ATE551614T1 - Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors - Google Patents
Magnetischer sensor und verfahren zur herstellung eines magnetischen sensorsInfo
- Publication number
- ATE551614T1 ATE551614T1 AT10169288T AT10169288T ATE551614T1 AT E551614 T1 ATE551614 T1 AT E551614T1 AT 10169288 T AT10169288 T AT 10169288T AT 10169288 T AT10169288 T AT 10169288T AT E551614 T1 ATE551614 T1 AT E551614T1
- Authority
- AT
- Austria
- Prior art keywords
- magnetic sensor
- detection elements
- magnetic detection
- protective film
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009172012A JP5249150B2 (ja) | 2009-07-23 | 2009-07-23 | 磁気センサの製造方法及び磁気センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE551614T1 true ATE551614T1 (de) | 2012-04-15 |
Family
ID=42829546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10169288T ATE551614T1 (de) | 2009-07-23 | 2010-07-12 | Magnetischer sensor und verfahren zur herstellung eines magnetischen sensors |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110018531A1 (de) |
EP (1) | EP2278350B1 (de) |
JP (1) | JP5249150B2 (de) |
AT (1) | ATE551614T1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887686B2 (ja) | 2016-08-31 | 2021-06-16 | 国立大学法人東北大学 | 磁気トンネル接合素子を備える磁気メモリの製造方法 |
CN106871778B (zh) * | 2017-02-23 | 2019-11-22 | 江苏多维科技有限公司 | 一种单芯片双轴磁电阻角度传感器 |
CN107064829B (zh) * | 2017-05-04 | 2023-02-21 | 江苏多维科技有限公司 | 一种单芯片高灵敏度磁电阻线性传感器 |
CN110581216B (zh) * | 2019-08-02 | 2021-08-31 | 潍坊歌尔微电子有限公司 | 一种磁传感器的制造方法、磁传感器及电子设备 |
JP7407041B2 (ja) | 2020-03-24 | 2023-12-28 | 株式会社東海理化電機製作所 | 磁気センサ |
JP7173104B2 (ja) * | 2020-07-21 | 2022-11-16 | Tdk株式会社 | 磁気センサ |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3445736A (en) * | 1966-10-24 | 1969-05-20 | Transitron Electronic Corp | Semiconductor device doped with gold just to the point of no excess and method of making |
JPS5623759A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Resin-sealed semiconductor device and manufacture thereof |
US4785157A (en) * | 1986-01-09 | 1988-11-15 | Mitsubishi Denki Kabushiki Kaisha | Method for controlling electric resistance of a compound-type resistors |
JPH0888423A (ja) * | 1994-09-19 | 1996-04-02 | Asahi Chem Ind Co Ltd | 磁気センサ |
JPH09119968A (ja) * | 1995-10-25 | 1997-05-06 | Nec Corp | 磁気抵抗センサとその製造方法 |
US6881611B1 (en) * | 1996-07-12 | 2005-04-19 | Fujitsu Limited | Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device |
JP3305211B2 (ja) * | 1996-09-10 | 2002-07-22 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6258893B1 (en) * | 1997-05-15 | 2001-07-10 | Chisso Corporation | Unoriented polypropylene molding |
US6110607A (en) * | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
US6333252B1 (en) * | 2000-01-05 | 2001-12-25 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US6342730B1 (en) * | 2000-01-28 | 2002-01-29 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US6261864B1 (en) * | 2000-01-28 | 2001-07-17 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US6306685B1 (en) * | 2000-02-01 | 2001-10-23 | Advanced Semiconductor Engineering, Inc. | Method of molding a bump chip carrier and structure made thereby |
US6238952B1 (en) * | 2000-02-29 | 2001-05-29 | Advanced Semiconductor Engineering, Inc. | Low-pin-count chip package and manufacturing method thereof |
US6906414B2 (en) * | 2000-12-22 | 2005-06-14 | Broadcom Corporation | Ball grid array package with patterned stiffener layer |
JP3498737B2 (ja) * | 2001-01-24 | 2004-02-16 | ヤマハ株式会社 | 磁気センサの製造方法 |
JP2003214967A (ja) * | 2002-01-22 | 2003-07-30 | Hitachi Unisia Automotive Ltd | ブリッジ回路型検出素子 |
US6621140B1 (en) * | 2002-02-25 | 2003-09-16 | Rf Micro Devices, Inc. | Leadframe inductors |
JPWO2004025745A1 (ja) * | 2002-09-13 | 2006-01-12 | 松下電器産業株式会社 | 磁気抵抗効果素子およびこの製造方法並びに使用方法 |
US6962857B1 (en) * | 2003-02-05 | 2005-11-08 | Advanced Micro Devices, Inc. | Shallow trench isolation process using oxide deposition and anneal |
CN1826672A (zh) * | 2003-06-11 | 2006-08-30 | 皇家飞利浦电子股份有限公司 | 具有磁性层结构的器件的制造方法 |
US7060535B1 (en) * | 2003-10-29 | 2006-06-13 | Ns Electronics Bangkok (1993) Ltd. | Flat no-lead semiconductor die package including stud terminals |
US7327510B2 (en) * | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
US20060189029A1 (en) * | 2005-02-24 | 2006-08-24 | Koduri Sreenivasan K | Method for efficient annealing of plated semiconductor package leads |
TWI313078B (en) * | 2005-03-17 | 2009-08-01 | Yamaha Corporatio | Magnetic sensor and manufacturing method therefor |
JP4276645B2 (ja) * | 2005-08-05 | 2009-06-10 | 株式会社東海理化電機製作所 | センサ装置 |
JP5015498B2 (ja) | 2006-06-15 | 2012-08-29 | 株式会社東海理化電機製作所 | センサ装置 |
TWI302373B (en) * | 2006-07-18 | 2008-10-21 | Chipmos Technologies Shanghai Ltd | Chip package structure |
US7816164B2 (en) * | 2006-12-01 | 2010-10-19 | Qualcomm Mems Technologies, Inc. | MEMS processing |
CN101611490B (zh) * | 2007-02-16 | 2011-07-27 | 住友电木株式会社 | 电路板的制造方法、半导体制造装置、电路板和半导体器件 |
-
2009
- 2009-07-23 JP JP2009172012A patent/JP5249150B2/ja active Active
-
2010
- 2010-07-12 EP EP10169288A patent/EP2278350B1/de active Active
- 2010-07-12 AT AT10169288T patent/ATE551614T1/de active
- 2010-07-21 US US12/840,330 patent/US20110018531A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2278350B1 (de) | 2012-03-28 |
EP2278350A1 (de) | 2011-01-26 |
JP5249150B2 (ja) | 2013-07-31 |
US20110018531A1 (en) | 2011-01-27 |
JP2011027495A (ja) | 2011-02-10 |
EP2278350A8 (de) | 2011-03-23 |
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