AU2001271770A1 - Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives - Google Patents
Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivativesInfo
- Publication number
- AU2001271770A1 AU2001271770A1 AU2001271770A AU7177001A AU2001271770A1 AU 2001271770 A1 AU2001271770 A1 AU 2001271770A1 AU 2001271770 A AU2001271770 A AU 2001271770A AU 7177001 A AU7177001 A AU 7177001A AU 2001271770 A1 AU2001271770 A1 AU 2001271770A1
- Authority
- AU
- Australia
- Prior art keywords
- group
- metal
- organometallic compounds
- precursors
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910052751 metal Inorganic materials 0.000 title abstract 8
- 239000002184 metal Substances 0.000 title abstract 8
- 150000002902 organometallic compounds Chemical class 0.000 title abstract 3
- 239000000843 powder Substances 0.000 title abstract 2
- 239000002243 precursor Substances 0.000 title abstract 2
- 150000002739 metals Chemical class 0.000 abstract 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 229910017052 cobalt Inorganic materials 0.000 abstract 2
- 239000010941 cobalt Substances 0.000 abstract 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 2
- 229910052805 deuterium Inorganic materials 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 abstract 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 125000003710 aryl alkyl group Chemical group 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 150000002431 hydrogen Chemical group 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- ILNKLXHFYKXPKY-UHFFFAOYSA-N iridium osmium Chemical compound [Os].[Ir] ILNKLXHFYKXPKY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 abstract 1
- -1 oxysilyl Chemical group 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052702 rhenium Inorganic materials 0.000 abstract 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052707 ruthenium Inorganic materials 0.000 abstract 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract 1
- 125000000547 substituted alkyl group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052713 technetium Inorganic materials 0.000 abstract 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21498800P | 2000-06-29 | 2000-06-29 | |
| US60214988 | 2000-06-29 | ||
| US09/894,450 US6777565B2 (en) | 2000-06-29 | 2001-06-28 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
| US09894450 | 2001-06-28 | ||
| PCT/US2001/021050 WO2002002574A1 (en) | 2000-06-29 | 2001-06-29 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2001271770A1 true AU2001271770A1 (en) | 2002-01-14 |
Family
ID=26909576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001271770A Abandoned AU2001271770A1 (en) | 2000-06-29 | 2001-06-29 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US6777565B2 (de) |
| EP (1) | EP1299404B1 (de) |
| KR (1) | KR100795324B1 (de) |
| CN (1) | CN100354286C (de) |
| AT (1) | ATE323711T1 (de) |
| AU (1) | AU2001271770A1 (de) |
| DE (1) | DE60118925T2 (de) |
| WO (1) | WO2002002574A1 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100455287B1 (ko) * | 2002-02-28 | 2004-11-06 | 삼성전자주식회사 | 반도체 장치의 커패시터, 그 제조방법 및 상기 커패시터를채용하고 있는 전자 소자 |
| US6869806B2 (en) * | 2002-03-14 | 2005-03-22 | Wisys Technology Foundation, Inc. | Method and apparatus for the production of a semiconductor compatible ferromagnetic film |
| KR100819297B1 (ko) * | 2002-06-26 | 2008-04-02 | 삼성전자주식회사 | 고반사율 미세 패턴의 제조방법 |
| US20040180452A1 (en) * | 2003-03-14 | 2004-09-16 | Yongjie Cui | Method and apparatus for the production of a semiconductor compatible ferromagnetic film |
