AU2001286707A1 - Photoacid generators and photoresists comprising same - Google Patents
Photoacid generators and photoresists comprising sameInfo
- Publication number
- AU2001286707A1 AU2001286707A1 AU2001286707A AU8670701A AU2001286707A1 AU 2001286707 A1 AU2001286707 A1 AU 2001286707A1 AU 2001286707 A AU2001286707 A AU 2001286707A AU 8670701 A AU8670701 A AU 8670701A AU 2001286707 A1 AU2001286707 A1 AU 2001286707A1
- Authority
- AU
- Australia
- Prior art keywords
- photoresists
- same
- photoacid generators
- photoacid
- generators
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/52—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
- C07D333/54—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/26—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D333/30—Hetero atoms other than halogen
- C07D333/34—Sulfur atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/648,022 | 2000-08-25 | ||
US09/648,022 US6664022B1 (en) | 2000-08-25 | 2000-08-25 | Photoacid generators and photoresists comprising same |
PCT/US2001/026438 WO2002019033A2 (en) | 2000-08-25 | 2001-08-24 | Photoacid generators and photoresists comprising same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001286707A1 true AU2001286707A1 (en) | 2002-03-13 |
Family
ID=24599107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001286707A Abandoned AU2001286707A1 (en) | 2000-08-25 | 2001-08-24 | Photoacid generators and photoresists comprising same |
Country Status (5)
Country | Link |
---|---|
US (1) | US6664022B1 (ja) |
JP (1) | JP4762482B2 (ja) |
AU (1) | AU2001286707A1 (ja) |
TW (1) | TWI297419B (ja) |
WO (1) | WO2002019033A2 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557615B1 (ko) * | 2000-10-23 | 2006-03-10 | 주식회사 하이닉스반도체 | 레지스트 플로우 공정용 포토레지스트 조성물 |
EP1308781A3 (en) * | 2001-10-05 | 2003-09-03 | Shipley Co. L.L.C. | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists containing them |
US7531286B2 (en) * | 2002-03-15 | 2009-05-12 | Jsr Corporation | Radiation-sensitive resin composition |
EP1583740B1 (en) * | 2002-12-23 | 2010-05-26 | STX Aprilis, Inc. | Fluoroarylsulfonium photoacid generators |
US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
JP4583790B2 (ja) * | 2003-06-26 | 2010-11-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
JP4411042B2 (ja) * | 2003-09-19 | 2010-02-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4612999B2 (ja) * | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4622858B2 (ja) * | 2003-10-21 | 2011-02-02 | 和光純薬工業株式会社 | トリアリールスルホニウム塩の製造法 |
JP4448730B2 (ja) | 2004-04-20 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法 |
KR20050108277A (ko) * | 2004-05-12 | 2005-11-16 | 주식회사 동진쎄미켐 | 광산발생 작용성 모노머, 이를 포함하는 감광성 폴리머 및화학증폭형 포토레지스트 조성물 |
WO2006077705A1 (ja) * | 2005-01-18 | 2006-07-27 | Tokyo Ohka Kogyo Co., Ltd. | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4754265B2 (ja) | 2005-05-17 | 2011-08-24 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4536622B2 (ja) * | 2005-08-23 | 2010-09-01 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4566861B2 (ja) * | 2005-08-23 | 2010-10-20 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP2008026838A (ja) * | 2006-06-23 | 2008-02-07 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4574595B2 (ja) * | 2006-06-23 | 2010-11-04 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP2008024671A (ja) * | 2006-07-24 | 2008-02-07 | Tokyo Ohka Kogyo Co Ltd | 化合物、酸発生剤、レジスト組成物及びレジストパターン形成方法 |
JP4742001B2 (ja) * | 2006-09-19 | 2011-08-10 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
JP5016338B2 (ja) * | 2007-03-26 | 2012-09-05 | 住友精化株式会社 | 光酸発生剤および光反応性組成物 |
KR20140095541A (ko) * | 2007-05-23 | 2014-08-01 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물 |
JP5205027B2 (ja) * | 2007-07-18 | 2013-06-05 | 東京応化工業株式会社 | 化合物の製造方法 |
WO2009069428A1 (ja) | 2007-11-28 | 2009-06-04 | Sumitomo Seika Chemicals Co., Ltd. | 光酸発生剤および光反応性組成物 |
TWI477495B (zh) | 2009-12-10 | 2015-03-21 | 羅門哈斯電子材料有限公司 | 光酸產生劑及含該光酸產生劑之光阻 |
CN104761608A (zh) | 2009-12-10 | 2015-07-08 | 罗门哈斯电子材料有限公司 | 胆酸酯光酸发生剂和包含该发生剂的光致抗蚀剂 |
JP5969171B2 (ja) | 2010-03-31 | 2016-08-17 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤およびこれを含むフォトレジスト |
JP4621806B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
