ATE500261T1 - Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis - Google Patents
Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasisInfo
- Publication number
- ATE500261T1 ATE500261T1 AT06301291T AT06301291T ATE500261T1 AT E500261 T1 ATE500261 T1 AT E500261T1 AT 06301291 T AT06301291 T AT 06301291T AT 06301291 T AT06301291 T AT 06301291T AT E500261 T1 ATE500261 T1 AT E500261T1
- Authority
- AT
- Austria
- Prior art keywords
- ruthenium
- production
- coated metal
- based film
- metal electrodes
- Prior art date
Links
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910052707 ruthenium Inorganic materials 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 title abstract 2
- 239000002184 metal Substances 0.000 title abstract 2
- 239000002243 precursor Substances 0.000 title abstract 2
- 150000003304 ruthenium compounds Chemical class 0.000 title 1
- 239000003446 ligand Substances 0.000 abstract 4
- 239000004215 Carbon black (E152) Substances 0.000 abstract 2
- 229930195733 hydrocarbon Natural products 0.000 abstract 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 abstract 2
- 125000002015 acyclic group Chemical group 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 abstract 1
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06301291A EP1935897B1 (de) | 2006-12-22 | 2006-12-22 | Neue organische Rutheniumverbindung, Herstellungsverfahren dafür und Verwendung als Rutheniumvorläufer zur Herstellung von filmbeschichteten Metallelektroden auf Rutheniumbasis |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE500261T1 true ATE500261T1 (de) | 2011-03-15 |
Family
ID=37966462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06301291T ATE500261T1 (de) | 2006-12-22 | 2006-12-22 | Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis |
Country Status (8)
Country | Link |
---|---|
US (1) | US8557339B2 (de) |
EP (1) | EP1935897B1 (de) |
JP (1) | JP5265570B2 (de) |
KR (1) | KR101468238B1 (de) |
AT (1) | ATE500261T1 (de) |
DE (1) | DE602006020470D1 (de) |
TW (1) | TWI426150B (de) |
WO (1) | WO2008078295A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101526633B1 (ko) * | 2008-03-17 | 2015-06-05 | 제이에스알 가부시끼가이샤 | 디루테늄 착체 및 화학 기상 성장의 재료 및 방법 |
DE102008026284A1 (de) | 2008-06-02 | 2009-12-03 | Umicore Ag & Co. Kg | Verfahren zur Herstellung von Ruthenium-Dienyl-Komplexen |
KR20100060482A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 루테늄 금속 또는 루테늄 산화물 박막 증착용 유기 금속 전구체 화합물 및 이를 이용한 박막 증착 방법 |
EP2464652A4 (de) * | 2009-08-14 | 2013-01-09 | Air Liquide | Hafnium- und zirkonium-haltige vorläufer und verwendungsverfahren dafür |
US7893290B1 (en) * | 2010-04-13 | 2011-02-22 | W.C. Heraeus Gmbh | Process for the preparation of bis(pentadienyl)-complexes of iron group metals |
JP5579019B2 (ja) * | 2010-10-25 | 2014-08-27 | Jsr株式会社 | ルテニウム化合物の製造方法 |
TWI610932B (zh) * | 2012-12-07 | 2018-01-11 | 東曹股份有限公司 | 釕錯合物及其製造方法、陽離子性三腈錯合物及其製造方法、以及含釕薄膜的製造方法 |
JP6178638B2 (ja) * | 2013-06-26 | 2017-08-09 | 東ソー株式会社 | ルテニウム錯体及びその製造方法、ルテニウム含有薄膜及びその作製方法 |
KR20140131219A (ko) * | 2013-05-03 | 2014-11-12 | 한국화학연구원 | 루테늄 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
JP5892668B1 (ja) * | 2014-10-03 | 2016-03-23 | 田中貴金属工業株式会社 | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
KR102359908B1 (ko) * | 2019-10-08 | 2022-02-09 | 주식회사 유진테크 | 박막 증착장치 및 박막 증착방법 |
TW202132605A (zh) | 2020-01-10 | 2021-09-01 | 美商應用材料股份有限公司 | 催化劑增強之無縫釕間隙填充 |
KR102618533B1 (ko) * | 2021-03-10 | 2023-12-28 | 한국화학연구원 | 루테늄함유 박막증착용 조성물 및 이를 이용하는 루테늄함유 박막의 제조방법 |
