AU2001258089A1 - Matchline sense circuit and method - Google Patents

Matchline sense circuit and method

Info

Publication number
AU2001258089A1
AU2001258089A1 AU2001258089A AU5808901A AU2001258089A1 AU 2001258089 A1 AU2001258089 A1 AU 2001258089A1 AU 2001258089 A AU2001258089 A AU 2001258089A AU 5808901 A AU5808901 A AU 5808901A AU 2001258089 A1 AU2001258089 A1 AU 2001258089A1
Authority
AU
Australia
Prior art keywords
sense circuit
matchline sense
matchline
circuit
sense
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001258089A
Other languages
English (en)
Inventor
Abdullah Ahmed
Peter Gillingham
Valerie Lines
Peter P. Ma
Stanley Jeh-Chun Ma
Robert Mckenzie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of AU2001258089A1 publication Critical patent/AU2001258089A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
AU2001258089A 2000-05-01 2001-05-01 Matchline sense circuit and method Abandoned AU2001258089A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA2307240A CA2307240C (fr) 2000-05-01 2000-05-01 Circuit de detection de ligne d'adaptation et methode connexe
CA2307240 2000-05-01
PCT/CA2001/000628 WO2001084555A1 (fr) 2000-05-01 2001-05-01 Circuit et procede de detection de lignes de correspondance

Publications (1)

Publication Number Publication Date
AU2001258089A1 true AU2001258089A1 (en) 2001-11-12

Family

ID=4166037

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001258089A Abandoned AU2001258089A1 (en) 2000-05-01 2001-05-01 Matchline sense circuit and method

Country Status (8)

Country Link
US (3) US6987682B2 (fr)
KR (1) KR100718902B1 (fr)
CN (1) CN1251242C (fr)
AU (1) AU2001258089A1 (fr)
CA (1) CA2307240C (fr)
DE (1) DE10196141T1 (fr)
GB (1) GB2379541B (fr)
WO (1) WO2001084555A1 (fr)

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US7257763B1 (en) 2001-08-03 2007-08-14 Netlogic Microsystems, Inc. Content addressable memory with error signaling
US7043673B1 (en) 2001-08-03 2006-05-09 Netlogic Microsystems, Inc. Content addressable memory with priority-biased error detection sequencing
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US7301961B1 (en) 2001-12-27 2007-11-27 Cypress Semiconductor Corportion Method and apparatus for configuring signal lines according to idle codes
KR100435804B1 (ko) * 2002-06-28 2004-06-10 삼성전자주식회사 터너리 내용 주소화 메모리 장치
US6704216B1 (en) * 2002-08-15 2004-03-09 Integrated Silicon Solution, Inc. Dual match-line, twin-cell, binary-ternary CAM
US7006368B2 (en) 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
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KR101149816B1 (ko) * 2004-05-28 2012-05-25 삼성전자주식회사 캐쉬 메모리의 캐쉬 히트 로직
US7304873B1 (en) 2005-01-25 2007-12-04 Netlogic Microsystems, Inc. Method for on-the-fly error correction in a content addressable memory (CAM) and device therefor
US7372713B2 (en) * 2006-04-17 2008-05-13 Texas Instruments Incorporated Match sensing circuit for a content addressable memory device
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US7471537B1 (en) 2006-06-23 2008-12-30 Integrated Device Technology, Ltd. Content addressable memories (CAM) having low power dynamic match line sensing circuits therein
US7391633B2 (en) * 2006-07-26 2008-06-24 Agere Systems Inc. Accelerated searching for content-addressable memory
US7474546B2 (en) 2007-04-02 2009-01-06 Sun Microsystems, Inc. Hybrid dual match line architecture for content addressable memories and other data structures
US7548365B2 (en) * 2007-06-06 2009-06-16 Texas Instruments Incorporated Semiconductor device and method comprising a high voltage reset driver and an isolated memory array
US20090129185A1 (en) * 2007-11-19 2009-05-21 Cassels John J Semiconductor circuits capable of self detecting defects
US7903461B2 (en) * 2008-09-22 2011-03-08 Micron Technology, Inc. Sensing for memory read and program verify operations in a non-volatile memory device
US8493764B2 (en) * 2011-02-10 2013-07-23 Lsi Corporation High density CAM array architectures with adaptive current controlled match-line discharge
US8990631B1 (en) 2011-03-03 2015-03-24 Netlogic Microsystems, Inc. Packet format for error reporting in a content addressable memory
CN103597545B (zh) * 2011-06-09 2016-10-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
CN102522106B (zh) * 2011-12-13 2014-04-23 北京大学 高速低功耗wta灵敏放大器
CN102998607A (zh) * 2012-11-29 2013-03-27 上海集成电路研发中心有限公司 一种测量和表征mos晶体管器件失配特性的方法及系统
JP6767873B2 (ja) * 2014-11-21 2020-10-14 シャープ株式会社 アクティブマトリクス基板、及びそれを備えた表示装置
US9704575B1 (en) 2016-01-07 2017-07-11 Globalfoundries Inc. Content-addressable memory having multiple reference matchlines to reduce latency
US9583192B1 (en) * 2016-05-25 2017-02-28 Globalfoundries Inc. Matchline precharge architecture for self-reference matchline sensing
US9859006B1 (en) * 2016-06-17 2018-01-02 Globalfoundries Inc. Algorithmic N search/M write ternary content addressable memory (TCAM)
US10937475B1 (en) * 2019-10-24 2021-03-02 Renesas Elelctronics Corporation Content addressable memory
US11651819B2 (en) * 2020-07-24 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of operating the same
CN111933198B (zh) * 2020-09-14 2021-02-05 新华三半导体技术有限公司 内容寻址存储器cam的匹配线检测电路
CN113113075B (zh) * 2021-06-11 2021-08-27 新华三半导体技术有限公司 芯片测试方法、装置、控制电路和芯片
CN114567837B (zh) * 2022-02-28 2024-04-26 歌尔微电子股份有限公司 传感器麦克风输出保护电路及传感器麦克风
TWI809944B (zh) * 2022-06-22 2023-07-21 旺宏電子股份有限公司 用以進行記憶體內搜尋之混和型內容可定址記憶體及其運作方法
TWI827137B (zh) * 2022-07-13 2023-12-21 旺宏電子股份有限公司 用於記憶體內搜尋的記憶體裝置及資料搜尋方法

