappen Scintillator based on lanthanum iodide and lanthanum bromide
US20110085957A1 (en) * 2009-10-09 2011-04-14 Johann-Christoph Von Saldern Process for producing scintillation materials of low strain birefringence and high refractive index uniformity
FR2954760B1 (fr) 2009-12-28 2013-12-27 Saint Gobain Cristaux Et Detecteurs Scintillateur en halogenure de terre rare cristallin a face sensible polie
US8912498B2 (en) * 2010-05-10 2014-12-16 University Of Tennessee Research Foundation Halide scintillator for radiation detection
US20120097092A1 (en) * 2010-10-20 2012-04-26 Meng Zhu Apparatus for growing single crystals
FR2978251B1 (fr) 2011-07-19 2014-04-18 Saint Gobain Cristaux Et Detecteurs Detecteur a scintillateur conique
FR3004467B1 (fr) 2013-04-12 2016-05-27 Saint-Gobain Cristaux Et Detecteurs Fabrication d'une elpasolite stoechiometrique
FR3022555B1 (fr) 2014-06-23 2017-12-22 Saint-Gobain Cristaux Et Detecteurs Materiau luminescent a couche photonique texturee
KR102388637B1 (ko) 2016-03-04 2022-04-19 콘티넨탈 테베스 아게 운트 코. 오하게 모터사이클의 롤 각도를 결정하는 방법
CN107215887B (zh) * 2017-06-09 2018-05-04 厦门中烁光电科技有限公司 无水溴化铈的制备方法
CN109988577B (zh) * 2017-12-27 2020-12-25 有研稀土新材料股份有限公司 稀土卤化物闪烁材料及其应用
EP3737732B1 (fr) 2018-01-11 2022-06-01 Stichting voor de Technische Wetenschappen Matériau scintillateur comprenant un halogémure d'alcalino-terreuxcristallin dopé par un activateur et co-dopé par sm2+
CN111186853B (zh) * 2018-10-26 2021-02-09 北京梦晖科技有限公司 一种稀土卤化物的制备方法
CN118899523A (zh) 2020-04-14 2024-11-05 圣戈本陶瓷及塑料股份有限公司 电解质材料及其形成方法
KR102856486B1 (ko) 2020-04-14 2025-09-09 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. 이온 전도성 재료, 이온 전도성 재료를 포함하는 전해질 및 형성 방법
US11978849B2 (en) 2020-08-07 2024-05-07 Saint-Gobain Ceramics & Plastics, Inc. Electrolyte material and methods of forming
FR3114104A1 (fr) 2020-09-15 2022-03-18 Saint-Gobain Cristaux Et Detecteurs Matériau scintillateur comprenant une pérovskite d’halogénure dopée
RU2762083C1 (ru) * 2021-02-01 2021-12-15 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Способ получения кристаллического сцинтиллятора на основе самоактивированного редкоземельного галогенида
US11848414B2 (en) 2021-05-17 2023-12-19 Saint-Gobain Ceramics & Plastics, Inc. Electrolyte material and methods of forming

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4443001A1 (de) * 1993-12-03 1995-06-08 Tosoh Corp Sm·2·+ als aktive Ionen enthaltender Kristall vom fehlgeordneten Fluorit-Typ zum photochemischen Lochbrennen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959442A (en) * 1974-03-07 1976-05-25 Hughes Aircraft Company Preparing single crystals of Li(Ho,Y,Er,Tm,Dy)F4 in HF atmosphere
US4251315A (en) * 1976-11-19 1981-02-17 Hughes Aircraft Company Method of growing metal halide and chalcogenide crystals for use as infrared windows
JPH03285898A (ja) * 1990-04-02 1991-12-17 Nikko Kyodo Co Ltd フッ化イットリウムリチウム系単結晶の製造方法
JPH07157395A (ja) * 1993-12-03 1995-06-20 Tosoh Corp 光化学ホールバーニング結晶及びその製造法
US5911824A (en) * 1997-12-16 1999-06-15 Saint-Gobain Industrial Ceramics, Inc. Method for growing crystal
NL1014401C2 (nl) * 2000-02-17 2001-09-04 Stichting Tech Wetenschapp Ceriumhoudend anorganisch scintillatormateriaal.
FR2847594B1 (fr) * 2002-11-27 2004-12-24 Saint Gobain Cristaux Detecteu Preparation de blocs d'halogenure de terre rare

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4443001A1 (de) * 1993-12-03 1995-06-08 Tosoh Corp Sm·2·+ als aktive Ionen enthaltender Kristall vom fehlgeordneten Fluorit-Typ zum photochemischen Lochbrennen

Also Published As

Publication number Publication date
DE60310932D1 (de) 2007-02-15
RU2005100043A (ru) 2005-06-10
RU2324021C2 (ru) 2008-05-10
IL165345A (en) 2007-10-31
EP1516078A2 (fr) 2005-03-23
FR2840926A1 (fr) 2003-12-19
FR2840926B1 (fr) 2005-03-04
CN1311106C (zh) 2007-04-18
WO2003106741A2 (fr) 2003-12-24
UA81766C2 (uk) 2008-02-11
WO2003106741A3 (fr) 2004-04-15
DE60310932T2 (de) 2007-10-11
PL371976A1 (en) 2005-07-11
US7332028B2 (en) 2008-02-19
IL165345A0 (en) 2006-01-15
ATE350518T1 (de) 2007-01-15
JP4584710B2 (ja) 2010-11-24
PL206640B1 (pl) 2010-09-30
US20050188914A1 (en) 2005-09-01
CA2489234A1 (fr) 2003-12-24
CN1659318A (zh) 2005-08-24
JP2005529058A (ja) 2005-09-29
EP1516078B1 (fr) 2007-01-03
AU2003255657A1 (en) 2003-12-31

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Legal Events

Date Code Title Description
MK25 Application lapsed reg. 22.2i(2) - failure to pay acceptance fee