ATE551614T1 - Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors - Google Patents

Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors

Info

Publication number
ATE551614T1
ATE551614T1 AT10169288T AT10169288T ATE551614T1 AT E551614 T1 ATE551614 T1 AT E551614T1 AT 10169288 T AT10169288 T AT 10169288T AT 10169288 T AT10169288 T AT 10169288T AT E551614 T1 ATE551614 T1 AT E551614T1
Authority
AT
Austria
Prior art keywords
magnetic sensor
detection elements
magnetic detection
protective film
substrate
Prior art date
Application number
AT10169288T
Other languages
English (en)
Inventor
Yoichi Ishizaki
Original Assignee
Tokai Rika Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Rika Co Ltd filed Critical Tokai Rika Co Ltd
Application granted granted Critical
Publication of ATE551614T1 publication Critical patent/ATE551614T1/de

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/0052Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/0005Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/091Constructional adaptation of the sensor to specific applications
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
AT10169288T 2009-07-23 2010-07-12 Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors ATE551614T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009172012A JP5249150B2 (ja) 2009-07-23 2009-07-23 磁気センサの製造方法及び磁気センサ

Publications (1)

Publication Number Publication Date
ATE551614T1 true ATE551614T1 (de) 2012-04-15

Family

ID=42829546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10169288T ATE551614T1 (de) 2009-07-23 2010-07-12 Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors

Country Status (4)

Country Link
US (1) US20110018531A1 (de)
EP (1) EP2278350B1 (de)
JP (1) JP5249150B2 (de)
AT (1) ATE551614T1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6887686B2 (ja) 2016-08-31 2021-06-16 国立大学法人東北大学 磁気トンネル接合素子を備える磁気メモリの製造方法
CN106871778B (zh) * 2017-02-23 2019-11-22 江苏多维科技有限公司 一种单芯片双轴磁电阻角度传感器
CN107064829B (zh) * 2017-05-04 2023-02-21 江苏多维科技有限公司 一种单芯片高灵敏度磁电阻线性传感器
CN110581216B (zh) * 2019-08-02 2021-08-31 潍坊歌尔微电子有限公司 一种磁传感器的制造方法、磁传感器及电子设备
JP7407041B2 (ja) 2020-03-24 2023-12-28 株式会社東海理化電機製作所 磁気センサ
JP7173104B2 (ja) * 2020-07-21 2022-11-16 Tdk株式会社 磁気センサ

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3445736A (en) * 1966-10-24 1969-05-20 Transitron Electronic Corp Semiconductor device doped with gold just to the point of no excess and method of making
JPS5623759A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Resin-sealed semiconductor device and manufacture thereof
US4785157A (en) * 1986-01-09 1988-11-15 Mitsubishi Denki Kabushiki Kaisha Method for controlling electric resistance of a compound-type resistors
JPH0888423A (ja) * 1994-09-19 1996-04-02 Asahi Chem Ind Co Ltd 磁気センサ
JPH09119968A (ja) * 1995-10-25 1997-05-06 Nec Corp 磁気抵抗センサとその製造方法
US6881611B1 (en) * 1996-07-12 2005-04-19 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device
JP3305211B2 (ja) * 1996-09-10 2002-07-22 松下電器産業株式会社 半導体装置及びその製造方法
US6258893B1 (en) * 1997-05-15 2001-07-10 Chisso Corporation Unoriented polypropylene molding
US6110607A (en) * 1998-02-20 2000-08-29 The Regents Of The University Of California High reflectance-low stress Mo-Si multilayer reflective coatings
US6333252B1 (en) * 2000-01-05 2001-12-25 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6342730B1 (en) * 2000-01-28 2002-01-29 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6261864B1 (en) * 2000-01-28 2001-07-17 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6306685B1 (en) * 2000-02-01 2001-10-23 Advanced Semiconductor Engineering, Inc. Method of molding a bump chip carrier and structure made thereby
US6238952B1 (en) * 2000-02-29 2001-05-29 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6906414B2 (en) * 2000-12-22 2005-06-14 Broadcom Corporation Ball grid array package with patterned stiffener layer
JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
JP2003214967A (ja) * 2002-01-22 2003-07-30 Hitachi Unisia Automotive Ltd ブリッジ回路型検出素子
US6621140B1 (en) * 2002-02-25 2003-09-16 Rf Micro Devices, Inc. Leadframe inductors
JPWO2004025745A1 (ja) * 2002-09-13 2006-01-12 松下電器産業株式会社 磁気抵抗効果素子およびこの製造方法並びに使用方法
US6962857B1 (en) * 2003-02-05 2005-11-08 Advanced Micro Devices, Inc. Shallow trench isolation process using oxide deposition and anneal
CN1826672A (zh) * 2003-06-11 2006-08-30 皇家飞利浦电子股份有限公司 具有磁性层结构的器件的制造方法
US7060535B1 (en) * 2003-10-29 2006-06-13 Ns Electronics Bangkok (1993) Ltd. Flat no-lead semiconductor die package including stud terminals
US7327510B2 (en) * 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US20060189029A1 (en) * 2005-02-24 2006-08-24 Koduri Sreenivasan K Method for efficient annealing of plated semiconductor package leads
TWI313078B (en) * 2005-03-17 2009-08-01 Yamaha Corporatio Magnetic sensor and manufacturing method therefor
JP4276645B2 (ja) * 2005-08-05 2009-06-10 株式会社東海理化電機製作所 センサ装置
JP5015498B2 (ja) 2006-06-15 2012-08-29 株式会社東海理化電機製作所 センサ装置
TWI302373B (en) * 2006-07-18 2008-10-21 Chipmos Technologies Shanghai Ltd Chip package structure
US7816164B2 (en) * 2006-12-01 2010-10-19 Qualcomm Mems Technologies, Inc. MEMS processing
CN101611490B (zh) * 2007-02-16 2011-07-27 住友电木株式会社 电路板的制造方法、半导体制造装置、电路板和半导体器件

