EP1579494A4 - LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT - Google Patents

LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT

Info

Publication number
EP1579494A4
EP1579494A4 EP03814158A EP03814158A EP1579494A4 EP 1579494 A4 EP1579494 A4 EP 1579494A4 EP 03814158 A EP03814158 A EP 03814158A EP 03814158 A EP03814158 A EP 03814158A EP 1579494 A4 EP1579494 A4 EP 1579494A4
Authority
EP
European Patent Office
Prior art keywords
logic switching
channel pullup
pullup element
channel
logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03814158A
Other languages
German (de)
French (fr)
Other versions
EP1579494A1 (en
Inventor
Tsu-Jae King
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Progressant Technologies Inc
Original Assignee
Progressant Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Progressant Technologies Inc filed Critical Progressant Technologies Inc
Publication of EP1579494A1 publication Critical patent/EP1579494A1/en
Publication of EP1579494A4 publication Critical patent/EP1579494A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP03814158A 2002-12-20 2003-12-19 LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT Withdrawn EP1579494A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US324485 2002-12-20
US10/324,485 US7005711B2 (en) 2002-12-20 2002-12-20 N-channel pull-up element and logic circuit
PCT/US2003/040360 WO2004059719A1 (en) 2002-12-20 2003-12-19 N-channel pull-up element & logic circuit

Publications (2)

Publication Number Publication Date
EP1579494A1 EP1579494A1 (en) 2005-09-28
EP1579494A4 true EP1579494A4 (en) 2006-03-08

Family

ID=32593440

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03814158A Withdrawn EP1579494A4 (en) 2002-12-20 2003-12-19 LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT

Country Status (7)

Country Link
US (1) US7005711B2 (en)
EP (1) EP1579494A4 (en)
JP (1) JP2006512005A (en)
KR (1) KR20050084430A (en)
CN (1) CN1726588A (en)
AU (1) AU2003303434A1 (en)
WO (1) WO2004059719A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9076665B2 (en) * 2006-12-06 2015-07-07 Yale University CMOS-compatible silicon nano-wire sensors with biochemical and cellular interfaces
US9188594B2 (en) 2006-12-06 2015-11-17 Yale University Nanoelectronic-enzyme linked immunosorbent assay system and method
WO2008114379A1 (en) * 2007-03-19 2008-09-25 Fujitsu Limited Inverter circuit and balanced input inverter circuit
CN101453157B (en) * 2007-11-30 2012-12-19 成都芯源系统有限公司 High-side power MOSFET switch tube group with reverse current blocking function
US8294137B2 (en) * 2009-01-02 2012-10-23 Faquir Chand Jain Twin-drain spatial wavefunction switched field-effect transistors
KR101549286B1 (en) 2008-07-25 2015-09-01 고쿠리츠다이가쿠호진 도호쿠다이가쿠 Complementary logical gate device
US8605466B2 (en) * 2009-12-28 2013-12-10 Steven E. Summer Radiation hardened motor drive stage
KR101863199B1 (en) * 2011-02-10 2018-07-02 삼성디스플레이 주식회사 Inverter and Scan Driver Using the same
TWI568181B (en) * 2011-05-06 2017-01-21 半導體能源研究所股份有限公司 Logic circuit and semiconductor device
KR101383510B1 (en) * 2011-12-07 2014-04-08 경희대학교 산학협력단 Bias circuit for SOI logic circuit
US9316612B2 (en) 2013-01-04 2016-04-19 Yale University Regenerative nanosensor devices
FI20150294A (en) * 2015-10-23 2017-04-24 Ari Paasio Lågeffektslogikfamilj
US9614529B1 (en) * 2016-02-01 2017-04-04 Qualcomm Incorporated Input/output (I/O) driver implementing dynamic gate biasing of buffer transistors
FI20160183A7 (en) * 2016-07-14 2016-07-15 Artto Mikael Aurola Improved semiconductor configuration
CN107222204B (en) * 2017-04-20 2020-07-24 宁波大学 Current Mode RM NOR Non-Exclusive OR Unit Circuit Based on FinFET Transistors
CN107666313B (en) * 2017-08-16 2021-03-09 宁波大学 Method for realizing appointed logic function by CMOS circuit
CN117581480A (en) * 2021-10-09 2024-02-20 华为技术有限公司 Logic gates, latches and flip-flops

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537076A (en) * 1993-05-25 1996-07-16 Nec Corporation Negative resistance circuit and inverter circuit including the same
US20020066933A1 (en) * 2000-06-22 2002-06-06 King Tsu-Jae Negative differential resistance field effect transistor (NDR-FET) & circuits using the same

