JP4584710B2 - 炭素含有るつぼ中において希土類塩化物、臭化物もしくは沃化物を処理する方法 - Google Patents
炭素含有るつぼ中において希土類塩化物、臭化物もしくは沃化物を処理する方法 Download PDFInfo
- Publication number
- JP4584710B2 JP4584710B2 JP2004513543A JP2004513543A JP4584710B2 JP 4584710 B2 JP4584710 B2 JP 4584710B2 JP 2004513543 A JP2004513543 A JP 2004513543A JP 2004513543 A JP2004513543 A JP 2004513543A JP 4584710 B2 JP4584710 B2 JP 4584710B2
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- crucible
- composition
- graphite
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 56
- -1 rare earth chloride Chemical class 0.000 title claims abstract description 43
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 30
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 title description 7
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 title description 7
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 42
- 229910052794 bromium Inorganic materials 0.000 claims abstract description 8
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 8
- 125000005843 halogen group Chemical group 0.000 claims abstract description 7
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 7
- 229910052792 caesium Inorganic materials 0.000 claims abstract description 6
- 229910052701 rubidium Inorganic materials 0.000 claims abstract description 6
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 60
- 239000010439 graphite Substances 0.000 claims description 60
- 239000002296 pyrolytic carbon Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 150000004820 halides Chemical class 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 229910052684 Cerium Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 229910016036 BaF 2 Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910002249 LaCl3 Inorganic materials 0.000 description 1
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000012633 nuclear imaging Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002600 positron emission tomography Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0207187A FR2840926B1 (fr) | 2002-06-12 | 2002-06-12 | Utilisation d'un creuset comprenant du carbone pour la croissance de cristaux comprenant un halogenure de terre rare |
| PCT/FR2003/001735 WO2003106741A2 (fr) | 2002-06-12 | 2003-06-11 | Procede de manipulation d'un chlorure ou bromure ou iodure de terre rare dans un creuset comprenant du carbone |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005529058A JP2005529058A (ja) | 2005-09-29 |
| JP2005529058A5 JP2005529058A5 (enExample) | 2006-07-27 |
| JP4584710B2 true JP4584710B2 (ja) | 2010-11-24 |
Family
ID=29595156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004513543A Expired - Lifetime JP4584710B2 (ja) | 2002-06-12 | 2003-06-11 | 炭素含有るつぼ中において希土類塩化物、臭化物もしくは沃化物を処理する方法 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US7332028B2 (enExample) |
| EP (1) | EP1516078B1 (enExample) |
| JP (1) | JP4584710B2 (enExample) |
| CN (1) | CN1311106C (enExample) |
| AT (1) | ATE350518T1 (enExample) |
| AU (1) | AU2003255657B2 (enExample) |
| CA (1) | CA2489234A1 (enExample) |
| DE (1) | DE60310932T2 (enExample) |
| FR (1) | FR2840926B1 (enExample) |
| IL (2) | IL165345A0 (enExample) |
| PL (1) | PL206640B1 (enExample) |
| RU (1) | RU2324021C2 (enExample) |
| UA (1) | UA81766C2 (enExample) |
| WO (1) | WO2003106741A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1014401C2 (nl) * | 2000-02-17 | 2001-09-04 | Stichting Tech Wetenschapp | Ceriumhoudend anorganisch scintillatormateriaal. |
| FR2847594B1 (fr) | 2002-11-27 | 2004-12-24 | Saint Gobain Cristaux Detecteu | Preparation de blocs d'halogenure de terre rare |
| FR2855830B1 (fr) * | 2003-06-05 | 2005-07-08 | Stichting Tech Wetenschapp | Cristaux scintillateurs du type iodure de terre rare |