Also Published As

Publication number Publication date
EP2278350B1 (de) 2012-03-28
EP2278350A1 (de) 2011-01-26
JP5249150B2 (ja) 2013-07-31
US20110018531A1 (en) 2011-01-27
JP2011027495A (ja) 2011-02-10
EP2278350A8 (de) 2011-03-23

Similar Documents

Publication Publication Date Title
ATE551614T1 (de) Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors
WO2011004198A3 (en) Patterning
DE112011102800T8 (de) Phosphorfilm, Verfahren zum Herstellen desselben, Beschichtungsverfahren für eine Phosphorschicht, Verfahren zum Herstellen eines LED-Gehäuses und dadurch hergestelltes LED-Gehäuse
WO2012160335A8 (en) Apparatus and method for writing a pattern in a substrate
WO2010080732A3 (en) Scatterometry metrology target design optimization
ATE483170T1 (de) Magnetoresistive sensorvorrichtung und verfahren zur herstellung einer solchen magnetoresistiven sensorvorrichtung
TW200943007A (en) Method of providing alignment marks, device manufacturing method and lithographic apparatus
WO2011006634A3 (de) Verfahren zur herstellung eines mehrschichtkörpers sowie mehrschichtkörper
GB2510727A (en) Degradable slip element
WO2011159722A3 (en) Method of manufacturing conductive structures
IT1402870B1 (it) Procedimento atto a definire la sensibilita' di un sensore di accelerazione oppure di campo magnetico
MX2011007280A (es) Sensor de radiacion electromagnetica y metodo de fabricacion.
ATE557266T1 (de) Integrierter polarisationssensor
EP2715451A4 (de) Strukturformungsverfahren, gegen aktinische strahlung empfindliche oder strahlungsempfindliche harzzusammensetzung, lackschicht, verfahren zur herstellung einer elektronischen vorrichtung und elektronische vorrichtung
IL228000B (en) Method for manufacturing integrated circuit devices, optical devices, micromachines, and mechanical precision devices having patterned material layers with line spacing dimensions of 50 nm or less
BRPI0814322A2 (pt) Processo de fabricação de uma peça mecânica, peça de mecânica, trem de pouso, turbomáquina, aeronave e, dispositivo de bobinamento.
EP2864839A4 (de) Strukturformungsverfahren, gegenüber aktinischen strahlen oder strahlung empfindliche harzzusammensetzung, fotolackschicht, verfahren zur herstellung einer elektronischen vorrichtung und elektronische vorrichtung
ATE528656T1 (de) Aufbau eines magnetfeld-gradientensensors und verfahren zur seiner herstellung in der integrationstechnik
FR2978243B1 (fr) Dispositif de capteur a ultrasons et son procede de fabrication
FR2939564B1 (fr) Capteur et son procede de fabrication
EP2495641A3 (de) Berührungsempfindliche Vorrichtung und Herstellungsverfahren dafür
DE102009038519A8 (de) Verfahren und Vorrichtung zur Herstellung von Stöchiometriegradientenschichten und Schichtsystemen
FR2999470B1 (fr) Procede et dispositif de fabrication d'ebauche de pneumatique
FR2947629B1 (fr) Dispositif de mesure de pression et son procede de fabrication
FR2952429B1 (fr) Capteur gyroscopique et procede de fabrication d'un tel capteur