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588736A (en) * 1969-06-30 1971-06-28 Ibm Three-terminal bulk negative resistance device operable in oscillatory and bistable modes
US3903542A (en) * 1974-03-11 1975-09-02 Westinghouse Electric Corp Surface gate-induced conductivity modulated negative resistance semiconductor device
US3974486A (en) * 1975-04-07 1976-08-10 International Business Machines Corporation Multiplication mode bistable field effect transistor and memory utilizing same
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4142176A (en) * 1976-09-27 1979-02-27 Mostek Corporation Series read only memory structure
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
JPS593964A (en) * 1982-06-29 1984-01-10 Semiconductor Res Found semiconductor integrated circuit
FR2600821B1 (en) * 1986-06-30 1988-12-30 Thomson Csf HETEROJUNCTION AND DUAL CHANNEL SEMICONDUCTOR DEVICE, ITS APPLICATION TO A FIELD EFFECT TRANSISTOR, AND ITS APPLICATION TO A NEGATIVE TRANSDUCTANCE DEVICE
US4945393A (en) * 1988-06-21 1990-07-31 At&T Bell Laboratories Floating gate memory circuit and apparatus
JP2588590B2 (en) * 1988-07-20 1997-03-05 富士通株式会社 Semiconductor storage device
WO1990003646A1 (en) 1988-09-30 1990-04-05 Dallas Semiconductor Corporation Integrated circuit with compact load elements
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
EP0380168B1 (en) * 1989-01-24 1995-04-26 Laboratoires D'electronique Philips Integrated semiconductor device comprising a field-effect transistor with an isolated gate biased at a high level
US5032891A (en) * 1989-05-17 1991-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
US5162880A (en) * 1989-09-27 1992-11-10 Kabushiki Kaisha Toshiba Nonvolatile memory cell having gate insulation film with carrier traps therein
JPH03245504A (en) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd Magnet for critical magnetic field measuring device
US5093699A (en) * 1990-03-12 1992-03-03 Texas A & M University System Gate adjusted resonant tunnel diode device and method of manufacture
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
KR100198659B1 (en) * 1996-05-16 1999-06-15 구본준 Memory Cells, Memory Devices, and Manufacturing Methods Thereof
JP2773474B2 (en) 1991-08-06 1998-07-09 日本電気株式会社 Semiconductor device
US5357134A (en) * 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
DE69202554T2 (en) * 1991-12-25 1995-10-19 Nippon Electric Co Tunnel transistor and its manufacturing process.
US5463234A (en) * 1992-03-31 1995-10-31 Kabushiki Kaisha Toshiba High-speed semiconductor gain memory cell with minimal area occupancy
JPH0637302A (en) * 1992-07-14 1994-02-10 Mitsuteru Kimura Tunnel transistor
JPH0661454A (en) * 1992-08-10 1994-03-04 Hitachi Ltd Semiconductor integrated circuit device
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory
JP3613594B2 (en) 1993-08-19 2005-01-26 株式会社ルネサステクノロジ Semiconductor element and semiconductor memory device using the same
KR970009276B1 (en) * 1993-10-28 1997-06-09 금성일렉트론 주식회사 Method for manufacturing moset
US5606177A (en) * 1993-10-29 1997-02-25 Texas Instruments Incorporated Silicon oxide resonant tunneling diode structure
DE69316628T2 (en) * 1993-11-29 1998-05-07 Sgs Thomson Microelectronics Volatile memory cell
US5448513A (en) * 1993-12-02 1995-09-05 Regents Of The University Of California Capacitorless DRAM device on silicon-on-insulator substrate
US5442194A (en) * 1994-01-07 1995-08-15 Texas Instruments Incorporated Room-temperature tunneling hot-electron transistor
US5477169A (en) * 1994-06-20 1995-12-19 Motorola Logic circuit with negative differential resistance device
JP2581455B2 (en) 1994-06-27 1997-02-12 日本電気株式会社 Negative differential resistance FET
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US5654558A (en) * 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
JP3322492B2 (en) * 1994-11-28 2002-09-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US5773328A (en) 1995-02-28 1998-06-30 Sgs-Thomson Microelectronics, Inc. Method of making a fully-dielectric-isolated fet
JP3922466B2 (en) * 1995-03-08 2007-05-30 株式会社ルネサステクノロジ Semiconductor logic element
US5773996A (en) * 1995-05-22 1998-06-30 Nippon Telegraph And Telephone Corporation Multiple-valued logic circuit
JPH0922951A (en) 1995-06-07 1997-01-21 Sgs Thomson Microelectron Inc Zero-power SRAM with patterned buried oxide isolation
JP3397516B2 (en) * 1995-06-08 2003-04-14 三菱電機株式会社 Semiconductor storage device and semiconductor integrated circuit device
US5629546A (en) * 1995-06-21 1997-05-13 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell
US5698997A (en) * 1995-09-28 1997-12-16 Mayo Foundation For Medical Education And Research Resonant tunneling diode structures for functionally complete low power logic
DE19600422C1 (en) * 1996-01-08 1997-08-21 Siemens Ag Electrically programmable memory cell arrangement and method for its production
US5888852A (en) * 1996-03-01 1999-03-30 Matsushita Electric Industrial Co., Ltd. Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method
US5936265A (en) * 1996-03-25 1999-08-10 Kabushiki Kaisha Toshiba Semiconductor device including a tunnel effect element
JP3508809B2 (en) * 1996-04-04 2004-03-22 日本電信電話株式会社 Waveform generation circuit
KR100215866B1 (en) * 1996-04-12 1999-08-16 구본준 DRAM without capacitor and manufacturing method thereof
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
GB2316533B (en) * 1996-08-16 1999-05-26 Toshiba Cambridge Res Center Semiconductor device
US6091077A (en) * 1996-10-22 2000-07-18 Matsushita Electric Industrial Co., Ltd. MIS SOI semiconductor device with RTD and/or HET
