AU2002222968A1 - Silica zeolite low-k dielectric thin films - Google Patents
Silica zeolite low-k dielectric thin filmsInfo
- Publication number
- AU2002222968A1 AU2002222968A1 AU2002222968A AU2296802A AU2002222968A1 AU 2002222968 A1 AU2002222968 A1 AU 2002222968A1 AU 2002222968 A AU2002222968 A AU 2002222968A AU 2296802 A AU2296802 A AU 2296802A AU 2002222968 A1 AU2002222968 A1 AU 2002222968A1
- Authority
- AU
- Australia
- Prior art keywords
- thin films
- dielectric thin
- silica zeolite
- zeolite low
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 229910021536 Zeolite Inorganic materials 0.000 title 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000010457 zeolite Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B37/00—Compounds having molecular sieve properties but not having base-exchange properties
- C01B37/02—Crystalline silica-polymorphs, e.g. silicalites dealuminated aluminosilicate zeolites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21810200P | 2000-07-13 | 2000-07-13 | |
US60218102 | 2000-07-13 | ||
US28862601P | 2001-05-03 | 2001-05-03 | |
US60288626 | 2001-05-03 | ||
PCT/US2001/021439 WO2002007191A2 (en) | 2000-07-13 | 2001-07-06 | Silica zeolite low-k dielectric thin films |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002222968A1 true AU2002222968A1 (en) | 2002-01-30 |
Family
ID=26912568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002222968A Abandoned AU2002222968A1 (en) | 2000-07-13 | 2001-07-06 | Silica zeolite low-k dielectric thin films |
Country Status (4)
Country | Link |
---|---|
US (2) | US6573131B2 (ja) |
JP (1) | JP2004504716A (ja) |
AU (1) | AU2002222968A1 (ja) |
WO (1) | WO2002007191A2 (ja) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10052075A1 (de) * | 2000-10-19 | 2002-05-02 | Thomas Bein | Poröse Schichten und ein Verfahren zu deren Herstellung mittels Spin-Coating |
KR100395902B1 (ko) * | 2000-11-01 | 2003-08-25 | 학교법인 서강대학교 | 제올라이트 또는 유사분자체의 패턴화된 단층 또는 다층복합체의 제조 방법 및 이에 의해 제조된 복합체 |
US20040124438A1 (en) * | 2001-05-01 | 2004-07-01 | Shyama Mukherjee | Planarizers for spin etch planarization of electronic components and methods of use thereof |
US7541200B1 (en) | 2002-01-24 | 2009-06-02 | Novellus Systems, Inc. | Treatment of low k films with a silylating agent for damage repair |
US7083991B2 (en) * | 2002-01-24 | 2006-08-01 | Novellus Systems, Inc. | Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments |
EP1482540A4 (en) * | 2002-03-04 | 2009-11-25 | Rohm Co Ltd | METHOD FOR FORMING A THIN FILM |
JP3859540B2 (ja) * | 2002-05-14 | 2006-12-20 | 松下電器産業株式会社 | 低誘電率絶縁膜形成用材料 |
DE60307306T2 (de) * | 2002-10-11 | 2007-10-11 | Koninklijke Philips Electronics N.V. | Elektrische einrichtung mit einem phasenänderungsmaterial |
JP4471564B2 (ja) * | 2002-10-31 | 2010-06-02 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法 |
JP4225765B2 (ja) * | 2002-10-31 | 2009-02-18 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
JP4170735B2 (ja) * | 2002-11-13 | 2008-10-22 | 信越化学工業株式会社 | ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
US7404990B2 (en) | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US20040180244A1 (en) * | 2003-01-24 | 2004-09-16 | Tour James Mitchell | Process and apparatus for microwave desorption of elements or species from carbon nanotubes |
KR20050120627A (ko) * | 2003-01-24 | 2005-12-22 | 유니버시티 오브 노스 텍사스 | 탄소 나노튜브로부터 원소 또는 종을 마이크로파 탈착하기위한 방법 및 장치 |
US7288292B2 (en) * | 2003-03-18 | 2007-10-30 | International Business Machines Corporation | Ultra low k (ULK) SiCOH film and method |