JP4621807B2 (ja) * | 2010-04-22 | 2011-01-26 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
EP2383611A3 (en) | 2010-04-27 | 2012-01-25 | Rohm and Haas Electronic Materials LLC | Photoacid generators and photoresists comprising same |
JP6049250B2 (ja) | 2010-11-30 | 2016-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 光酸発生剤 |
JP6482344B2 (ja) * | 2015-03-24 | 2019-03-13 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 |
US10520813B2 (en) | 2016-12-15 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd | Extreme ultraviolet photoresist with high-efficiency electron transfer |
US11820735B2 (en) * | 2018-04-12 | 2023-11-21 | Sumitomo Chemical Company, Limited | Salt, acid generator, resist composition and method for producing resist pattern |
JP7218162B2 (ja) * | 2018-12-04 | 2023-02-06 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、及び化合物 |
WO2021131280A1 (ja) * | 2019-12-26 | 2021-07-01 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
US11852972B2 (en) | 2020-10-30 | 2023-12-26 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and pattern formation methods |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3622586A (en) | 1969-05-21 | 1971-11-23 | Dow Chemical Co | Pyridyliodonium salts |
US3763187A (en) * | 1972-06-22 | 1973-10-02 | Dow Chemical Co | Thienyliodonium salts |
US3896140A (en) | 1973-01-02 | 1975-07-22 | Dow Chemical Co | Iodonium compounds of 3,5-dimethylisoxazole |
IE43648B1 (en) * | 1974-10-30 | 1981-04-22 | Ici Ltd | Methods and compositions for use in animal husbandry |
GB1499508A (en) | 1974-12-06 | 1978-02-01 | Ici Ltd | 3,3,3-trifluoropropionic acid derivatives |
US4118297A (en) * | 1976-03-08 | 1978-10-03 | The Dow Chemical Company | Fused poly-nuclear aromatic cyclic sulfonium zwitterions and polymers thereof |
US4090936A (en) * | 1976-10-28 | 1978-05-23 | Minnesota Mining And Manufacturing Company | Photohardenable compositions |
US4513137A (en) * | 1981-04-09 | 1985-04-23 | The University Of Akron | Iodonium salts |
JPH07179511A (ja) | 1993-12-22 | 1995-07-18 | Japan Carlit Co Ltd:The | 光重合性樹脂組成物 |
US5932391A (en) | 1995-08-18 | 1999-08-03 | Kabushiki Kaisha Toshiba | Resist for alkali development |
JP3586048B2 (ja) * | 1995-08-18 | 2004-11-10 | 株式会社東芝 | アルカリ現像用レジスト |
EP0846681B1 (en) | 1995-08-22 | 2003-12-03 | Nippon Soda Co., Ltd. | Novel sulfonium salt compounds, polymerization initiator, curable composition, and curing method |
JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
JP3605939B2 (ja) * | 1996-05-13 | 2004-12-22 | 東洋インキ製造株式会社 | 感エネルギー線ポジ型感応性組成物 |
US6187504B1 (en) * | 1996-12-19 | 2001-02-13 | Jsr Corporation | Radiation sensitive resin composition |
US6280897B1 (en) | 1996-12-24 | 2001-08-28 | Kabushiki Kaisha Toshiba | Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts |
JP3431481B2 (ja) * | 1996-12-24 | 2003-07-28 | 株式会社東芝 | 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法 |
US6042991A (en) * | 1997-02-18 | 2000-03-28 | Fuji Photo Film Co., Ltd. | Positive working photosensitive composition |
JPH11242335A (ja) * | 1998-02-26 | 1999-09-07 | Jsr Corp | 感放射線性樹脂組成物 |
JP2000010285A (ja) * | 1998-06-19 | 2000-01-14 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
EP0972761B1 (en) | 1998-07-16 | 2001-12-12 | Korea Kumho Petrochemical Co. Ltd. | Sulfonium salt and its manufacturing method |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
WO2000010056A1 (en) | 1998-08-14 | 2000-02-24 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
KR100362937B1 (ko) * | 1998-12-31 | 2003-10-04 | 주식회사 하이닉스반도체 | 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물 |
-
2000
- 2000-08-25 US US09/648,022 patent/US6664022B1/en not_active Expired - Lifetime
-
2001
- 2001-08-24 JP JP2002523093A patent/JP4762482B2/ja not_active Expired - Lifetime
- 2001-08-24 WO PCT/US2001/026438 patent/WO2002019033A2/en active Search and Examination
- 2001-08-24 AU AU2001286707A patent/AU2001286707A1/en not_active Abandoned
- 2001-08-24 TW TW090120841A patent/TWI297419B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002019033A2 (en) | 2002-03-07 |
JP2004521372A (ja) | 2004-07-15 |
US6664022B1 (en) | 2003-12-16 |
WO2002019033A3 (en) | 2003-10-30 |
TWI297419B (en) | 2008-06-01 |
JP4762482B2 (ja) | 2011-08-31 |
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