AU2001288954A1 - Electronic device manufacture - Google Patents
Electronic device manufactureInfo
- Publication number
- AU2001288954A1 AU2001288954A1 AU2001288954A AU8895401A AU2001288954A1 AU 2001288954 A1 AU2001288954 A1 AU 2001288954A1 AU 2001288954 A AU2001288954 A AU 2001288954A AU 8895401 A AU8895401 A AU 8895401A AU 2001288954 A1 AU2001288954 A1 AU 2001288954A1
- Authority
- AU
- Australia
- Prior art keywords
- electronic device
- device manufacture
- manufacture
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C67/00—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00
- B29C67/20—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00 for porous or cellular articles, e.g. of foam plastics, coarse-pored
- B29C67/202—Shaping techniques not covered by groups B29C39/00 - B29C65/00, B29C70/00 or B29C73/00 for porous or cellular articles, e.g. of foam plastics, coarse-pored comprising elimination of a solid or a liquid ingredient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0116—Porous, e.g. foam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23212700P | 2000-09-13 | 2000-09-13 | |
US60/232,127 | 2000-09-13 | ||
PCT/US2001/028208 WO2002023629A2 (en) | 2000-09-13 | 2001-09-08 | Electronic device manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001288954A1 true AU2001288954A1 (en) | 2002-03-26 |
Family
ID=22871971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001288954A Abandoned AU2001288954A1 (en) | 2000-09-13 | 2001-09-08 | Electronic device manufacture |
Country Status (8)
Country | Link |
---|---|
US (5) | US6596467B2 (de) |
EP (1) | EP1323189A2 (de) |
JP (1) | JP2004509468A (de) |
KR (1) | KR100841597B1 (de) |
CN (1) | CN1302532C (de) |
AU (1) | AU2001288954A1 (de) |
TW (1) | TW587307B (de) |
WO (1) | WO2002023629A2 (de) |
Families Citing this family (115)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7253731B2 (en) | 2001-01-23 | 2007-08-07 | Raymond Anthony Joao | Apparatus and method for providing shipment information |
EP1323189A2 (de) | 2000-09-13 | 2003-07-02 | Shipley Company LLC | Herstellung einer elektronischen vorrichtung |
US6998148B1 (en) | 2001-03-28 | 2006-02-14 | Shipley Company, L.L.C. | Porous materials |
JP2003152165A (ja) * | 2001-11-15 | 2003-05-23 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP2004165613A (ja) * | 2002-06-03 | 2004-06-10 | Shipley Co Llc | 電子デバイスの製造 |
US6903001B2 (en) * | 2002-07-18 | 2005-06-07 | Micron Technology Inc. | Techniques to create low K ILD for BEOL |
US20040017698A1 (en) * | 2002-07-25 | 2004-01-29 | Micron Technology, Inc. | Refined gate coupled noise compensation for open-drain output from semiconductor device |
US7153754B2 (en) * | 2002-08-29 | 2006-12-26 | Micron Technology, Inc. | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same |
JP2004274020A (ja) * | 2002-09-24 | 2004-09-30 | Rohm & Haas Electronic Materials Llc | 電子デバイス製造 |
US6746967B2 (en) * | 2002-09-30 | 2004-06-08 | Intel Corporation | Etching metal using sonication |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US6943121B2 (en) * | 2002-11-21 | 2005-09-13 | Intel Corporation | Selectively converted inter-layer dielectric |
US7018918B2 (en) * | 2002-11-21 | 2006-03-28 | Intel Corporation | Method of forming a selectively converted inter-layer dielectric using a porogen material |
US20040130027A1 (en) * | 2003-01-07 | 2004-07-08 | International Business Machines Corporation | Improved formation of porous interconnection layers |
US7138158B2 (en) * | 2003-02-28 | 2006-11-21 | Intel Corporation | Forming a dielectric layer using a hydrocarbon-containing precursor |
TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US6737365B1 (en) * | 2003-03-24 | 2004-05-18 | Intel Corporation | Forming a porous dielectric layer |
US20040191417A1 (en) * | 2003-03-28 | 2004-09-30 | Dorie Yontz | Method of integrating a porous dielectric in an integrated circuit device |
