AU2001286905A1 - Trench schottky rectifier - Google Patents

Trench schottky rectifier

Info

Publication number
AU2001286905A1
AU2001286905A1 AU2001286905A AU8690501A AU2001286905A1 AU 2001286905 A1 AU2001286905 A1 AU 2001286905A1 AU 2001286905 A AU2001286905 A AU 2001286905A AU 8690501 A AU8690501 A AU 8690501A AU 2001286905 A1 AU2001286905 A1 AU 2001286905A1
Authority
AU
Australia
Prior art keywords
schottky rectifier
trench schottky
trench
rectifier
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001286905A
Other languages
English (en)
Inventor
Max Chen
Fwu-Iuan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001286905A1 publication Critical patent/AU2001286905A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
AU2001286905A 2000-08-31 2001-08-29 Trench schottky rectifier Abandoned AU2001286905A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/653,084 US6707127B1 (en) 2000-08-31 2000-08-31 Trench schottky rectifier
US09/653,084 2000-08-31
PCT/US2001/026954 WO2002019433A2 (en) 2000-08-31 2001-08-29 Trench schottky rectifier

Publications (1)

Publication Number Publication Date
AU2001286905A1 true AU2001286905A1 (en) 2002-03-13

Family

ID=24619436

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001286905A Abandoned AU2001286905A1 (en) 2000-08-31 2001-08-29 Trench schottky rectifier

Country Status (9)

Country Link
US (2) US6707127B1 (de)
EP (1) EP1314207B1 (de)
JP (1) JP4855636B2 (de)
KR (1) KR100765924B1 (de)
CN (1) CN1286187C (de)
AU (1) AU2001286905A1 (de)
DE (1) DE60118217T2 (de)
TW (1) TW523933B (de)
WO (1) WO2002019433A2 (de)

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US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7002187B1 (en) * 2003-06-09 2006-02-21 Micrel, Inc. Integrated schottky diode using buried power buss structure and method for making same
US6977208B2 (en) * 2004-01-27 2005-12-20 International Rectifier Corporation Schottky with thick trench bottom and termination oxide and process for manufacture
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
FR2880193A1 (fr) * 2004-12-23 2006-06-30 St Microelectronics Sa Diode schottky a barriere verticale
WO2006085267A2 (en) * 2005-02-08 2006-08-17 Nxp B.V. Semiconductor device with trench field plate
US7948029B2 (en) 2005-02-11 2011-05-24 Alpha And Omega Semiconductor Incorporated MOS device with varying trench depth
US8093651B2 (en) * 2005-02-11 2012-01-10 Alpha & Omega Semiconductor Limited MOS device with integrated schottky diode in active region contact trench
US7285822B2 (en) * 2005-02-11 2007-10-23 Alpha & Omega Semiconductor, Inc. Power MOS device
US8283723B2 (en) * 2005-02-11 2012-10-09 Alpha & Omega Semiconductor Limited MOS device with low injection diode
US8362547B2 (en) 2005-02-11 2013-01-29 Alpha & Omega Semiconductor Limited MOS device with Schottky barrier controlling layer
US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
JP2006339508A (ja) * 2005-06-03 2006-12-14 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
US7602036B2 (en) * 2006-03-07 2009-10-13 International Rectifier Corporation Trench type Schottky rectifier with oxide mass in trench bottom
JP2008034572A (ja) * 2006-07-28 2008-02-14 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US8159021B2 (en) * 2008-02-20 2012-04-17 Force-Mos Technology Corporation Trench MOSFET with double epitaxial structure
US7858506B2 (en) 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US7960781B2 (en) 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US7902075B2 (en) 2008-09-08 2011-03-08 Semiconductor Components Industries, L.L.C. Semiconductor trench structure having a sealing plug and method
US9000550B2 (en) 2008-09-08 2015-04-07 Semiconductor Components Industries, Llc Semiconductor component and method of manufacture
IT1394649B1 (it) * 2009-06-01 2012-07-05 St Microelectronics Srl Fotodiodo con contatto schottky sulle pareti di trincee parallele e relativo metodo di fabbricazione
DE102009028248A1 (de) * 2009-08-05 2011-02-10 Robert Bosch Gmbh Halbleiteranordnung
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
JP2011199306A (ja) * 2011-06-03 2011-10-06 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
CN102222701A (zh) * 2011-06-23 2011-10-19 哈尔滨工程大学 一种沟槽结构肖特基器件
CN103094100B (zh) * 2011-10-28 2015-09-30 比亚迪股份有限公司 一种形成肖特基二极管的方法
CN103579368A (zh) * 2012-07-18 2014-02-12 朱江 一种沟槽肖特基半导体装置及其制备方法
TWI511305B (zh) * 2012-11-01 2015-12-01 Chip Integration Tech Co Ltd 蕭特基整流元件之製造方法
CN103022090A (zh) * 2012-12-27 2013-04-03 淄博美林电子有限公司 一种高效率、高耐压肖特基芯片
CN104124151B (zh) * 2014-07-14 2017-08-25 中航（重庆）微电子有限公司 一种沟槽结构肖特基势垒二极管及其制作方法
EP3067935A1 (de) * 2015-03-10 2016-09-14 ABB Technology AG Leistungshalbleitergleichrichter mit steuerbarer Einschaltzustandsspannung
JP7284721B2 (ja) * 2020-01-30 2023-05-31 株式会社豊田中央研究所 ダイオード
CN113193053B (zh) * 2021-05-20 2023-11-07 电子科技大学 一种具有高正向电流密度的沟槽肖特基二极管
JP2023079551A (ja) * 2021-11-29 2023-06-08 Tdk株式会社 ショットキーバリアダイオード

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US5381026A (en) * 1990-09-17 1995-01-10 Kabushiki Kaisha Toshiba Insulated-gate thyristor
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US5262668A (en) 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
JP3173186B2 (ja) * 1992-10-08 2001-06-04 株式会社村田製作所 ショットキーバリア半導体装置の製造方法
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US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6420768B1 (en) * 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
US6580141B2 (en) * 2001-06-01 2003-06-17 General Semiconductor, Inc. Trench schottky rectifier

Also Published As

Publication number Publication date
CN1286187C (zh) 2006-11-22
WO2002019433A3 (en) 2002-12-05
US20020066926A1 (en) 2002-06-06
DE60118217T2 (de) 2006-12-28
TW523933B (en) 2003-03-11
JP4855636B2 (ja) 2012-01-18
EP1314207A2 (de) 2003-05-28
WO2002019433A2 (en) 2002-03-07
JP2004521480A (ja) 2004-07-15
US6707127B1 (en) 2004-03-16
DE60118217D1 (de) 2006-05-11
EP1314207B1 (de) 2006-03-22
US6518152B2 (en) 2003-02-11
KR20030038718A (ko) 2003-05-16
KR100765924B1 (ko) 2007-10-11
CN1498425A (zh) 2004-05-19

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