AU2003235599B2 - Adaptive threshold voltage control with positive body bias for n and p-channel transistors - Google Patents

Adaptive threshold voltage control with positive body bias for n and p-channel transistors Download PDF

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Publication number
AU2003235599B2
AU2003235599B2 AU2003235599A AU2003235599A AU2003235599B2 AU 2003235599 B2 AU2003235599 B2 AU 2003235599B2 AU 2003235599 A AU2003235599 A AU 2003235599A AU 2003235599 A AU2003235599 A AU 2003235599A AU 2003235599 B2 AU2003235599 B2 AU 2003235599B2
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AU
Australia
Prior art keywords
transistor
voltage
source
output
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2003235599A
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English (en)
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AU2003235599A1 (en
Inventor
David E. Fulkerson
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Honeywell International Inc
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Honeywell International Inc
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Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of AU2003235599A1 publication Critical patent/AU2003235599A1/en
Application granted granted Critical
Publication of AU2003235599B2 publication Critical patent/AU2003235599B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Amplifiers (AREA)
AU2003235599A 2002-01-15 2003-01-15 Adaptive threshold voltage control with positive body bias for n and p-channel transistors Ceased AU2003235599B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/050,469 US6731157B2 (en) 2002-01-15 2002-01-15 Adaptive threshold voltage control with positive body bias for N and P-channel transistors
US10/050,469 2002-01-15
PCT/US2003/001212 WO2003060996A2 (en) 2002-01-15 2003-01-15 Adaptive threshold voltage control with positive body bias for n and p-channel transistors

Publications (2)

Publication Number Publication Date
AU2003235599A1 AU2003235599A1 (en) 2003-07-30
AU2003235599B2 true AU2003235599B2 (en) 2005-10-27

Family

ID=21965418

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003235599A Ceased AU2003235599B2 (en) 2002-01-15 2003-01-15 Adaptive threshold voltage control with positive body bias for n and p-channel transistors

Country Status (8)

Country Link
US (1) US6731157B2 (enExample)
EP (1) EP1468447B1 (enExample)
JP (1) JP4555572B2 (enExample)
CN (1) CN100470765C (enExample)
AU (1) AU2003235599B2 (enExample)
CA (1) CA2473734A1 (enExample)
DE (1) DE60336207D1 (enExample)
WO (1) WO2003060996A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180322B1 (en) 2002-04-16 2007-02-20 Transmeta Corporation Closed loop feedback control of integrated circuits
US7205758B1 (en) * 2004-02-02 2007-04-17 Transmeta Corporation Systems and methods for adjusting threshold voltage
US7949864B1 (en) 2002-12-31 2011-05-24 Vjekoslav Svilan Balanced adaptive body bias control
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7859062B1 (en) 2004-02-02 2010-12-28 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7816742B1 (en) 2004-09-30 2010-10-19 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7509504B1 (en) 2004-09-30 2009-03-24 Transmeta Corporation Systems and methods for control of integrated circuits comprising body biasing systems
US7994846B2 (en) * 2009-05-14 2011-08-09 International Business Machines Corporation Method and mechanism to reduce current variation in a current reference branch circuit
DE102009036623B4 (de) * 2009-08-07 2011-05-12 Siemens Aktiengesellschaft Triggerschaltung und Gleichrichter, insbesondere für ein einen piezoelektrischen Mikrogenerator aufweisendes, energieautarkes Mikrosystem
US7825693B1 (en) 2009-08-31 2010-11-02 International Business Machines Corporation Reduced duty cycle distortion using controlled body device
US10833582B1 (en) 2020-03-02 2020-11-10 Semiconductor Components Industries, Llc Methods and systems of power management for an integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
EP1081573A1 (en) * 1999-08-31 2001-03-07 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228360A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体集積回路
US5216385A (en) * 1991-12-31 1993-06-01 Intel Corporation Resistorless trim amplifier using MOS devices for feedback elements
US5329184A (en) * 1992-11-05 1994-07-12 National Semiconductor Corporation Method and apparatus for feedback control of I/O characteristics of digital interface circuits
US5394934A (en) 1994-04-15 1995-03-07 American Standard Inc. Indoor air quality sensor and method
US5539351A (en) * 1994-11-03 1996-07-23 Gilsdorf; Ben Circuit and method for reducing a gate volage of a transmission gate within a charge pump circuit
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
JP3475237B2 (ja) * 2000-07-24 2003-12-08 東京大学長 電力制御装置及び方法並びに電力制御プログラムを記録した記録媒体
JP3537431B2 (ja) * 2003-03-10 2004-06-14 株式会社東芝 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
EP1081573A1 (en) * 1999-08-31 2001-03-07 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers

Also Published As

Publication number Publication date
EP1468447B1 (en) 2011-03-02
AU2003235599A1 (en) 2003-07-30
CN100470765C (zh) 2009-03-18
JP2005515636A (ja) 2005-05-26
WO2003060996A3 (en) 2003-10-16
US6731157B2 (en) 2004-05-04
CA2473734A1 (en) 2003-07-24
DE60336207D1 (de) 2011-04-14
CN1643680A (zh) 2005-07-20
WO2003060996A2 (en) 2003-07-24
JP4555572B2 (ja) 2010-10-06
EP1468447A2 (en) 2004-10-20
US20030132735A1 (en) 2003-07-17

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MK14 Patent ceased section 143(a) (annual fees not paid) or expired