ATE500261T1 - Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis - Google Patents

Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis

Info

Publication number
ATE500261T1
ATE500261T1 AT06301291T AT06301291T ATE500261T1 AT E500261 T1 ATE500261 T1 AT E500261T1 AT 06301291 T AT06301291 T AT 06301291T AT 06301291 T AT06301291 T AT 06301291T AT E500261 T1 ATE500261 T1 AT E500261T1
Authority
AT
Austria
Prior art keywords
ruthenium
production
coated metal
based film
metal electrodes
Prior art date
Application number
AT06301291T
Other languages
English (en)
Inventor
Christian Dussarrat
Julien Gatineau
Original Assignee
Air Liquide
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide filed Critical Air Liquide
Application granted granted Critical
Publication of ATE500261T1 publication Critical patent/ATE500261T1/de

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/0046Ruthenium compounds
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AT06301291T 2006-12-22 2006-12-22 Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis ATE500261T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06301291A EP1935897B1 (de) 2006-12-22 2006-12-22 Neue organische Rutheniumverbindung, Herstellungsverfahren dafür und Verwendung als Rutheniumvorläufer zur Herstellung von filmbeschichteten Metallelektroden auf Rutheniumbasis

Publications (1)

Publication Number Publication Date
ATE500261T1 true ATE500261T1 (de) 2011-03-15

Family

ID=37966462

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06301291T ATE500261T1 (de) 2006-12-22 2006-12-22 Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis

Country Status (8)

Country Link
US (1) US8557339B2 (de)
EP (1) EP1935897B1 (de)
JP (1) JP5265570B2 (de)
KR (1) KR101468238B1 (de)
AT (1) ATE500261T1 (de)
DE (1) DE602006020470D1 (de)
TW (1) TWI426150B (de)
WO (1) WO2008078295A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526633B1 (ko) * 2008-03-17 2015-06-05 제이에스알 가부시끼가이샤 디루테늄 착체 및 화학 기상 성장의 재료 및 방법
DE102008026284A1 (de) 2008-06-02 2009-12-03 Umicore Ag & Co. Kg Verfahren zur Herstellung von Ruthenium-Dienyl-Komplexen
KR20100060482A (ko) * 2008-11-27 2010-06-07 주식회사 유피케미칼 루테늄 금속 또는 루테늄 산화물 박막 증착용 유기 금속 전구체 화합물 및 이를 이용한 박막 증착 방법
EP2464652A4 (de) * 2009-08-14 2013-01-09 Air Liquide Hafnium- und zirkonium-haltige vorläufer und verwendungsverfahren dafür
US7893290B1 (en) * 2010-04-13 2011-02-22 W.C. Heraeus Gmbh Process for the preparation of bis(pentadienyl)-complexes of iron group metals
JP5579019B2 (ja) * 2010-10-25 2014-08-27 Jsr株式会社 ルテニウム化合物の製造方法
TWI610932B (zh) * 2012-12-07 2018-01-11 東曹股份有限公司 釕錯合物及其製造方法、陽離子性三腈錯合物及其製造方法、以及含釕薄膜的製造方法
JP6178638B2 (ja) * 2013-06-26 2017-08-09 東ソー株式会社 ルテニウム錯体及びその製造方法、ルテニウム含有薄膜及びその作製方法
KR20140131219A (ko) * 2013-05-03 2014-11-12 한국화학연구원 루테늄 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법
JP5892668B1 (ja) * 2014-10-03 2016-03-23 田中貴金属工業株式会社 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
KR102359908B1 (ko) * 2019-10-08 2022-02-09 주식회사 유진테크 박막 증착장치 및 박막 증착방법
TW202132605A (zh) 2020-01-10 2021-09-01 美商應用材料股份有限公司 催化劑增強之無縫釕間隙填充
KR102618533B1 (ko) * 2021-03-10 2023-12-28 한국화학연구원 루테늄함유 박막증착용 조성물 및 이를 이용하는 루테늄함유 박막의 제조방법
KR102644483B1 (ko) * 2021-08-06 2024-03-07 한국화학연구원 루테늄 유기금속화합물, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법

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US5962716A (en) 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6517616B2 (en) 1998-08-27 2003-02-11 Micron Technology, Inc. Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
JP4162366B2 (ja) * 2000-03-31 2008-10-08 田中貴金属工業株式会社 Cvd薄膜形成プロセス及びcvd薄膜製造装置
EP1282911B1 (de) * 2000-05-15 2018-09-05 Asm International N.V. Verfahren zur herstellung integrierter schaltungen
EP1156055A1 (de) 2000-05-16 2001-11-21 Firmenich Sa Herstellung von Ruthenium Verbindungen
AU2001270502A1 (en) 2000-05-17 2001-11-26 Basell Technology Company B.V. Component of catalyst for the diene polymerization, catalyst obtained therefrom and process for the preparation of polydienes based on it
US6429127B1 (en) 2000-06-08 2002-08-06 Micron Technology, Inc. Methods for forming rough ruthenium-containing layers and structures/methods using same
US6777565B2 (en) * 2000-06-29 2004-08-17 Board Of Trustees, The University Of Illinois Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
JP4759126B2 (ja) * 2000-10-11 2011-08-31 田中貴金属工業株式会社 化学気相蒸着用の有機金属化合物及び化学気相蒸着用の有機金属化合物の製造方法並びに貴金属薄膜及び貴金属化合物薄膜の化学気相蒸着方法
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JP5549848B2 (ja) * 2008-12-25 2014-07-16 東ソー株式会社 ルテニウム化合物、その製法及びそれを用いた成膜法

Also Published As

Publication number Publication date
TWI426150B (zh) 2014-02-11
TW200844252A (en) 2008-11-16
KR20090092286A (ko) 2009-08-31
JP5265570B2 (ja) 2013-08-14
JP2010513467A (ja) 2010-04-30
US8557339B2 (en) 2013-10-15
EP1935897B1 (de) 2011-03-02
WO2008078295A1 (en) 2008-07-03
KR101468238B1 (ko) 2014-12-03
EP1935897A1 (de) 2008-06-25
DE602006020470D1 (de) 2011-04-14
US20100034971A1 (en) 2010-02-11

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