DE60336207D1 - Adaptive schwellwertspannungssteuerung mit substra - Google Patents

Adaptive schwellwertspannungssteuerung mit substra

Info

Publication number
DE60336207D1
DE60336207D1 DE60336207T DE60336207T DE60336207D1 DE 60336207 D1 DE60336207 D1 DE 60336207D1 DE 60336207 T DE60336207 T DE 60336207T DE 60336207 T DE60336207 T DE 60336207T DE 60336207 D1 DE60336207 D1 DE 60336207D1
Authority
DE
Germany
Prior art keywords
substra
threshold voltage
voltage control
adaptive threshold
adaptive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336207T
Other languages
German (de)
English (en)
Inventor
David E Fulkerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Application granted granted Critical
Publication of DE60336207D1 publication Critical patent/DE60336207D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)
DE60336207T 2002-01-15 2003-01-15 Adaptive schwellwertspannungssteuerung mit substra Expired - Lifetime DE60336207D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/050,469 US6731157B2 (en) 2002-01-15 2002-01-15 Adaptive threshold voltage control with positive body bias for N and P-channel transistors
PCT/US2003/001212 WO2003060996A2 (en) 2002-01-15 2003-01-15 Adaptive threshold voltage control with positive body bias for n and p-channel transistors

Publications (1)

Publication Number Publication Date
DE60336207D1 true DE60336207D1 (de) 2011-04-14

Family

ID=21965418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336207T Expired - Lifetime DE60336207D1 (de) 2002-01-15 2003-01-15 Adaptive schwellwertspannungssteuerung mit substra

Country Status (8)

Country Link
US (1) US6731157B2 (enExample)
EP (1) EP1468447B1 (enExample)
JP (1) JP4555572B2 (enExample)
CN (1) CN100470765C (enExample)
AU (1) AU2003235599B2 (enExample)
CA (1) CA2473734A1 (enExample)
DE (1) DE60336207D1 (enExample)
WO (1) WO2003060996A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
US7949864B1 (en) 2002-12-31 2011-05-24 Vjekoslav Svilan Balanced adaptive body bias control
US7205758B1 (en) 2004-02-02 2007-04-17 Transmeta Corporation Systems and methods for adjusting threshold voltage
US7649402B1 (en) 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
US7859062B1 (en) 2004-02-02 2010-12-28 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7816742B1 (en) * 2004-09-30 2010-10-19 Koniaris Kleanthes G Systems and methods for integrated circuits comprising multiple body biasing domains
US7509504B1 (en) * 2004-09-30 2009-03-24 Transmeta Corporation Systems and methods for control of integrated circuits comprising body biasing systems
US7994846B2 (en) * 2009-05-14 2011-08-09 International Business Machines Corporation Method and mechanism to reduce current variation in a current reference branch circuit
DE102009036623B4 (de) * 2009-08-07 2011-05-12 Siemens Aktiengesellschaft Triggerschaltung und Gleichrichter, insbesondere für ein einen piezoelektrischen Mikrogenerator aufweisendes, energieautarkes Mikrosystem
US7825693B1 (en) 2009-08-31 2010-11-02 International Business Machines Corporation Reduced duty cycle distortion using controlled body device
US10833582B1 (en) 2020-03-02 2020-11-10 Semiconductor Components Industries, Llc Methods and systems of power management for an integrated circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03228360A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体集積回路
US5216385A (en) * 1991-12-31 1993-06-01 Intel Corporation Resistorless trim amplifier using MOS devices for feedback elements
US5329184A (en) * 1992-11-05 1994-07-12 National Semiconductor Corporation Method and apparatus for feedback control of I/O characteristics of digital interface circuits
US5397934A (en) * 1993-04-05 1995-03-14 National Semiconductor Corporation Apparatus and method for adjusting the threshold voltage of MOS transistors
US5394934A (en) 1994-04-15 1995-03-07 American Standard Inc. Indoor air quality sensor and method
US5539351A (en) * 1994-11-03 1996-07-23 Gilsdorf; Ben Circuit and method for reducing a gate volage of a transmission gate within a charge pump circuit
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
DE69906725D1 (de) 1999-08-31 2003-05-15 St Microelectronics Srl Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker
TW501278B (en) * 2000-06-12 2002-09-01 Intel Corp Apparatus and circuit having reduced leakage current and method therefor
JP3475237B2 (ja) * 2000-07-24 2003-12-08 東京大学長 電力制御装置及び方法並びに電力制御プログラムを記録した記録媒体
JP3537431B2 (ja) * 2003-03-10 2004-06-14 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JP2005515636A (ja) 2005-05-26
US20030132735A1 (en) 2003-07-17
AU2003235599A1 (en) 2003-07-30
CN100470765C (zh) 2009-03-18
EP1468447B1 (en) 2011-03-02
US6731157B2 (en) 2004-05-04
WO2003060996A2 (en) 2003-07-24
CN1643680A (zh) 2005-07-20
WO2003060996A3 (en) 2003-10-16
JP4555572B2 (ja) 2010-10-06
AU2003235599B2 (en) 2005-10-27
CA2473734A1 (en) 2003-07-24
EP1468447A2 (en) 2004-10-20

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