ATE551834T1 - Verfahren und vorrichtung zum unterdrücken des dunkelstroms und der verschleierung in einem 4t- cmos-abbildungseinrichtungs-pixel - Google Patents
Verfahren und vorrichtung zum unterdrücken des dunkelstroms und der verschleierung in einem 4t- cmos-abbildungseinrichtungs-pixelInfo
- Publication number
- ATE551834T1 ATE551834T1 AT06769978T AT06769978T ATE551834T1 AT E551834 T1 ATE551834 T1 AT E551834T1 AT 06769978 T AT06769978 T AT 06769978T AT 06769978 T AT06769978 T AT 06769978T AT E551834 T1 ATE551834 T1 AT E551834T1
- Authority
- AT
- Austria
- Prior art keywords
- focusing
- imaging device
- dark current
- cmos imaging
- device pixel
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000003384 imaging method Methods 0.000 title 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/121,119 US7851798B2 (en) | 2005-05-04 | 2005-05-04 | Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel |
PCT/US2006/016917 WO2006119333A1 (en) | 2005-05-04 | 2006-05-02 | Method and apparatus for dark current and blooming suppression in 4t cmos imager pixel |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE551834T1 true ATE551834T1 (de) | 2012-04-15 |
Family
ID=36694584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06769978T ATE551834T1 (de) | 2005-05-04 | 2006-05-02 | Verfahren und vorrichtung zum unterdrücken des dunkelstroms und der verschleierung in einem 4t- cmos-abbildungseinrichtungs-pixel |
Country Status (8)
Country | Link |
---|---|
US (3) | US7851798B2 (de) |
EP (1) | EP1878216B1 (de) |
JP (1) | JP4501121B2 (de) |
KR (1) | KR101142592B1 (de) |
CN (1) | CN101171828B (de) |
AT (1) | ATE551834T1 (de) |
TW (1) | TWI320659B (de) |
WO (1) | WO2006119333A1 (de) |
Families Citing this family (27)
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US7829832B2 (en) * | 2005-08-30 | 2010-11-09 | Aptina Imaging Corporation | Method for operating a pixel cell using multiple pulses to a transistor transfer gate |
JP5016941B2 (ja) * | 2007-02-08 | 2012-09-05 | 株式会社東芝 | 固体撮像装置 |
FR2915652B1 (fr) * | 2007-04-27 | 2009-06-12 | St Microelectronics Sa | Procede de commande d'un capteur d'images |
US7969494B2 (en) | 2007-05-21 | 2011-06-28 | Aptina Imaging Corporation | Imager and system utilizing pixel with internal reset control and method of operating same |
KR101437912B1 (ko) * | 2007-11-19 | 2014-09-05 | 삼성전자주식회사 | 이미지 센서의 구동 방법 |
US7763837B2 (en) * | 2007-11-20 | 2010-07-27 | Aptina Imaging Corporation | Method and apparatus for controlling anti-blooming timing to reduce effects of dark current |
JP4494492B2 (ja) * | 2008-04-09 | 2010-06-30 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
CN101561990B (zh) * | 2008-04-18 | 2011-06-29 | 群康科技(深圳)有限公司 | 光电薄膜晶体管的驱动方法、光电传感器及平面显示器 |
US8093541B2 (en) * | 2008-06-05 | 2012-01-10 | Aptina Imaging Corporation | Anti-blooming protection of pixels in a pixel array for multiple scaling modes |
JP5625284B2 (ja) * | 2009-08-10 | 2014-11-19 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および電子機器 |
US9103724B2 (en) | 2010-11-30 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device |
KR101294445B1 (ko) | 2011-04-13 | 2013-08-07 | 엘지이노텍 주식회사 | 픽셀, 픽셀 어레이, 픽셀 어레이를 포함하는 이미지센서 및 픽셀 어레이의 구동방법 |
KR101294386B1 (ko) * | 2011-04-13 | 2013-08-08 | 엘지이노텍 주식회사 | 픽셀, 픽셀 어레이 및 픽셀 어레이를 포함하는 이미지센서 |
JP2013016675A (ja) * | 2011-07-05 | 2013-01-24 | Sony Corp | 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 |
CN102354698B (zh) * | 2011-09-28 | 2015-11-25 | 上海华虹宏力半导体制造有限公司 | 实现高动态cmos图像传感器的方法 |
CN102523393B (zh) * | 2011-12-30 | 2014-02-26 | 中国科学院上海高等研究院 | 金属氧化物半导体图像传感器 |
CN102523391B (zh) * | 2011-12-31 | 2015-03-25 | 中国科学院上海高等研究院 | Cmos图像传感器 |