US7208389B1 (en) | 2003-03-31 | 2007-04-24 | Novellus Systems, Inc. | Method of porogen removal from porous low-k films using UV radiation |
US7241704B1 (en) | 2003-03-31 | 2007-07-10 | Novellus Systems, Inc. | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups |
US7176144B1 (en) | 2003-03-31 | 2007-02-13 | Novellus Systems, Inc. | Plasma detemplating and silanol capping of porous dielectric films |
US20050260420A1 (en) * | 2003-04-01 | 2005-11-24 | Collins Martha J | Low dielectric materials and methods for making same |
US6921978B2 (en) * | 2003-05-08 | 2005-07-26 | International Business Machines Corporation | Method to generate porous organic dielectric |
US7265061B1 (en) | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
US20040248403A1 (en) * | 2003-06-09 | 2004-12-09 | Dubin Valery M. | Method for forming electroless metal low resistivity interconnects |
US7122481B2 (en) * | 2003-07-25 | 2006-10-17 | Intel Corporation | Sealing porous dielectrics with silane coupling reagents |
DE10343411B4 (de) * | 2003-09-19 | 2009-07-23 | Gallus Druckmaschinen Gmbh | Rotationsdruckmaschine und Verfahren zum freien Zugänglichmachen eines Druckzylinders oder eines Linearführungs-Zylinders |
JP2005133060A (ja) * | 2003-10-29 | 2005-05-26 | Rohm & Haas Electronic Materials Llc | 多孔性材料 |
TWI220774B (en) * | 2003-11-03 | 2004-09-01 | Univ Nat Sun Yat Sen | Method for patterning low dielectric constant film and method for manufacturing dual damascene structure |
JP2005142473A (ja) * | 2003-11-10 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US7390537B1 (en) | 2003-11-20 | 2008-06-24 | Novellus Systems, Inc. | Methods for producing low-k CDO films with low residual stress |
JP2005181958A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | レーザーアブレーションを用いる電子部品および光学部品の形成方法 |
US7125793B2 (en) * | 2003-12-23 | 2006-10-24 | Intel Corporation | Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material |
US7341761B1 (en) | 2004-03-11 | 2008-03-11 | Novellus Systems, Inc. | Methods for producing low-k CDO films |
US7381662B1 (en) | 2004-03-11 | 2008-06-03 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7094713B1 (en) | 2004-03-11 | 2006-08-22 | Novellus Systems, Inc. | Methods for improving the cracking resistance of low-k dielectric materials |
US7781351B1 (en) | 2004-04-07 | 2010-08-24 | Novellus Systems, Inc. | Methods for producing low-k carbon doped oxide films with low residual stress |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
US7622400B1 (en) | 2004-05-18 | 2009-11-24 | Novellus Systems, Inc. | Method for improving mechanical properties of low dielectric constant materials |
US7078814B2 (en) * | 2004-05-25 | 2006-07-18 | International Business Machines Corporation | Method of forming a semiconductor device having air gaps and the structure so formed |
US7157367B2 (en) * | 2004-06-04 | 2007-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device structure having enhanced surface adhesion and failure mode analysis |
US20050272220A1 (en) * | 2004-06-07 | 2005-12-08 | Carlo Waldfried | Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications |
US7629272B2 (en) * | 2004-06-07 | 2009-12-08 | Axcelis Technologies, Inc. | Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics |
US7303994B2 (en) * | 2004-06-14 | 2007-12-04 | International Business Machines Corporation | Process for interfacial adhesion in laminate structures through patterned roughing of a surface |
DE102004030674A1 (de) * | 2004-06-24 | 2006-01-19 | Basf Ag | Vorrichtung und Verfahren zum Härten mit energiereicher Strahlung unter Inertgasatmosphäre |
US7421885B2 (en) * | 2004-06-28 | 2008-09-09 | Air Products And Chemicals, Inc. | Method for characterizing porous low dielectric constant films |