| US7129494B2 (en) * | 2003-09-24 | 2006-10-31 | Radiation Monitoring Devices, Inc. | Very fast doped LaBr3 scintillators and time-of-flight PET |
| US7329874B2 (en) * | 2003-09-24 | 2008-02-12 | Radiation Monitoring Devices, Inc. | Lu1-xI3:Cex-a scintillator for gamma-ray spectroscopy and time-of-flight pet |
| US7084403B2 (en) * | 2003-10-17 | 2006-08-01 | General Electric Company | Scintillator compositions, and related processes and articles of manufacture |
| FR2869115B1 (fr) * | 2004-04-14 | 2006-05-26 | Saint Gobain Cristaux Detecteu | Materiau scintillateur a base de terre rare a bruit de fond nucleaire reduit |
| US20060018566A1 (en) * | 2004-07-26 | 2006-01-26 | Coleman Christopher R | System and method for adding spatial frequency into an image |
| US7202477B2 (en) * | 2005-03-04 | 2007-04-10 | General Electric Company | Scintillator compositions of cerium halides, and related articles and processes |
| US7767971B2 (en) * | 2005-09-16 | 2010-08-03 | Stichting Voor De Technische Wetenschappen | High light yield fast scintillator |
| US7541589B2 (en) * | 2006-06-30 | 2009-06-02 | General Electric Company | Scintillator compositions based on lanthanide halides, and related methods and articles |
| US7767975B2 (en) * | 2007-12-04 | 2010-08-03 | Saint-Gobain Cristaux Et Detecteurs | Ionizing radiation detector |
| US20090146065A1 (en) * | 2007-12-07 | 2009-06-11 | General Electric Company | Scintillator materials based on lanthanide silicates or lanthanide phosphates, and related methods and articles |
| FR2929296B1 (fr) * | 2008-03-31 | 2011-01-21 | Saint Gobain Cristaux Detecteurs | Recuit de monocristaux |
| US20100224798A1 (en) * | 2008-09-11 | 2010-09-09 | Stichting Voor De Technische Wetenschappen | Scintillator based on lanthanum iodide and lanthanum bromide |
| US20110085957A1 (en) * | 2009-10-09 | 2011-04-14 | Johann-Christoph Von Saldern | Process for producing scintillation materials of low strain birefringence and high refractive index uniformity |
| FR2954760B1 (fr) | 2009-12-28 | 2013-12-27 | Saint Gobain Cristaux Et Detecteurs | Scintillateur en halogenure de terre rare cristallin a face sensible polie |
| US8912498B2 (en) * | 2010-05-10 | 2014-12-16 | University Of Tennessee Research Foundation | Halide scintillator for radiation detection |
| US20120097092A1 (en) * | 2010-10-20 | 2012-04-26 | Meng Zhu | Apparatus for growing single crystals |
| FR2978251B1 (fr) | 2011-07-19 | 2014-04-18 | Saint Gobain Cristaux Et Detecteurs | Detecteur a scintillateur conique |
| FR3004467B1 (fr) | 2013-04-12 | 2016-05-27 | Saint-Gobain Cristaux Et Detecteurs | Fabrication d'une elpasolite stoechiometrique |
| FR3022555B1 (fr) | 2014-06-23 | 2017-12-22 | Saint-Gobain Cristaux Et Detecteurs | Materiau luminescent a couche photonique texturee |
| KR102388637B1 (ko) | 2016-03-04 | 2022-04-19 | 콘티넨탈 테베스 아게 운트 코. 오하게 | 모터사이클의 롤 각도를 결정하는 방법 |
| CN107215887B (zh) * | 2017-06-09 | 2018-05-04 | 厦门中烁光电科技有限公司 | 无水溴化铈的制备方法 |
| CN109988577B (zh) * | 2017-12-27 | 2020-12-25 | 有研稀土新材料股份有限公司 | 稀土卤化物闪烁材料及其应用 |
| EP3737732B1 (fr) | 2018-01-11 | 2022-06-01 | Stichting voor de Technische Wetenschappen | Matériau scintillateur comprenant un halogémure d'alcalino-terreuxcristallin dopé par un activateur et co-dopé par sm2+ |
| CN111186853B (zh) * | 2018-10-26 | 2021-02-09 | 北京梦晖科技有限公司 | 一种稀土卤化物的制备方法 |
| CN118899523A (zh) | 2020-04-14 | 2024-11-05 | 圣戈本陶瓷及塑料股份有限公司 | 电解质材料及其形成方法 |
| KR102856486B1 (ko) | 2020-04-14 | 2025-09-09 | 세인트-고바인 세라믹스 앤드 플라스틱스, 인크. | 이온 전도성 재료, 이온 전도성 재료를 포함하는 전해질 및 형성 방법 |
| US11978849B2 (en) | 2020-08-07 | 2024-05-07 | Saint-Gobain Ceramics & Plastics, Inc. | Electrolyte material and methods of forming |
