CN102523393B - 金属氧化物半导体图像传感器 - Google Patents
金属氧化物半导体图像传感器 Download PDFInfo
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CN102523393A CN102523393A (zh) | 2012-06-27 |
CN102523393B true CN102523393B (zh) | 2014-02-26 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107846559A (zh) * | 2017-10-09 | 2018-03-27 | 上海集成电路研发中心有限公司 | 一种高动态范围的图像传感器结构及其驱动方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102523391B (zh) * | 2011-12-31 | 2015-03-25 | 中国科学院上海高等研究院 | Cmos图像传感器 |
US9451192B2 (en) * | 2012-12-27 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company Limited | Bias control via selective coupling of bias transistors to pixel of image sensor |
CN105208300B (zh) * | 2014-06-23 | 2018-06-22 | 上海箩箕技术有限公司 | 图像传感器、非晶硅tft像素单元的读取电路及方法 |
CN107231572B (zh) * | 2017-01-16 | 2018-05-22 | 宁皓 | 包括基于云架构的安全计算机系统的车辆 |
CN108168695B (zh) * | 2018-01-03 | 2020-05-19 | 京东方科技集团股份有限公司 | 光检测单元及方法、光检测电路及方法和显示装置 |
CN110160647B (zh) * | 2019-06-20 | 2022-07-05 | 京东方科技集团股份有限公司 | 光强检测电路、光强检测方法和显示装置 |
CN111650632B (zh) * | 2020-06-03 | 2023-04-18 | 京东方科技集团股份有限公司 | 一种光电探测电路、其驱动方法及探测基板、射线探测器 |
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JP4421353B2 (ja) * | 2004-04-01 | 2010-02-24 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US7851798B2 (en) * | 2005-05-04 | 2010-12-14 | Micron Technology, Inc. | Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel |
JP5531797B2 (ja) * | 2010-06-15 | 2014-06-25 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
CN102769721B (zh) * | 2011-05-03 | 2016-06-22 | 联咏科技股份有限公司 | 影像传感器的相关双重取样装置及其方法 |
CN102291544B (zh) * | 2011-06-22 | 2013-04-10 | 华东师范大学 | 一种增益自动可调放大器读出电路 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107846559A (zh) * | 2017-10-09 | 2018-03-27 | 上海集成电路研发中心有限公司 | 一种高动态范围的图像传感器结构及其驱动方法 |
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Effective date of registration: 20200715 Address after: 050000 workshop 01, floor 5, building 2, block a, Fangyi science and Technology Park, No. 313, Zhujiang Avenue, hi tech Zone, Shijiazhuang City, Hebei Province Patentee after: Hebei Scotland Medical Technology Co.,Ltd. Address before: 201203 Shanghai city Pudong New Area Hartcourt Road No. 99 Patentee before: SHANGHAI ADVANCED Research Institute CHINESE ACADEMY OF SCIENCES |
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