CN102547159B (zh) * | 2012-02-16 | 2014-01-22 | 中国科学院上海高等研究院 | 高动态范围图像传感器及其控制方法 |
KR101414202B1 (ko) * | 2012-10-31 | 2014-07-01 | 주식회사 동부하이텍 | 이미지 센서 |
FR3002691B1 (fr) * | 2013-02-28 | 2016-10-28 | E2V Semiconductors | Capteur d'image avec grille d'anti-eblouissement |
US9516248B2 (en) | 2013-03-15 | 2016-12-06 | Microsoft Technology Licensing, Llc | Photosensor having enhanced sensitivity |
WO2015187884A1 (en) * | 2014-06-06 | 2015-12-10 | Rambus Inc. | Image sensor with depletion-level pixel charge transfer control |
KR101679598B1 (ko) * | 2016-01-04 | 2016-11-25 | 주식회사 동부하이텍 | 이미지 센서 |
JP6947160B2 (ja) * | 2016-02-29 | 2021-10-13 | ソニーグループ株式会社 | 固体撮像素子 |
JP7073035B2 (ja) | 2016-08-29 | 2022-05-23 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
CN111403426A (zh) * | 2018-12-28 | 2020-07-10 | 天津大学青岛海洋技术研究院 | 一种降低扩散暗电流的cmos图像传感器像素结构 |
KR20220019548A (ko) | 2020-08-10 | 2022-02-17 | 삼성전자주식회사 | 이미지 센서 |
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US6452632B1 (en) * | 1997-01-31 | 2002-09-17 | Kabushiki Kaisha Toshiba | Solid state image sensor and video system using the same |
US6140630A (en) * | 1998-10-14 | 2000-10-31 | Micron Technology, Inc. | Vcc pump for CMOS imagers |
US6177333B1 (en) * | 1999-01-14 | 2001-01-23 | Micron Technology, Inc. | Method for making a trench isolation for semiconductor devices |
US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
US6326652B1 (en) * | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
US6333205B1 (en) * | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
EP1223626A1 (de) * | 2000-05-23 | 2002-07-17 | Sony Corporation | Fraktalstruktur und verfahren zu ihrer herstellung |
JP3724374B2 (ja) | 2001-01-15 | 2005-12-07 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
FR2820882B1 (fr) * | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
JP2002330346A (ja) * | 2001-05-02 | 2002-11-15 | Fujitsu Ltd | Cmosセンサ回路 |
CN1437263A (zh) * | 2002-02-05 | 2003-08-20 | 双汉科技股份有限公司 | 可降低暗电流的互补式金氧半图像传感器结构及其布局方法 |
US7038820B1 (en) * | 2002-04-03 | 2006-05-02 | Eastman Kodak Company | Automatic exposure control for an image sensor |
US7196436B2 (en) * | 2003-04-03 | 2007-03-27 | Goodrich Corporation | Solid state relay for switching AC power to a reactive load and method of operating the same |
JP4297416B2 (ja) * | 2003-06-10 | 2009-07-15 | シャープ株式会社 | 固体撮像素子、その駆動方法およびカメラ |
-
2005
- 2005-05-04 US US11/121,119 patent/US7851798B2/en active Active
-
2006
- 2006-05-02 KR KR1020077027977A patent/KR101142592B1/ko active IP Right Grant
- 2006-05-02 WO PCT/US2006/016917 patent/WO2006119333A1/en active Application Filing
- 2006-05-02 EP EP06769978A patent/EP1878216B1/de active Active
- 2006-05-02 CN CN2006800151715A patent/CN101171828B/zh active Active
- 2006-05-02 AT AT06769978T patent/ATE551834T1/de active
- 2006-05-02 JP JP2008510149A patent/JP4501121B2/ja active Active
- 2006-05-04 TW TW095115917A patent/TWI320659B/zh active
-
2010
- 2010-11-10 US US12/943,082 patent/US8021908B2/en active Active
-
2011
- 2011-08-12 US US13/209,024 patent/US8278131B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1878216B1 (de) | 2012-03-28 |
KR20080011681A (ko) | 2008-02-05 |
JP4501121B2 (ja) | 2010-07-14 |
US20060249731A1 (en) | 2006-11-09 |
US20110297816A1 (en) | 2011-12-08 |
KR101142592B1 (ko) | 2012-05-10 |
CN101171828B (zh) | 2011-09-21 |
US8021908B2 (en) | 2011-09-20 |
US20110114826A1 (en) | 2011-05-19 |
TWI320659B (en) | 2010-02-11 |
US7851798B2 (en) | 2010-12-14 |
WO2006119333A1 (en) | 2006-11-09 |
JP2008541564A (ja) | 2008-11-20 |
TW200644622A (en) | 2006-12-16 |
US8278131B2 (en) | 2012-10-02 |
EP1878216A1 (de) | 2008-01-16 |
CN101171828A (zh) | 2008-04-30 |
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