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US4445201A (en) * 1981-11-30 1984-04-24 International Business Machines Corporation Simple amplifying system for a dense memory array
WO1989008314A1 (fr) * 1988-02-23 1989-09-08 Mitsubishi Denki Kabushiki Kaisha Memoire adressable en fonction du contenu
US5270591A (en) * 1992-02-28 1993-12-14 Xerox Corporation Content addressable memory architecture and circuits
US5446685A (en) * 1993-02-23 1995-08-29 Intergraph Corporation Pulsed ground circuit for CAM and PAL memories
JP3117375B2 (ja) * 1994-11-28 2000-12-11 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 連想メモリの制御回路及び連想メモリ装置
US5754463A (en) * 1996-07-15 1998-05-19 Intel Corporation Multi-ported content addressable memory with precharge "non match"
US6125049A (en) * 1999-01-05 2000-09-26 Netlogic Microsystems, Inc. Match line control circuit for content addressable memory
US6044005A (en) * 1999-02-03 2000-03-28 Sibercore Technologies Incorporated Content addressable memory storage device
JP3478749B2 (ja) * 1999-02-05 2003-12-15 インターナショナル・ビジネス・マシーンズ・コーポレーション 連想メモリ（ｃａｍ）のワードマッチラインのプリチャージ回路および方法
CA2266062C (fr) * 1999-03-31 2004-03-30 Peter Gillingham Cellule memoire dynamique adressable par son contenu
US6317349B1 (en) * 1999-04-16 2001-11-13 Sandisk Corporation Non-volatile content addressable memory
CA2273665A1 (fr) * 1999-06-07 2000-12-07 Mosaid Technologies Incorporated Amplificateur differentiel de detection pour memoire adressable par le contenu
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
CA2299991A1 (fr) * 2000-03-03 2001-09-03 Mosaid Technologies Incorporated Cellule memoire pour memoire imbriquee
CA2310295C (fr) * 2000-05-31 2010-10-05 Mosaid Technologies Incorporated Circuit et methode de detection de concordance multiple
US6373738B1 (en) * 2000-11-20 2002-04-16 International Business Machines Corporation Low power CAM match line circuit
US6430073B1 (en) * 2000-12-06 2002-08-06 International Business Machines Corporation Dram CAM cell with hidden refresh
US6442054B1 (en) * 2001-05-24 2002-08-27 Integrated Device Technology, Inc. Sense amplifier for content addressable memory
US6708250B2 (en) * 2001-09-28 2004-03-16 Mosaid Technologies Incorporated Circuit and method for performing variable width searches in a content addressable memory
CA2365891C (fr) * 2001-10-31 2012-03-13 Mosaid Technologies Incorporated Circuit et methode de codage prioritaire pour memoire auto-associative
US6584003B1 (en) * 2001-12-28 2003-06-24 Mosaid Technologies Incorporated Low power content addressable memory architecture
US6768659B2 (en) * 2001-12-31 2004-07-27 Mosaid Technologies Incorporated Circuit and method for reducing power usage in a content addressable memory
US6836419B2 (en) * 2002-08-23 2004-12-28 Micron Technology, Inc. Split word line ternary CAM architecture
US6775166B2 (en) * 2002-08-30 2004-08-10 Mosaid Technologies, Inc. Content addressable memory architecture
US7006368B2 (en) * 2002-11-07 2006-02-28 Mosaid Technologies Incorporated Mismatch-dependent power allocation technique for match-line sensing in content-addressable memories
US7136961B2 (en) * 2002-11-13 2006-11-14 Mosaid Technologies, Inc. Method and apparatus for wide word deletion in content addressable memories
JP4282319B2 (ja) * 2002-12-13 2009-06-17 株式会社ルネサステクノロジ 半導体記憶装置

Also Published As

Publication number Publication date
CN1439160A (zh) 2003-08-27
DE10196141T1 (de) 2003-04-30
GB0225063D0 (en) 2002-12-04
US20060083041A1 (en) 2006-04-20
GB2379541A (en) 2003-03-12
US20070258277A1 (en) 2007-11-08
CA2307240C (fr) 2011-04-12
GB2379541B (en) 2004-11-17
US7251148B2 (en) 2007-07-31
CA2307240A1 (fr) 2001-11-01
US6987682B2 (en) 2006-01-17
US20030161194A1 (en) 2003-08-28
US7382638B2 (en) 2008-06-03
KR20030014210A (ko) 2003-02-15
CN1251242C (zh) 2006-04-12
KR100718902B1 (ko) 2007-05-17
WO2001084555A1 (fr) 2001-11-08

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