KR19980034078A (en) * 1996-11-05 1998-08-05 양승택 Hot Electron Device and Resonant Tunneling Hot Electronic Device
US5757051A (en) * 1996-11-12 1998-05-26 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell
US5761114A (en) * 1997-02-19 1998-06-02 International Business Machines Corporation Multi-level storage gain cell with stepline
US5732014A (en) * 1997-02-20 1998-03-24 Micron Technology, Inc. Merged transistor structure for gain memory cell
US6130559A (en) * 1997-04-04 2000-10-10 Board Of Regents Of The University Of Texas System QMOS digital logic circuits
US5903170A (en) * 1997-06-03 1999-05-11 The Regents Of The University Of Michigan Digital logic design using negative differential resistance diodes and field-effect transistors
US5883549A (en) * 1997-06-20 1999-03-16 Hughes Electronics Corporation Bipolar junction transistor (BJT)--resonant tunneling diode (RTD) oscillator circuit and method
US5869845A (en) * 1997-06-26 1999-02-09 Texas Instruments Incorporated Resonant tunneling memory
US5883829A (en) * 1997-06-27 1999-03-16 Texas Instruments Incorporated Memory cell having negative differential resistance devices
DE19727466C2 (en) * 1997-06-27 2001-12-20 Infineon Technologies Ag DRAM cell arrangement and method for its production
US5895934A (en) * 1997-08-13 1999-04-20 The United States Of America As Represented By The Secretary Of The Army Negative differential resistance device based on tunneling through microclusters, and method therefor
TW396628B (en) * 1997-09-04 2000-07-01 Nat Science Council Structure and process for SiC single crystal/Si single crystal hetero-junction negative differential resistance
US6015739A (en) * 1997-10-29 2000-01-18 Advanced Micro Devices Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant
US6232643B1 (en) * 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
JP4213776B2 (en) * 1997-11-28 2009-01-21 光照 木村 MOS gate Schottky tunnel transistor and integrated circuit using the same
US6104631A (en) * 1997-12-17 2000-08-15 National Scientific Corp. Static memory cell with load circuit using a tunnel diode
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
US6303942B1 (en) * 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6150242A (en) * 1998-03-25 2000-11-21 Texas Instruments Incorporated Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6128216A (en) * 1998-05-13 2000-10-03 Micron Technology Inc. High density planar SRAM cell with merged transistors
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
DE19843959B4 (en) * 1998-09-24 2004-02-12 Infineon Technologies Ag Method for producing a semiconductor component with a blocking pn junction
JP2000182387A (en) * 1998-12-14 2000-06-30 Global Alliance Kk Non-volatile memory
EP1142124B1 (en) 1999-01-06 2006-05-24 Raytheon Company Method and system for quantizing an analog signal utilizing a clocked resonant tunneling diode pair
JP2000208647A (en) * 1999-01-12 2000-07-28 Internatl Business Mach Corp <Ibm> EEPROM memory cell and method of manufacturing the same
JP3475851B2 (en) 1999-04-28 2003-12-10 日本電気株式会社 Flip-flop circuit
JP3420972B2 (en) 1999-06-29 2003-06-30 株式会社東芝 Semiconductor device
US6366134B1 (en) 1999-09-16 2002-04-02 Texas Instruments Incorporated CMOS dynamic logic circuitry using quantum mechanical tunneling structures
EP1107317B1 (en) 1999-12-09 2007-07-25 Hitachi Europe Limited Memory device
EP1111620A3 (en) * 1999-12-22 2003-01-08 National University of Ireland, Cork A negative resistance device
US20020096723A1 (en) * 1999-12-31 2002-07-25 Kaoru Awaka Transient frequency in dynamic threshold metal-oxide-semiconductor field effect transistors
US6440805B1 (en) 2000-02-29 2002-08-27 Mototrola, Inc. Method of forming a semiconductor device with isolation and well regions
US6690030B2 (en) * 2000-03-06 2004-02-10 Kabushiki Kaisha Toshiba Semiconductor device with negative differential resistance characteristics
US6320784B1 (en) 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US6348394B1 (en) 2000-05-18 2002-02-19 International Business Machines Corporation Method and device for array threshold voltage control by trapped charge in trench isolation
US6294412B1 (en) * 2000-06-09 2001-09-25 Advanced Micro Devices Silicon based lateral tunneling memory cell
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6596617B1 (en) * 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6594193B2 (en) * 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6518589B2 (en) * 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
GB2364823A (en) * 2000-07-12 2002-02-06 Seiko Epson Corp TFT memory device having gate insulator with charge-trapping granules
US6465306B1 (en) * 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
US6552398B2 (en) * 2001-01-16 2003-04-22 Ibm Corporation T-Ram array having a planar cell structure and method for fabricating the same
US6713791B2 (en) * 2001-01-26 2004-03-30 Ibm Corporation T-RAM array having a planar cell structure and method for fabricating the same
JP4044293B2 (en) * 2001-02-13 2008-02-06 株式会社東芝 Semiconductor device and manufacturing method thereof
US6396731B1 (en) * 2001-03-30 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd SRAM cell employing tunnel switched diode
US6424174B1 (en) * 2001-10-17 2002-07-23 International Business Machines Corporation Low leakage logic gates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537076A (en) * 1993-05-25 1996-07-16 Nec Corporation Negative resistance circuit and inverter circuit including the same
US20020066933A1 (en) * 2000-06-22 2002-06-06 King Tsu-Jae Negative differential resistance field effect transistor (NDR-FET) & circuits using the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004059719A1 *