JP4492947B2 (ja) * | 2004-07-23 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20060046044A1 (en) * | 2004-08-24 | 2006-03-02 | Lee Chung J | Porous composite polymer dielectric film |
EP1632956A1 (de) * | 2004-09-07 | 2006-03-08 | Rohm and Haas Electronic Materials, L.L.C. | Zusammensetzungen enthaltend ein organisches Polysilica und ein Arylgruppen terminiertes Polyol sowie Methoden zur Herstellung von porösen organischen Polysilica-Filmen |
US7326444B1 (en) | 2004-09-14 | 2008-02-05 | Novellus Systems, Inc. | Methods for improving integration performance of low stress CDO films |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US7695765B1 (en) | 2004-11-12 | 2010-04-13 | Novellus Systems, Inc. | Methods for producing low-stress carbon-doped oxide films with improved integration properties |
US7229909B2 (en) * | 2004-12-09 | 2007-06-12 | International Business Machines Corporation | Integrated circuit chip utilizing dielectric layer having oriented cylindrical voids formed from carbon nanotubes |
WO2006064416A1 (en) * | 2004-12-16 | 2006-06-22 | Koninklijke Philips Electronics N.V. | A semiconductor device having a recess with non-porous walls in a porous dielectric and a method of manufacturing such a semiconductor device |
TWI261915B (en) * | 2005-01-07 | 2006-09-11 | Ind Tech Res Inst | Phase change memory and fabricating method thereof |
TW200631095A (en) * | 2005-01-27 | 2006-09-01 | Koninkl Philips Electronics Nv | A method of manufacturing a semiconductor device |
US7510982B1 (en) | 2005-01-31 | 2009-03-31 | Novellus Systems, Inc. | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles |
US7166531B1 (en) | 2005-01-31 | 2007-01-23 | Novellus Systems, Inc. | VLSI fabrication processes for introducing pores into dielectric materials |
US7341788B2 (en) * | 2005-03-11 | 2008-03-11 | International Business Machines Corporation | Materials having predefined morphologies and methods of formation thereof |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US7459183B2 (en) * | 2005-07-27 | 2008-12-02 | International Business Machines Corporation | Method of forming low-K interlevel dielectric layers and structures |
US20070032077A1 (en) * | 2005-08-08 | 2007-02-08 | Tzung-Yu Hung | Method of manufacturing metal plug and contact |
JP2007053133A (ja) * | 2005-08-15 | 2007-03-01 | Toshiba Corp | 半導体装置及びその製造方法 |
US7465652B2 (en) | 2005-08-16 | 2008-12-16 | Sony Corporation | Method of forming a catalyst layer on the barrier layer of a conductive interconnect of a semiconductor device |
US7422975B2 (en) | 2005-08-18 | 2008-09-09 | Sony Corporation | Composite inter-level dielectric structure for an integrated circuit |
US8586468B2 (en) | 2005-08-24 | 2013-11-19 | Sony Corporation | Integrated circuit chip stack employing carbon nanotube interconnects |
US7251799B2 (en) | 2005-08-30 | 2007-07-31 | Sony Corporation | Metal interconnect structure for integrated circuits and a design rule therefor |
US8368220B2 (en) * | 2005-10-18 | 2013-02-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Anchored damascene structures |
US7622378B2 (en) | 2005-11-09 | 2009-11-24 | Tokyo Electron Limited | Multi-step system and method for curing a dielectric film |
US7892985B1 (en) | 2005-11-15 | 2011-02-22 | Novellus Systems, Inc. | Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing |
US7381644B1 (en) | 2005-12-23 | 2008-06-03 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
US8110493B1 (en) | 2005-12-23 | 2012-02-07 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
JP4788415B2 (ja) * | 2006-03-15 | 2011-10-05 | ソニー株式会社 | 半導体装置の製造方法 |
US7923376B1 (en) | 2006-03-30 | 2011-04-12 | Novellus Systems, Inc. | Method of reducing defects in PECVD TEOS films |
US20070232046A1 (en) * | 2006-03-31 | 2007-10-04 | Koji Miyata | Damascene interconnection having porous low K layer with improved mechanical properties |