US20050067344A1 (en) * | 2003-09-30 | 2005-03-31 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Zeolite membrane support and zeolite composite membrane |
US7303985B2 (en) * | 2003-11-17 | 2007-12-04 | Intel Corporation | Zeolite-carbon doped oxide composite low k dielectric |
US7674390B2 (en) * | 2003-11-17 | 2010-03-09 | Intel Corporation | Zeolite—sol gel nano-composite low k dielectric |
EP1698656B2 (en) * | 2003-12-24 | 2017-04-26 | Asahi Kasei Kabushiki Kaisha | Microporous membrane made from polyolefin |
ES2247921B1 (es) * | 2004-04-07 | 2007-06-16 | Universidad Politecnica De Valencia | Un material amorfo microporoso, procedimiento de preparacion y su uso en la conversion catalitica de compuestos organicos. |
US7109130B2 (en) * | 2004-05-04 | 2006-09-19 | California Institute Of Technology | Zeolite films for low k applications |
JP4893905B2 (ja) * | 2004-08-31 | 2012-03-07 | 独立行政法人産業技術総合研究所 | ゼオライト用原料液体、ゼオライト結晶作成方法、ゼオライト用原料液体の作成方法、およびゼオライト薄膜 |
JP4798329B2 (ja) * | 2004-09-03 | 2011-10-19 | Jsr株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
JP4798330B2 (ja) * | 2004-09-03 | 2011-10-19 | Jsr株式会社 | 絶縁膜形成用組成物、絶縁膜、およびその形成方法 |
US20060081557A1 (en) | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
JP2006117763A (ja) * | 2004-10-20 | 2006-05-11 | Catalysts & Chem Ind Co Ltd | 低誘電率非晶質シリカ系被膜形成用塗布液、その調製方法およびこれより得られる低誘電率非晶質シリカ系被膜 |
US7179547B2 (en) * | 2004-10-29 | 2007-02-20 | The Regents Of The University Of California | High aluminum zeolite coatings on corrodible metal surfaces |
DE102004053460A1 (de) * | 2004-11-05 | 2006-05-11 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Schutzelement für einen Messfühler, sowie entsprechender Messfühler und Wabenkörper |
KR101067596B1 (ko) * | 2004-12-01 | 2011-09-27 | 삼성코닝정밀소재 주식회사 | 저유전 다공성 박막의 제조방법 |
US8343880B2 (en) * | 2004-12-15 | 2013-01-01 | Uop Llc | Process for preparing a dielectric interlayer film containing silicon beta zeolite |
US20060142143A1 (en) * | 2004-12-15 | 2006-06-29 | Hayim Abrevaya | Process for preparing a dielectric interlayer film containing silicon beta zeolite |
US7365375B2 (en) * | 2005-03-25 | 2008-04-29 | Intel Corporation | Organic-framework zeolite interlayer dielectrics |
EP1941539A1 (en) * | 2005-06-03 | 2008-07-09 | Axcelis Technologies, Inc. | Ultraviolet curing process for low k dielectric films |
TWI292340B (en) * | 2005-07-13 | 2008-01-11 | Ind Tech Res Inst | Antireflective transparent zeolite hardcoat film, method for fabricating the same, and solution capable of forming said transparent zeolite film |
US7427570B2 (en) * | 2005-09-01 | 2008-09-23 | Micron Technology, Inc. | Porous organosilicate layers, and vapor deposition systems and methods for preparing same |
US7632771B2 (en) * | 2006-02-07 | 2009-12-15 | Imec | UV light exposure for functionalization and hydrophobization of pure-silica zeolites |
US7977121B2 (en) | 2006-11-17 | 2011-07-12 | Air Products And Chemicals, Inc. | Method and composition for restoring dielectric properties of porous dielectric materials |
GB0702327D0 (en) * | 2007-02-07 | 2007-03-21 | Leuven K U Res & Dev | Zeolite materials and synthesis method thereof |
JP2008205008A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | 半導体層間絶縁膜形成用組成物とその製造方法、膜形成方法と半導体装置 |
JP2008201833A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | 膜形成用組成物、低誘電率絶縁膜、低誘電率絶縁膜の形成方法及び半導体装置 |
JP2008201832A (ja) * | 2007-02-16 | 2008-09-04 | Shin Etsu Chem Co Ltd | シロキサン重合体とその製造方法、該重合体を含有する多孔質膜形成用塗布液ならびに多孔質膜と、該多孔質膜を用いた半導体装置 |
