AU2001286765A1 - Mtj mram series-parallel architecture - Google Patents

Mtj mram series-parallel architecture

Info

Publication number
AU2001286765A1
AU2001286765A1 AU2001286765A AU8676501A AU2001286765A1 AU 2001286765 A1 AU2001286765 A1 AU 2001286765A1 AU 2001286765 A AU2001286765 A AU 2001286765A AU 8676501 A AU8676501 A AU 8676501A AU 2001286765 A1 AU2001286765 A1 AU 2001286765A1
Authority
AU
Australia
Prior art keywords
series
parallel architecture
mtj mram
mtj
mram
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001286765A
Other languages
English (en)
Inventor
Mark Deherrera
Mark Durlam
Peter K. Naji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2001286765A1 publication Critical patent/AU2001286765A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
AU2001286765A 2000-08-28 2001-08-24 Mtj mram series-parallel architecture Abandoned AU2001286765A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/649,117 2000-08-28
US09/649,117 US6331943B1 (en) 2000-08-28 2000-08-28 MTJ MRAM series-parallel architecture
PCT/US2001/026571 WO2002019337A2 (en) 2000-08-28 2001-08-24 Mtj mram series-parallel architecture

Publications (1)

Publication Number Publication Date
AU2001286765A1 true AU2001286765A1 (en) 2002-03-13

Family

ID=24603530

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001286765A Abandoned AU2001286765A1 (en) 2000-08-28 2001-08-24 Mtj mram series-parallel architecture

Country Status (9)

Country Link
US (1) US6331943B1 (ko)
EP (1) EP1356469B1 (ko)
JP (1) JP2004516645A (ko)
KR (1) KR100855891B1 (ko)
CN (1) CN100565700C (ko)
AU (1) AU2001286765A1 (ko)
DE (1) DE60121043T2 (ko)
TW (1) TW520499B (ko)
WO (1) WO2002019337A2 (ko)

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* Cited by examiner, † Cited by third party
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KR100855891B1 (ko) 2008-09-03
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JP2004516645A (ja) 2004-06-03
US6331943B1 (en) 2001-12-18
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CN1524269A (zh) 2004-08-25
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