US7955531B1 (en) * | 2006-04-26 | 2011-06-07 | Rohm And Haas Electronic Materials Llc | Patterned light extraction sheet and method of making same |
US7521727B2 (en) * | 2006-04-26 | 2009-04-21 | Rohm And Haas Company | Light emitting device having improved light extraction efficiency and method of making same |
US7851384B2 (en) * | 2006-06-01 | 2010-12-14 | Applied Materials, Inc. | Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film |
US8956457B2 (en) * | 2006-09-08 | 2015-02-17 | Tokyo Electron Limited | Thermal processing system for curing dielectric films |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US8053375B1 (en) * | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
JP5142538B2 (ja) * | 2007-01-26 | 2013-02-13 | 株式会社東芝 | 半導体装置の製造方法 |
US20080206997A1 (en) * | 2007-02-26 | 2008-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
US7833692B2 (en) * | 2007-03-12 | 2010-11-16 | Brewer Science Inc. | Amine-arresting additives for materials used in photolithographic processes |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
US20090075491A1 (en) * | 2007-09-13 | 2009-03-19 | Tokyo Electron Limited | Method for curing a dielectric film |
US7977256B2 (en) * | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US7858533B2 (en) * | 2008-03-06 | 2010-12-28 | Tokyo Electron Limited | Method for curing a porous low dielectric constant dielectric film |
US20090226695A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | Method for treating a dielectric film with infrared radiation |
US20090226694A1 (en) * | 2008-03-06 | 2009-09-10 | Tokyo Electron Limited | POROUS SiCOH-CONTAINING DIELECTRIC FILM AND A METHOD OF PREPARING |
DE112009000518T5 (de) * | 2008-03-06 | 2011-05-05 | Tokyo Electron Ltd. | Verfahren zum Aushärten eines porösen dielektrischen Films mit niedriger Dielektrizitätskonstante |
US8029971B2 (en) * | 2008-03-13 | 2011-10-04 | International Business Machines Corporation | Photopatternable dielectric materials for BEOL applications and methods for use |
JP4423379B2 (ja) * | 2008-03-25 | 2010-03-03 | 合同会社先端配線材料研究所 | 銅配線、半導体装置および銅配線の形成方法 |
US8236684B2 (en) * | 2008-06-27 | 2012-08-07 | Applied Materials, Inc. | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US20100068897A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric treatment platform for dielectric film deposition and curing |
US8895942B2 (en) * | 2008-09-16 | 2014-11-25 | Tokyo Electron Limited | Dielectric treatment module using scanning IR radiation source |
US20100067886A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Ir laser optics system for dielectric treatment module |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
KR101042191B1 (ko) * | 2009-08-17 | 2011-06-20 | 백경물산주식회사 | 차량용 전기전자제품에서의 전원 제어 방법 |
US8242460B2 (en) * | 2010-03-29 | 2012-08-14 | Tokyo Electron Limited | Ultraviolet treatment apparatus |
US8764581B2 (en) * | 2010-08-13 | 2014-07-01 | Nike, Inc. | Systems and methods for manufacturing a golf ball |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
CN102427019A (zh) * | 2011-06-17 | 2012-04-25 | 上海华力微电子有限公司 | 超低介电常数薄膜实现高性能金属-氧化物-金属的方法 |
CN105097658B (zh) * | 2014-05-15 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件、互连层和互连层的制作方法 |
US9613906B2 (en) * | 2014-06-23 | 2017-04-04 | GlobalFoundries, Inc. | Integrated circuits including modified liners and methods for fabricating the same |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
WO2017154692A1 (ja) * | 2016-03-11 | 2017-09-14 | 株式会社村田製作所 | 複合基板及び複合基板の製造方法 |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
US11753517B2 (en) | 2019-12-12 | 2023-09-12 | Raytheon Company | Dispensable polyimide aerogel prepolymer, method of making the same, method of using the same, and substrate comprising patterned polyimide aerogel |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US30297A (en) * | 1860-10-09 | Improved light for cars | ||
US52125A (en) * | 1866-01-23 | Improved curb-bit | ||