Also Published As

Publication number Publication date
KR20050084430A (en) 2005-08-26
JP2006512005A (en) 2006-04-06
US20040119114A1 (en) 2004-06-24
AU2003303434A1 (en) 2004-07-22
US7005711B2 (en) 2006-02-28
WO2004059719A1 (en) 2004-07-15
EP1579494A1 (en) 2005-09-28
CN1726588A (en) 2006-01-25

Similar Documents

Publication Publication Date Title
DE102004025875B8 (en) Function block with Boolean logic
EP1579494A4 (en) LOGIC SWITCHING WITH N-CHANNEL PULLUP ELEMENT
EP1567871A4 (en) SONDENSTATION WITH LOW INDUCTIVITY PATH
EP1706546A4 (en) SPUNDWANDPLATTEN WITH LONG CAVITIES
ATE431059T1 (en) EXTENDED UP-ROUTE OPERATION WITH SOFT HANDOVER
DE60226865D1 (en) Thermoplastic Elastomer Composition
DE60329959D1 (en) Elastomer with functional groups
DE60317282D1 (en) Polyester resin composition
ATE456592T1 (en) MODIFIED POLYMERIC FLOCLCULANTS WITH IMPROVED PERFORMANCE CHARACTERISTICS
DE602004023860D1 (en) KULIERSTRICK OR ORIGINAL MACHINE WITH MOVABLE FADENFÜHRUNGSSTIED
DE502004011333D1 (en) POLYALKENAMINES WITH IMPROVED APPLICATION CHARACTERISTICS
DE602004025762D1 (en) Buffer circuit with controlled rise time
DE60306911D1 (en) SPALTOVEN WITH EVEN HEATING
DE602004019930D1 (en) FLAME-PROTECTED THERMOPLASTIC RESIN COMPOSITION
DE602004014280D1 (en) FLAME-PROTECTED THERMOPLASTIC RESIN COMPOSITION
DE602004031967D1 (en) diverter valve
DE602004027214D1 (en) SWITCHING ELEMENT
DE502005008977D1 (en) ELECTRIC TOOL WITH DOUBLE SWITCH
DE50209556D1 (en) GATE WITH FUSE DEVICE
DE60326176D1 (en) Thermoplastic elastomer composition with moderate hardening state
DE60216283D1 (en) Thermoplastic Elastomer Composition
DE60216230D1 (en) Drawer-type switch
DE602004013198D1 (en) SWITCHING MECHANISM
DE60101169D1 (en) Logic circuit with pipeline structure
DE60309259D1 (en) Two-material pouring element with encapsulated seal

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20050513

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

A4 Supplementary search report drawn up and despatched

Effective date: 20060119

RIC1 Information provided on ipc code assigned before grant

Ipc: H03K 19/017 20060101ALI20060113BHEP

Ipc: H03K 19/0944 20060101ALI20060113BHEP

Ipc: H01L 21/336 20060101AFI20040716BHEP

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE IE NL

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20060628