EP1579494A4 - LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT - Google Patents
LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENTInfo
- Publication number
- EP1579494A4 EP1579494A4 EP03814158A EP03814158A EP1579494A4 EP 1579494 A4 EP1579494 A4 EP 1579494A4 EP 03814158 A EP03814158 A EP 03814158A EP 03814158 A EP03814158 A EP 03814158A EP 1579494 A4 EP1579494 A4 EP 1579494A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- logic switching
- channel pullup
- pullup element
- channel
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US324485 | 2002-12-20 | ||
| US10/324,485 US7005711B2 (en) | 2002-12-20 | 2002-12-20 | N-channel pull-up element and logic circuit |
| PCT/US2003/040360 WO2004059719A1 (en) | 2002-12-20 | 2003-12-19 | N-channel pull-up element & logic circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1579494A1 EP1579494A1 (en) | 2005-09-28 |
| EP1579494A4 true EP1579494A4 (en) | 2006-03-08 |
Family
ID=32593440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP03814158A Withdrawn EP1579494A4 (en) | 2002-12-20 | 2003-12-19 | LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7005711B2 (en) |
| EP (1) | EP1579494A4 (en) |
| JP (1) | JP2006512005A (en) |
| KR (1) | KR20050084430A (en) |
| CN (1) | CN1726588A (en) |
| AU (1) | AU2003303434A1 (en) |
| WO (1) | WO2004059719A1 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9076665B2 (en) * | 2006-12-06 | 2015-07-07 | Yale University | CMOS-compatible silicon nano-wire sensors with biochemical and cellular interfaces |
| US9188594B2 (en) | 2006-12-06 | 2015-11-17 | Yale University | Nanoelectronic-enzyme linked immunosorbent assay system and method |
| WO2008114379A1 (en) * | 2007-03-19 | 2008-09-25 | Fujitsu Limited | Inverter circuit and balanced input inverter circuit |
| CN101453157B (en) * | 2007-11-30 | 2012-12-19 | 成都芯源系统有限公司 | High-side power MOSFET switch tube group with reverse current blocking function |
| US8294137B2 (en) * | 2009-01-02 | 2012-10-23 | Faquir Chand Jain | Twin-drain spatial wavefunction switched field-effect transistors |
| KR101549286B1 (en) | 2008-07-25 | 2015-09-01 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | Complementary logical gate device |
| US8605466B2 (en) * | 2009-12-28 | 2013-12-10 | Steven E. Summer | Radiation hardened motor drive stage |
| KR101863199B1 (en) * | 2011-02-10 | 2018-07-02 | 삼성디스플레이 주식회사 | Inverter and Scan Driver Using the same |
| TWI568181B (en) * | 2011-05-06 | 2017-01-21 | 半導體能源研究所股份有限公司 | Logic circuit and semiconductor device |
| KR101383510B1 (en) * | 2011-12-07 | 2014-04-08 | 경희대학교 산학협력단 | Bias circuit for SOI logic circuit |
| US9316612B2 (en) | 2013-01-04 | 2016-04-19 | Yale University | Regenerative nanosensor devices |
| FI20150294A (en) * | 2015-10-23 | 2017-04-24 | Ari Paasio | Lågeffektslogikfamilj |
| US9614529B1 (en) * | 2016-02-01 | 2017-04-04 | Qualcomm Incorporated | Input/output (I/O) driver implementing dynamic gate biasing of buffer transistors |
| FI20160183A7 (en) * | 2016-07-14 | 2016-07-15 | Artto Mikael Aurola | Improved semiconductor configuration |
| CN107222204B (en) * | 2017-04-20 | 2020-07-24 | 宁波大学 | Current Mode RM NOR Non-Exclusive OR Unit Circuit Based on FinFET Transistors |
| CN107666313B (en) * | 2017-08-16 | 2021-03-09 | 宁波大学 | Method for realizing appointed logic function by CMOS circuit |
| CN117581480A (en) * | 2021-10-09 | 2024-02-20 | 华为技术有限公司 | Logic gates, latches and flip-flops |
Citations (2)
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|---|---|---|---|---|
| US5537076A (en) * | 1993-05-25 | 1996-07-16 | Nec Corporation | Negative resistance circuit and inverter circuit including the same |
| US20020066933A1 (en) * | 2000-06-22 | 2002-06-06 | King Tsu-Jae | Negative differential resistance field effect transistor (NDR-FET) & circuits using the same |
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-
2002
- 2002-12-20 US US10/324,485 patent/US7005711B2/en not_active Expired - Lifetime
-
2003
- 2003-12-19 AU AU2003303434A patent/AU2003303434A1/en not_active Abandoned
- 2003-12-19 WO PCT/US2003/040360 patent/WO2004059719A1/en not_active Ceased
- 2003-12-19 EP EP03814158A patent/EP1579494A4/en not_active Withdrawn
- 2003-12-19 CN CNA2003801065520A patent/CN1726588A/en active Pending
- 2003-12-19 KR KR1020057011482A patent/KR20050084430A/en not_active Abandoned
- 2003-12-19 JP JP2004563756A patent/JP2006512005A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5537076A (en) * | 1993-05-25 | 1996-07-16 | Nec Corporation | Negative resistance circuit and inverter circuit including the same |
| US20020066933A1 (en) * | 2000-06-22 | 2002-06-06 | King Tsu-Jae | Negative differential resistance field effect transistor (NDR-FET) & circuits using the same |
Non-Patent Citations (1)
| Title |
|---|
| See also references of WO2004059719A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050084430A (en) | 2005-08-26 |
| JP2006512005A (en) | 2006-04-06 |
| US20040119114A1 (en) | 2004-06-24 |
| AU2003303434A1 (en) | 2004-07-22 |
| US7005711B2 (en) | 2006-02-28 |
| WO2004059719A1 (en) | 2004-07-15 |
| EP1579494A1 (en) | 2005-09-28 |
| CN1726588A (en) | 2006-01-25 |
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