| JP4581119B2 (ja) * | 2003-09-17 | 2010-11-17 | 株式会社トリケミカル研究所 | ＮｉＳｉ膜形成材料およびＮｉＳｉ膜形成方法 |
| KR100555541B1 (ko) * | 2003-12-23 | 2006-03-03 | 삼성전자주식회사 | 코발트 실리사이드막 형성방법 및 그 형성방법을 이용한반도체 장치의 제조방법 |
| US7294449B1 (en) | 2003-12-31 | 2007-11-13 | Kovio, Inc. | Radiation patternable functional materials, methods of their use, and structures formed therefrom |
| US7004874B2 (en) * | 2004-03-15 | 2006-02-28 | Magna Powertrain, Inc. | On-demand power take-off unit for four-wheel drive vehicle |
| JP4353371B2 (ja) * | 2004-08-06 | 2009-10-28 | 株式会社トリケミカル研究所 | 膜形成方法 |
| KR100643637B1 (ko) * | 2005-01-25 | 2006-11-10 | 한국화학연구원 | 니켈 아미노알콕사이드 선구 물질을 사용하는 원자층침착법으로 니켈 산화물 박막을 제조하는 방법 |
| US7064224B1 (en) | 2005-02-04 | 2006-06-20 | Air Products And Chemicals, Inc. | Organometallic complexes and their use as precursors to deposit metal films |
| US20100264224A1 (en) * | 2005-11-22 | 2010-10-21 | Lex Kosowsky | Wireless communication device using voltage switchable dielectric material |
| KR100918362B1 (ko) * | 2006-07-27 | 2009-09-22 | 주식회사 엘지화학 | 유기 박막 트랜지스터 및 이의 제조방법 |
| KR100852234B1 (ko) * | 2006-11-17 | 2008-08-13 | 삼성전자주식회사 | 금속 산화막의 형성 방법, 이를 이용한 게이트 구조물의제조 방법 및 커패시터의 제조 방법 |
| ATE500261T1 (de) * | 2006-12-22 | 2011-03-15 | Air Liquide | Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis |
| US7754600B2 (en) * | 2007-03-01 | 2010-07-13 | Hewlett-Packard Development Company, L.P. | Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices |
| CN101680085B (zh) | 2007-05-21 | 2012-12-05 | 乔治洛德方法研究和开发液化空气有限公司 | 用于半导体领域的钴前体 |
| US20090220771A1 (en) * | 2008-02-12 | 2009-09-03 | Robert Fleming | Voltage switchable dielectric material with superior physical properties for structural applications |
| DE102008029385B4 (de) * | 2008-06-23 | 2014-11-27 | Carl Von Ossietzky Universität Oldenburg | Verfahren zur Herstellung von Seltenerdmetalloxidschichten und Übergangsmetalloxidschichten, Verwendung einer Vorrichtung zur Herstellung von Seltenerdmetalloxidschichten und Übergangsmetalloxidschichten sowie Verwendung eines Metallnitrats |
| WO2011078399A1 (ja) * | 2009-12-25 | 2011-06-30 | 独立行政法人科学技術振興機構 | 結晶性コバルトシリサイド膜の形成方法 |
| CN103413758B (zh) * | 2013-07-17 | 2017-02-08 | 华为技术有限公司 | 半导体鳍条的制作方法、FinFET器件的制作方法 |
| KR102487441B1 (ko) * | 2014-09-14 | 2023-01-12 | 엔테그리스, 아이엔씨. | 구리 및 유전체 상의 코발트 침착 선택성 |
| CN108495949B (zh) * | 2015-12-02 | 2020-08-18 | 巴斯夫欧洲公司 | 产生薄无机膜的方法 |
| KR20180111865A (ko) | 2016-01-27 | 2018-10-11 | 바스프 에스이 | 얇은 무기 필름의 생성 방법 |
| KR102467795B1 (ko) * | 2016-08-31 | 2022-11-18 | 바스프 에스이 | 얇은 무기 필름의 생성 방법 |
| CN106684122B (zh) * | 2017-01-20 | 2020-04-24 | 京东方科技集团股份有限公司 | 导电层、薄膜晶体管及其制作方法、阵列基板和显示装置 |
| JP6980406B2 (ja) * | 2017-04-25 | 2021-12-15 | 株式会社日立ハイテク | 半導体製造装置及び半導体装置の製造方法 |
| US11380523B2 (en) | 2019-02-14 | 2022-07-05 | Hitachi High-Tech Corporation | Semiconductor manufacturing apparatus |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB717269A (en) | 1951-04-09 | 1954-10-27 | Azfa Ag Fuer Photofabrikation | Magnetizable metal oxides |
| US3088361A (en) | 1958-11-28 | 1963-05-07 | Hallock Robert Lay | Driven fastener |
| US3290348A (en) * | 1963-04-25 | 1966-12-06 | Shell Oil Co | Cobalt (omicron) complexes of phosphorus esters |
| GB1135979A (en) * | 1965-06-11 | 1968-12-11 | Ici Ltd | Hydrogenation process |
| US4645849A (en) * | 1985-01-22 | 1987-02-24 | General Electric Company | Hydrogenation of unsaturated hydrocarbons with cyclometallated transition metal catalysts |
