ATE83089T1 - Photoelektrisches umsetzungselement. - Google Patents

Photoelektrisches umsetzungselement.

Info

Publication number
ATE83089T1
ATE83089T1 AT83305333T AT83305333T ATE83089T1 AT E83089 T1 ATE83089 T1 AT E83089T1 AT 83305333 T AT83305333 T AT 83305333T AT 83305333 T AT83305333 T AT 83305333T AT E83089 T1 ATE83089 T1 AT E83089T1
Authority
AT
Austria
Prior art keywords
separate electrodes
photoelectric conversion
layer
photoelectric
row
Prior art date
Application number
AT83305333T
Other languages
English (en)
Inventor
Tamio Saito
Kouhei Suzuki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Application granted granted Critical
Publication of ATE83089T1 publication Critical patent/ATE83089T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Holo Graphy (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Lubrication Of Internal Combustion Engines (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT83305333T 1982-11-01 1983-09-13 Photoelektrisches umsetzungselement. ATE83089T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP57190799A JPS5980964A (ja) 1982-11-01 1982-11-01 光電変換素子
EP83305333A EP0108480B1 (de) 1982-11-01 1983-09-13 Photoelektrisches Umsetzungselement

Publications (1)

Publication Number Publication Date
ATE83089T1 true ATE83089T1 (de) 1992-12-15

Family

ID=16263928

Family Applications (1)

Application Number Title Priority Date Filing Date
AT83305333T ATE83089T1 (de) 1982-11-01 1983-09-13 Photoelektrisches umsetzungselement.

Country Status (5)

Country Link
US (1) US4672221A (de)
EP (1) EP0108480B1 (de)
JP (1) JPS5980964A (de)
AT (1) ATE83089T1 (de)
DE (1) DE3382645T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4894700A (en) * 1985-04-09 1990-01-16 Fuji Xerox Co., Ltd. Image sensor
JPH0669040B2 (ja) * 1985-05-13 1994-08-31 株式会社東芝 光半導体装置
JPS62112382A (ja) * 1985-11-12 1987-05-23 Toshiba Corp 半導体受光装置
US4803375A (en) * 1985-12-27 1989-02-07 Kabushiki Kaisha Toshiba Image sensors and methods of manufacturing same including semiconductor layer over entire substrate surface
JPS62154780A (ja) * 1985-12-27 1987-07-09 Toshiba Corp イメ−ジセンサ
DE3650362T2 (de) * 1986-01-06 1996-01-25 Sel Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.
DE3705173A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung
DE3706278A1 (de) * 1986-02-28 1987-09-03 Canon Kk Halbleitervorrichtung und herstellungsverfahren hierfuer
JPH0740711B2 (ja) * 1986-06-20 1995-05-01 キヤノン株式会社 光センサの駆動方法及び画像入力装置
US5097304A (en) * 1986-10-07 1992-03-17 Canon Kabushiki Kaisha Image reading device with voltage biases
US4855802A (en) * 1986-10-20 1989-08-08 Fuji Electric Co., Ltd. Contact type image sensor
JPH0724302B2 (ja) * 1987-05-01 1995-03-15 富士ゼロックス株式会社 密着型イメージセンサの製造方法
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
JPH0193165A (ja) * 1987-10-02 1989-04-12 Ricoh Co Ltd 密着型イメージセンサ
JPH088624B2 (ja) * 1988-03-14 1996-01-29 株式会社日立製作所 完全密着型読取センサ及び読取センサアセンブリ
JPH03504658A (ja) * 1988-08-25 1991-10-09 イーストマン・コダック・カンパニー 汚れの少ない画像検出デバイス
JP3031756B2 (ja) * 1990-08-02 2000-04-10 キヤノン株式会社 光電変換装置
US5075172A (en) * 1991-04-10 1991-12-24 Cape Cod Research Electroluminescent electrode made of a tris bipyridyl ruthenium complex embedded in a perfluorinated polymer and deposited on a transparent electrode
JPH05160379A (ja) * 1991-12-06 1993-06-25 Fuji Xerox Co Ltd イメージセンサ及び画像読取装置
SG44406A1 (en) * 1992-03-10 1997-12-19 Mitsui Toatsu Chemicals Circuit board for optical element
JP3180748B2 (ja) * 1997-12-11 2001-06-25 日本電気株式会社 固体撮像装置
JP5288823B2 (ja) * 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
JP2015012059A (ja) * 2013-06-27 2015-01-19 ソニー株式会社 固体撮像素子及びその製造方法、並びに撮像装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact
US3704375A (en) * 1970-05-05 1972-11-28 Barnes Eng Co Monolithic detector construction of photodetectors
DE2536350A1 (de) * 1975-08-14 1977-02-24 Siemens Ag Verfahren zum partiellen abdecken von halbleiteranordnungen mit einer lichtundurchlaessigen schicht
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
JPS52144992A (en) * 1976-05-28 1977-12-02 Hitachi Ltd Light receiving element
US4200892A (en) * 1978-03-27 1980-04-29 Rca Corporation Solid state image sensor
US4412236A (en) * 1979-08-24 1983-10-25 Hitachi, Ltd. Color solid-state imager
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
US4354104A (en) * 1980-05-06 1982-10-12 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device
US4484223A (en) * 1980-06-12 1984-11-20 Canon Kabushiki Kaisha Image sensor
JPS5721163A (en) * 1980-07-14 1982-02-03 Hitachi Ltd Optical sensor array device
DE3177297T2 (de) * 1980-12-10 1993-06-03 Fuji Xerox Co Ltd Laenglicher duennfilm-lesesensor.
JPS57157563A (en) * 1981-03-24 1982-09-29 Toshiba Corp Semiconductor device
JPS57167002A (en) * 1981-04-07 1982-10-14 Minolta Camera Co Ltd Focus detecting element
US4430564A (en) * 1981-06-08 1984-02-07 Triumph-Adler A.G. Fur Buround Informationstechnik Image conversion apparatus with gas discharge switching
JPS5887862A (ja) * 1981-11-20 1983-05-25 Fuji Xerox Co Ltd 長尺一次元薄膜センサ

Also Published As

Publication number Publication date
US4672221A (en) 1987-06-09
EP0108480B1 (de) 1992-12-02
DE3382645T2 (de) 1993-05-06
EP0108480A3 (en) 1986-07-16
EP0108480A2 (de) 1984-05-16
DE3382645D1 (de) 1993-01-14
JPS5980964A (ja) 1984-05-10

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