| FR3114104A1 (fr) | 2020-09-15 | 2022-03-18 | Saint-Gobain Cristaux Et Detecteurs | Matériau scintillateur comprenant une pérovskite d’halogénure dopée |
| RU2762083C1 (ru) * | 2021-02-01 | 2021-12-15 | Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" | Способ получения кристаллического сцинтиллятора на основе самоактивированного редкоземельного галогенида |
| US11848414B2 (en) | 2021-05-17 | 2023-12-19 | Saint-Gobain Ceramics & Plastics, Inc. | Electrolyte material and methods of forming |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3959442A (en) * | 1974-03-07 | 1976-05-25 | Hughes Aircraft Company | Preparing single crystals of Li(Ho,Y,Er,Tm,Dy)F4 in HF atmosphere |
| US4251315A (en) * | 1976-11-19 | 1981-02-17 | Hughes Aircraft Company | Method of growing metal halide and chalcogenide crystals for use as infrared windows |
| JPH03285898A (ja) * | 1990-04-02 | 1991-12-17 | Nikko Kyodo Co Ltd | フッ化イットリウムリチウム系単結晶の製造方法 |
| US5478498A (en) * | 1993-12-03 | 1995-12-26 | Tosoh Corporation | Disordered fluorite-type photochemical hole burning crystal containing SM2+ as active ions |
| JPH07157395A (ja) * | 1993-12-03 | 1995-06-20 | Tosoh Corp | 光化学ホールバーニング結晶及びその製造法 |
| US5911824A (en) * | 1997-12-16 | 1999-06-15 | Saint-Gobain Industrial Ceramics, Inc. | Method for growing crystal |
| NL1014401C2 (nl) * | 2000-02-17 | 2001-09-04 | Stichting Tech Wetenschapp | Ceriumhoudend anorganisch scintillatormateriaal. |
| FR2847594B1 (fr) * | 2002-11-27 | 2004-12-24 | Saint Gobain Cristaux Detecteu | Preparation de blocs d'halogenure de terre rare |
-
2002
- 2002-06-12 FR FR0207187A patent/FR2840926B1/fr not_active Expired - Lifetime
-
2003
- 2003-06-11 AT AT03760004T patent/ATE350518T1/de active
- 2003-06-11 CA CA002489234A patent/CA2489234A1/fr not_active Abandoned
- 2003-06-11 DE DE60310932T patent/DE60310932T2/de not_active Expired - Lifetime
- 2003-06-11 US US10/515,349 patent/US7332028B2/en not_active Expired - Lifetime
- 2003-06-11 RU RU2005100043/15A patent/RU2324021C2/ru not_active IP Right Cessation
- 2003-06-11 JP JP2004513543A patent/JP4584710B2/ja not_active Expired - Lifetime
- 2003-06-11 WO PCT/FR2003/001735 patent/WO2003106741A2/fr not_active Ceased
- 2003-06-11 PL PL371976A patent/PL206640B1/pl unknown
- 2003-06-11 EP EP03760004A patent/EP1516078B1/fr not_active Expired - Lifetime
- 2003-06-11 AU AU2003255657A patent/AU2003255657B2/en not_active Expired - Fee Related
- 2003-06-11 IL IL16534503A patent/IL165345A0/xx active IP Right Grant
- 2003-06-11 CN CNB038136597A patent/CN1311106C/zh not_active Expired - Lifetime
- 2003-11-06 UA UAA200500248A patent/UA81766C2/uk unknown
-
2004
- 2004-11-23 IL IL165345A patent/IL165345A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE60310932D1 (de) | 2007-02-15 |
| RU2005100043A (ru) | 2005-06-10 |
| RU2324021C2 (ru) | 2008-05-10 |
| IL165345A (en) | 2007-10-31 |
| EP1516078A2 (fr) | 2005-03-23 |
| FR2840926A1 (fr) | 2003-12-19 |
| FR2840926B1 (fr) | 2005-03-04 |
| CN1311106C (zh) | 2007-04-18 |
| WO2003106741A2 (fr) | 2003-12-24 |
| UA81766C2 (uk) | 2008-02-11 |
| WO2003106741A3 (fr) | 2004-04-15 |
| DE60310932T2 (de) | 2007-10-11 |
| PL371976A1 (en) | 2005-07-11 |
| US7332028B2 (en) | 2008-02-19 |
| IL165345A0 (en) | 2006-01-15 |
| ATE350518T1 (de) | 2007-01-15 |
| PL206640B1 (pl) | 2010-09-30 |
| US20050188914A1 (en) | 2005-09-01 |
| CA2489234A1 (fr) | 2003-12-24 |
| AU2003255657B2 (en) | 2009-07-02 |
| CN1659318A (zh) | 2005-08-24 |
| JP2005529058A (ja) | 2005-09-29 |
| EP1516078B1 (fr) | 2007-01-03 |
| AU2003255657A1 (en) | 2003-12-31 |
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