| US4814294A (en) | 1987-07-30 | 1989-03-21 | Allied-Signal Inc. | Method of growing cobalt silicide films by chemical vapor deposition |
| WO1990000260A1 (en) | 1988-06-30 | 1990-01-11 | Raynet Corporation | Optical fiber tap utilizing reflector and cammed closure |
| ATE112790T1 (de) * | 1990-08-08 | 1994-10-15 | Exxon Chemical Patents Inc | Verfahren zur herstellung von geformten expandierbaren teilen. |
| TW209308B (en) * | 1992-03-02 | 1993-07-11 | Digital Equipment Corp | Self-aligned cobalt silicide on MOS integrated circuits |
| US5587651A (en) | 1994-11-21 | 1996-12-24 | General Electric Company | Alternating current sensor based on parallel-plate geometry and having a conductor for providing separate self-powering |
| JPH08202661A (ja) | 1995-01-31 | 1996-08-09 | Matsushita Electric Ind Co Ltd | 携帯端末装置 |
| US5605865A (en) | 1995-04-03 | 1997-02-25 | Motorola Inc. | Method for forming self-aligned silicide in a semiconductor device using vapor phase reaction |
| JPH1045416A (ja) | 1996-07-31 | 1998-02-17 | Sony Corp | コバルトシリサイド膜の形成方法 |
| US5851921A (en) | 1997-04-04 | 1998-12-22 | Advanced Micro Devices, Inc. | Semiconductor device and method for forming the device using a dual layer, self-aligned silicide to enhance contact performance |
| FR2765151A1 (fr) | 1997-06-26 | 1999-01-01 | Michelin & Cie | Armature de sommet pour pneumatique radial |
| KR100296117B1 (ko) | 1998-05-27 | 2001-10-26 | 윤덕용 | 화학기상증착법에의한코발트다이실리사이드콘택형성방법 |
| US6271131B1 (en) * | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
| US7255954B2 (en) * | 1998-08-27 | 2007-08-14 | Cabot Corporation | Energy devices |
| US6239028B1 (en) * | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
| US6037001A (en) | 1998-09-18 | 2000-03-14 | Gelest, Inc. | Method for the chemical vapor deposition of copper-based films |
| JP2000281694A (ja) * | 1999-03-29 | 2000-10-10 | Tanaka Kikinzoku Kogyo Kk | 有機金属気相エピタキシー用の有機金属化合物 |
-
2001
- 2001-06-28 US US09/894,450 patent/US6777565B2/en not_active Expired - Lifetime
- 2001-06-29 WO PCT/US2001/021050 patent/WO2002002574A1/en active IP Right Grant
- 2001-06-29 KR KR1020027017924A patent/KR100795324B1/ko not_active IP Right Cessation
- 2001-06-29 DE DE60118925T patent/DE60118925T2/de not_active Expired - Fee Related
- 2001-06-29 CN CNB018121519A patent/CN100354286C/zh not_active Expired - Fee Related
- 2001-06-29 EP EP01950811A patent/EP1299404B1/de not_active Expired - Lifetime
- 2001-06-29 AT AT01950811T patent/ATE323711T1/de not_active IP Right Cessation
- 2001-06-29 AU AU2001271770A patent/AU2001271770A1/en not_active Abandoned
-
2002
- 2002-11-08 US US10/290,719 patent/US6753245B2/en not_active Expired - Fee Related
-
2004
- 2004-04-19 US US10/827,479 patent/US7507390B2/en not_active Expired - Fee Related
-
2008
- 2008-07-08 US US12/169,211 patent/US20080268151A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20030073860A1 (en) | 2003-04-17 |
| US6777565B2 (en) | 2004-08-17 |
| DE60118925T2 (de) | 2006-12-21 |
| ATE323711T1 (de) | 2006-05-15 |
| EP1299404A1 (de) | 2003-04-09 |
| WO2002002574A1 (en) | 2002-01-10 |
| US20040197470A1 (en) | 2004-10-07 |
| EP1299404B1 (de) | 2006-04-19 |
| CN1440417A (zh) | 2003-09-03 |
| KR100795324B1 (ko) | 2008-01-21 |
| DE60118925D1 (de) | 2006-05-24 |
| US20080268151A1 (en) | 2008-10-30 |
| KR20030028767A (ko) | 2003-04-10 |
| US20020015789A1 (en) | 2002-02-07 |
| US6753245B2 (en) | 2004-06-22 |
| CN100354286C (zh) | 2007-12-12 |
| US7507390B2 (en) | 2009-03-24 |
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