JPS5412500A (en) | 1977-06-30 | 1979-01-30 | Matsushita Electric Ind Co Ltd | Film material providing high electrostatic capacitance |
JP2624254B2 (ja) * | 1987-05-22 | 1997-06-25 | 東京応化工業株式会社 | シリカ系被膜の膜質改善方法 |
MY112945A (en) | 1994-12-20 | 2001-10-31 | Ibm | Electronic devices comprising dielectric foamed polymers |
US5828315A (en) | 1995-10-05 | 1998-10-27 | Ncr Corporation | Method of sending messages to electronic price labels prior to their identification with price look-up items |
JPH09275142A (ja) * | 1995-12-12 | 1997-10-21 | Texas Instr Inc <Ti> | 半導体の空隙を低温低圧で充填を行う処理方法 |
US5994375A (en) * | 1996-02-12 | 1999-11-30 | Berlex Laboratories, Inc. | Benzamidine derivatives substituted by amino acid and hydroxy acid derivatives and their use as anti-coagulants |
US5962113A (en) | 1996-10-28 | 1999-10-05 | International Business Machines Corporation | Integrated circuit device and process for its manufacture |
US5767014A (en) | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
US6156651A (en) * | 1996-12-13 | 2000-12-05 | Texas Instruments Incorporated | Metallization method for porous dielectrics |
US5895263A (en) | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
WO1999003926A1 (fr) * | 1997-07-15 | 1999-01-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Composition alcoxysilane/polymere organique destinee a la production de fines pellicules isolantes et procede d'utilisation |
US6448331B1 (en) * | 1997-07-15 | 2002-09-10 | Asahi Kasei Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
US6350704B1 (en) * | 1997-10-14 | 2002-02-26 | Micron Technology Inc. | Porous silicon oxycarbide integrated circuit insulator |
AU3055599A (en) * | 1998-04-01 | 1999-10-25 | Asahi Kasei Kogyo Kabushiki Kaisha | Method of manufacturing interconnection structural body |
US6284050B1 (en) * | 1998-05-18 | 2001-09-04 | Novellus Systems, Inc. | UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition |
TW389988B (en) * | 1998-05-22 | 2000-05-11 | United Microelectronics Corp | Method for forming metal interconnect in dielectric layer with low dielectric constant |
US6417115B1 (en) * | 1998-05-26 | 2002-07-09 | Axeclis Technologies, Inc. | Treatment of dielectric materials |
RU2195050C2 (ru) * | 1998-06-05 | 2002-12-20 | Джорджиэ Тек Рисеч Копэрейшн | Способ получения пористой изоляционной композиции (варианты), композиция, используемая для получения пористого изоляционного материала (варианты), и полупроводниковое устройство |
US6093636A (en) * | 1998-07-08 | 2000-07-25 | International Business Machines Corporation | Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets |
EP1035183B1 (de) * | 1998-09-25 | 2009-11-25 | JGC Catalysts and Chemicals Ltd. | Flüssige beschichtungszusammensetzung für silicabeschichtung mit niedriger durchlössigkeit und mit dieser zusammensetzung beschichtetes substrat |
US6528426B1 (en) * | 1998-10-16 | 2003-03-04 | Texas Instruments Incorporated | Integrated circuit interconnect and method |
US6171945B1 (en) * | 1998-10-22 | 2001-01-09 | Applied Materials, Inc. | CVD nanoporous silica low dielectric constant films |
JP2002530505A (ja) | 1998-11-24 | 2002-09-17 | ザ ダウ ケミカル カンパニー | 架橋性マトリックス前駆体および気孔発生体を含有する組成物、並びにそれから製造された多孔質マトリックス |
JP3888794B2 (ja) * | 1999-01-27 | 2007-03-07 | 松下電器産業株式会社 | 多孔質膜の形成方法、配線構造体及びその形成方法 |
US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US6342454B1 (en) | 1999-11-16 | 2002-01-29 | International Business Machines Corporation | Electronic devices with dielectric compositions and method for their manufacture |
US6107357A (en) * | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
US6329062B1 (en) * | 2000-02-29 | 2001-12-11 | Novellus Systems, Inc. | Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits |
US6495479B1 (en) * | 2000-05-05 | 2002-12-17 | Honeywell International, Inc. | Simplified method to produce nanoporous silicon-based films |