KR102644483B1 (ko) * | 2021-08-06 | 2024-03-07 | 한국화학연구원 | 루테늄 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3384228B2 (ja) | 1996-03-01 | 2003-03-10 | 三菱マテリアル株式会社 | 金属錯体及び金属薄膜形成方法 |
US5962716A (en) | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
US6517616B2 (en) | 1998-08-27 | 2003-02-11 | Micron Technology, Inc. | Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide |
JP4162366B2 (ja) * | 2000-03-31 | 2008-10-08 | 田中貴金属工業株式会社 | Cvd薄膜形成プロセス及びcvd薄膜製造装置 |
EP1282911B1 (de) * | 2000-05-15 | 2018-09-05 | Asm International N.V. | Verfahren zur herstellung integrierter schaltungen |
EP1156055A1 (de) | 2000-05-16 | 2001-11-21 | Firmenich Sa | Herstellung von Ruthenium Verbindungen |
AU2001270502A1 (en) | 2000-05-17 | 2001-11-26 | Basell Technology Company B.V. | Component of catalyst for the diene polymerization, catalyst obtained therefrom and process for the preparation of polydienes based on it |
US6429127B1 (en) | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
US6777565B2 (en) * | 2000-06-29 | 2004-08-17 | Board Of Trustees, The University Of Illinois | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
JP4759126B2 (ja) * | 2000-10-11 | 2011-08-31 | 田中貴金属工業株式会社 | 化学気相蒸着用の有機金属化合物及び化学気相蒸着用の有機金属化合物の製造方法並びに貴金属薄膜及び貴金属化合物薄膜の化学気相蒸着方法 |
JP4517565B2 (ja) * | 2001-09-12 | 2010-08-04 | 東ソー株式会社 | ルテニウム錯体、その製造方法、及び薄膜の製造方法 |
JP2005060814A (ja) | 2002-12-03 | 2005-03-10 | Jsr Corp | ルテニウム化合物および金属ルテニウム膜の製造法 |
JP2004292332A (ja) | 2003-03-26 | 2004-10-21 | Mitsubishi Materials Corp | ルテニウム化合物の製造方法並びに該化合物により得られたルテニウム含有薄膜 |
WO2005103318A1 (en) | 2004-02-04 | 2005-11-03 | Praxair Technology, Inc. | High nucleation density organometallic compounds |
US20060024190A1 (en) | 2004-07-27 | 2006-02-02 | General Electric Company | Preparation of filler-metal weld rod by injection molding of powder |
KR100636023B1 (ko) * | 2005-08-02 | 2006-10-18 | 삼성전자주식회사 | 유기금속 전구체 및 이를 이용한 박막 제조방법 |
US7667065B2 (en) * | 2006-08-02 | 2010-02-23 | Praxair Technology, Inc. | High nucleation density organometallic compounds |
US20080171436A1 (en) * | 2007-01-11 | 2008-07-17 | Asm Genitech Korea Ltd. | Methods of depositing a ruthenium film |
US20090205538A1 (en) * | 2008-01-24 | 2009-08-20 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
JP5549848B2 (ja) * | 2008-12-25 | 2014-07-16 | 東ソー株式会社 | ルテニウム化合物、その製法及びそれを用いた成膜法 |
-
2006
- 2006-12-22 AT AT06301291T patent/ATE500261T1/de not_active IP Right Cessation
- 2006-12-22 DE DE602006020470T patent/DE602006020470D1/de active Active
- 2006-12-22 EP EP06301291A patent/EP1935897B1/de not_active Not-in-force
-
2007
- 2007-12-19 TW TW096148584A patent/TWI426150B/zh active
- 2007-12-20 JP JP2009542378A patent/JP5265570B2/ja active Active
- 2007-12-20 US US12/520,116 patent/US8557339B2/en active Active
- 2007-12-20 WO PCT/IB2007/055258 patent/WO2008078295A1/en active Application Filing
- 2007-12-20 KR KR1020097012741A patent/KR101468238B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI426150B (zh) | 2014-02-11 |
TW200844252A (en) | 2008-11-16 |
KR20090092286A (ko) | 2009-08-31 |
JP5265570B2 (ja) | 2013-08-14 |
JP2010513467A (ja) | 2010-04-30 |
US8557339B2 (en) | 2013-10-15 |
EP1935897B1 (de) | 2011-03-02 |
WO2008078295A1 (en) | 2008-07-03 |
KR101468238B1 (ko) | 2014-12-03 |
EP1935897A1 (de) | 2008-06-25 |
DE602006020470D1 (de) | 2011-04-14 |
US20100034971A1 (en) | 2010-02-11 |
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