ATE555236T1 - Glasartiger quarztiegel und verfahren zum ziehen von einkristall-silicium - Google Patents

Glasartiger quarztiegel und verfahren zum ziehen von einkristall-silicium

Info

Publication number
ATE555236T1
ATE555236T1 AT08020715T AT08020715T ATE555236T1 AT E555236 T1 ATE555236 T1 AT E555236T1 AT 08020715 T AT08020715 T AT 08020715T AT 08020715 T AT08020715 T AT 08020715T AT E555236 T1 ATE555236 T1 AT E555236T1
Authority
AT
Austria
Prior art keywords
crystal silicon
crucial
single crystal
liquid
growing single
Prior art date
Application number
AT08020715T
Other languages
English (en)
Inventor
Hiroshi Kishi
Minoru Kanda
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Application granted granted Critical
Publication of ATE555236T1 publication Critical patent/ATE555236T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
AT08020715T 2007-12-28 2008-11-28 Glasartiger quarztiegel und verfahren zum ziehen von einkristall-silicium ATE555236T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007339345A JP4995068B2 (ja) 2007-12-28 2007-12-28 シリコン単結晶引上げ用石英ガラスルツボ

Publications (1)

Publication Number Publication Date
ATE555236T1 true ATE555236T1 (de) 2012-05-15

Family

ID=40139188

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08020715T ATE555236T1 (de) 2007-12-28 2008-11-28 Glasartiger quarztiegel und verfahren zum ziehen von einkristall-silicium

Country Status (4)

Country Link
US (1) US8142565B2 (de)
EP (1) EP2075354B1 (de)
JP (1) JP4995068B2 (de)
AT (1) ATE555236T1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4994647B2 (ja) * 2005-11-30 2012-08-08 ジャパンスーパークォーツ株式会社 結晶化し易い石英ガラス部材とその用途
JP4995068B2 (ja) * 2007-12-28 2012-08-08 ジャパンスーパークォーツ株式会社 シリコン単結晶引上げ用石英ガラスルツボ
JP5058138B2 (ja) * 2008-12-09 2012-10-24 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
JP4987029B2 (ja) * 2009-04-02 2012-07-25 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
JP5453677B2 (ja) * 2010-06-25 2014-03-26 株式会社Ｓｕｍｃｏ シリカガラスルツボ、シリコンインゴットの製造方法
EP2799596B1 (de) * 2011-12-30 2018-08-22 Sumco Corporation Quarzglastiegel und verfahren zur herstellung von monokristallinem silicium damit
JP5308594B1 (ja) * 2012-01-13 2013-10-09 信越石英株式会社 単結晶シリコン引き上げ用シリカ容器及びその製造方法
EP2712946A4 (de) * 2012-05-15 2015-03-25 Shinetsu Quartz Prod Quarzglastiegel zur züchtung von einkristallinem silicium sowie verfahren zu seiner herstellung
SG10201709699RA (en) * 2013-05-23 2017-12-28 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
KR102060422B1 (ko) * 2015-11-02 2019-12-30 가부시키가이샤 사무코 단결정 실리콘의 제조 방법
CN114457421A (zh) * 2021-12-21 2022-05-10 弘元新材料(包头)有限公司 一种单晶硅生产用增加投料量的装置及其使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61242984A (ja) * 1985-04-19 1986-10-29 Shinetsu Sekiei Kk シリコン単結晶引上げ用ルツボ
JPH068237B2 (ja) * 1988-04-28 1994-02-02 三菱マテリアル株式会社 シリコン単結晶引上げ用石英ルツボ
JPH0764673B2 (ja) * 1990-01-10 1995-07-12 三菱マテリアル株式会社 石英ルツボの製造方法
JPH10182287A (ja) * 1996-12-19 1998-07-07 Nippon Steel Corp シリコン単結晶製造方法および石英ルツボ
JP4138959B2 (ja) * 1998-08-28 2008-08-27 信越石英株式会社 シリコン単結晶引き上げ用大口径石英ガラスるつぼ及びその製造方法
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
US20060191294A1 (en) * 2003-03-21 2006-08-31 Heraeus Tenevo Gmbh Synthetic silica glass tube for the production of a preform, method for producing the same in a vertical drawing process and use of said tube
EP2484814A1 (de) * 2003-05-01 2012-08-08 Heraeus Quarzglas GmbH & Co. KG Quarzglastiegel zur Siliziumeinkristallzüchtung und Verfahren für dessen Herstellung
JP2005067910A (ja) 2003-08-25 2005-03-17 Japan Siper Quarts Corp シリコン単結晶引き上げ用石英ルツボとその製造方法および引き上げ方法
JP2005330157A (ja) * 2004-05-20 2005-12-02 Toshiba Ceramics Co Ltd シリカガラスルツボ
JP4678667B2 (ja) * 2004-06-07 2011-04-27 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
JP2007091562A (ja) * 2005-09-30 2007-04-12 Toshiba Ceramics Co Ltd 結晶化促進コーティング用シリカガラスルツボ
JP4671999B2 (ja) * 2007-11-30 2011-04-20 ジャパンスーパークォーツ株式会社 石英ガラスルツボの試験方法
JP4995068B2 (ja) * 2007-12-28 2012-08-08 ジャパンスーパークォーツ株式会社 シリコン単結晶引上げ用石英ガラスルツボ
JP4922233B2 (ja) * 2008-04-30 2012-04-25 ジャパンスーパークォーツ株式会社 石英ガラスルツボ

Also Published As

Publication number Publication date
US20090165701A1 (en) 2009-07-02
JP2009161363A (ja) 2009-07-23
EP2075354B1 (de) 2012-04-25
US8142565B2 (en) 2012-03-27
EP2075354A2 (de) 2009-07-01
JP4995068B2 (ja) 2012-08-08
EP2075354A3 (de) 2010-08-11

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