US6352917B1 (en) * | 2000-06-21 | 2002-03-05 | Chartered Semiconductor Manufacturing Ltd. | Reversed damascene process for multiple level metal interconnects |
US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
JP2002050687A (ja) * | 2000-08-03 | 2002-02-15 | Seiko Epson Corp | 半導体装置の製造方法 |
US6391932B1 (en) * | 2000-08-08 | 2002-05-21 | Shipley Company, L.L.C. | Porous materials |
JP5350571B2 (ja) | 2000-08-21 | 2013-11-27 | ダウ グローバル テクノロジーズ エルエルシー | マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 |
EP1323189A2 (de) * | 2000-09-13 | 2003-07-02 | Shipley Company LLC | Herstellung einer elektronischen vorrichtung |
EP1197998A3 (de) * | 2000-10-10 | 2005-12-21 | Shipley Company LLC | Antireflektiver Schaumstoff |
US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
US20030054115A1 (en) | 2001-09-14 | 2003-03-20 | Ralph Albano | Ultraviolet curing process for porous low-K materials |
DE20116246U1 (de) | 2001-10-04 | 2002-03-28 | Textilma Ag | Rotations-Siebdruckvorrichtung für textile Flächengebilde |
-
2001
- 2001-09-08 EP EP01968725A patent/EP1323189A2/de not_active Ceased
- 2001-09-08 WO PCT/US2001/028208 patent/WO2002023629A2/en active Application Filing
- 2001-09-08 JP JP2002527574A patent/JP2004509468A/ja active Pending
- 2001-09-08 CN CNB018155650A patent/CN1302532C/zh not_active Expired - Fee Related
- 2001-09-08 AU AU2001288954A patent/AU2001288954A1/en not_active Abandoned
- 2001-09-08 KR KR1020037003612A patent/KR100841597B1/ko active IP Right Grant
- 2001-09-08 US US09/948,388 patent/US6596467B2/en not_active Expired - Lifetime
- 2001-09-12 TW TW090122533A patent/TW587307B/zh not_active IP Right Cessation
-
2002
- 2002-11-07 US US10/289,932 patent/US6667147B2/en not_active Expired - Lifetime
-
2003
- 2003-03-22 US US10/394,342 patent/US7163780B2/en not_active Expired - Lifetime
- 2003-03-22 US US10/394,072 patent/US20030186168A1/en not_active Abandoned
-
2004
- 2004-02-19 US US10/782,657 patent/US7294453B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1528016A (zh) | 2004-09-08 |
US6667147B2 (en) | 2003-12-23 |
EP1323189A2 (de) | 2003-07-02 |
JP2004509468A (ja) | 2004-03-25 |
US20040161922A1 (en) | 2004-08-19 |
US6596467B2 (en) | 2003-07-22 |
US7294453B2 (en) | 2007-11-13 |
US20020030297A1 (en) | 2002-03-14 |
US20030186168A1 (en) | 2003-10-02 |
US20030059723A1 (en) | 2003-03-27 |
CN1302532C (zh) | 2007-02-28 |
KR20030038737A (ko) | 2003-05-16 |
US20030186169A1 (en) | 2003-10-02 |
KR100841597B1 (ko) | 2008-06-26 |
WO2002023629A3 (en) | 2002-10-31 |
US7163780B2 (en) | 2007-01-16 |
WO2002023629A2 (en) | 2002-03-21 |
TW587307B (en) | 2004-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001288954A1 (en) | Electronic device manufacture | |
AU2001238033A1 (en) | Electronic switching device | |
AU2001236895A1 (en) | Integrated circuit | |
AU2001269662A1 (en) | Electronic stamp | |
AU2001228310A1 (en) | Rear-projecting device | |
AU2002318809A1 (en) | Integrated circuit device | |
AU2001252906A1 (en) | Electronic identifier | |
GB2358987B (en) | Electronic devices | |
AU2001234308A1 (en) | Controlling an electronic device | |
AU2693500A (en) | Electronic device | |
AU2001254745A1 (en) | Pellet-freezing device | |
AU2001241311A1 (en) | Cap-signaling device | |
AU2000275768A1 (en) | Electronic device | |
AU2001268988A1 (en) | Portable electronic devices | |
AU9336101A (en) | Electronic browser | |
AU2002366912A1 (en) | Vacuum electronic device | |
AU2001238543A1 (en) | Antiextrusion device | |
AU2001250678A1 (en) | Holder-grasping device | |
AU2001283994A1 (en) | Electronic circuit | |
AU2001236941A1 (en) | Electronic factoring | |
AU6269700A (en) | Forming device | |
AU2002215241A1 (en) | Paper-clipping device | |
AU2002221621A1 (en) | An electronic device | |
AU2001289737A1 (en) | Integrated circuit | |
AU2001283078A1 (en) | Eye-exercise device |