US8530000B2 (en) | 2007-09-19 | 2013-09-10 | Micron Technology, Inc. | Methods of forming charge-trapping regions |
CN101868760B (zh) * | 2007-11-21 | 2013-01-16 | 分子制模股份有限公司 | 用于纳米刻印光刻的多孔模板及方法、以及刻印层叠物 |
WO2009151638A2 (en) * | 2008-06-13 | 2009-12-17 | The Regents Of The University Of California | Zeolite and bone mimetic zeolite based coatings for bioimplants |
US20100072671A1 (en) * | 2008-09-25 | 2010-03-25 | Molecular Imprints, Inc. | Nano-imprint lithography template fabrication and treatment |
US8470188B2 (en) * | 2008-10-02 | 2013-06-25 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
US20100109201A1 (en) * | 2008-10-31 | 2010-05-06 | Molecular Imprints, Inc. | Nano-Imprint Lithography Template with Ordered Pore Structure |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
BRPI0918209A2 (pt) | 2008-12-23 | 2021-08-31 | 3M Innovative Properties Company | Sensor |
JP5662945B2 (ja) | 2008-12-23 | 2015-02-04 | スリーエム イノベイティブ プロパティズ カンパニー | 微多孔性有機ケイ酸塩材料を有する有機化学センサ |
JP5278688B2 (ja) * | 2009-03-18 | 2013-09-04 | 凸版印刷株式会社 | 反射防止積層体の製造方法 |
US20100249445A1 (en) * | 2009-03-24 | 2010-09-30 | The Regents Of The University Of California | Post-spin-on silylation method for hydrophobic and hydrofluoric acid-resistant porous silica films |
DE102009028146A1 (de) | 2009-07-31 | 2011-02-03 | Evonik Degussa Gmbh | Zeolith-haltige Drucktinten, Verfahren zu ihrer Herstellung und ihre Verwendung |
WO2011094317A2 (en) * | 2010-01-26 | 2011-08-04 | Molecular Imprints, Inc. | Micro-conformal templates for nanoimprint lithography |
TW201144091A (en) * | 2010-01-29 | 2011-12-16 | Molecular Imprints Inc | Ultra-compliant nanoimprint lithography templates |
TWI439417B (zh) * | 2010-12-29 | 2014-06-01 | Univ Ishou | Preparation of Nano - zeolite Thin Films with Low Dielectric Constant |
WO2013145687A1 (ja) * | 2012-03-26 | 2013-10-03 | 東ソー株式会社 | 均一メソ細孔を有するmfi型ゼオライト、及び、その製造方法 |
TWI483776B (zh) * | 2012-12-14 | 2015-05-11 | Univ Ishou | 沸石複合膜的製備方法 |
CN108033459B (zh) * | 2017-11-28 | 2020-04-24 | 淮阴工学院 | 光诱导自组装合成介孔杂原子分子筛的方法 |
CN115212732B (zh) * | 2021-04-20 | 2024-02-06 | 大连理工大学 | 一种具有优异气体分离性能mfi分子筛膜的制备方法及应用 |
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US5393409A (en) * | 1993-03-08 | 1995-02-28 | Uop | Hydrocracking process using a controlled porosity catalyst |
TW392288B (en) | 1997-06-06 | 2000-06-01 | Dow Corning | Thermally stable dielectric coatings |
WO1999010167A1 (fr) * | 1997-08-27 | 1999-03-04 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Objet enrobe et procede de fabrication de cet objet |
US5858457A (en) | 1997-09-25 | 1999-01-12 | Sandia Corporation | Process to form mesostructured films |
US6159871A (en) | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6117411A (en) * | 1998-06-29 | 2000-09-12 | California Institute Of Technology | Molecular sieve CIT-6 |
WO2000039028A1 (en) * | 1998-12-23 | 2000-07-06 | Battelle Memorial Institute | Mesoporous silica film from a solution containing a surfactant and methods of making same |
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- 2001-07-06 US US09/900,386 patent/US6573131B2/en not_active Expired - Lifetime
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2002
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US20020060364A1 (en) | 2002-05-23 |
WO2002007191A2 (en) | 2002-01-24 |
US20020134995A1 (en) | 2002-09-26 |
US6630696B2 (en) | 2003-10-07 |
JP2004504716A (ja) | 2004-02-12 |
US6573131B2 (en) | 2003-06-03 |
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