ATE521979T1 - Rasterabtaststrahlen geladener teilchen - Google Patents

Rasterabtaststrahlen geladener teilchen

Info

Publication number
ATE521979T1
ATE521979T1 AT08862809T AT08862809T ATE521979T1 AT E521979 T1 ATE521979 T1 AT E521979T1 AT 08862809 T AT08862809 T AT 08862809T AT 08862809 T AT08862809 T AT 08862809T AT E521979 T1 ATE521979 T1 AT E521979T1
Authority
AT
Austria
Prior art keywords
charged particles
raster scanning
scanning beams
sample
portions
Prior art date
Application number
AT08862809T
Other languages
German (de)
English (en)
Inventor
Dirk Preikszas
Michael Steigerwald
Joerg Ackermann
Original Assignee
Zeiss Carl Nts Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Nts Gmbh filed Critical Zeiss Carl Nts Gmbh
Application granted granted Critical
Publication of ATE521979T1 publication Critical patent/ATE521979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AT08862809T 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen ATE521979T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1422907P 2007-12-17 2007-12-17
PCT/EP2008/067419 WO2009077450A2 (en) 2007-12-17 2008-12-12 Scanning charged particle beams

Publications (1)

Publication Number Publication Date
ATE521979T1 true ATE521979T1 (de) 2011-09-15

Family

ID=40497572

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08862809T ATE521979T1 (de) 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen

Country Status (5)

Country Link
US (1) US8304750B2 (https=)
EP (1) EP2238606B1 (https=)
JP (1) JP5473004B2 (https=)
AT (1) ATE521979T1 (https=)
WO (1) WO2009077450A2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3557956A1 (en) 2004-07-21 2019-10-23 Mevion Medical Systems, Inc. A programmable radio frequency waveform generator for a synchrocyclotron
ES2730108T3 (es) 2005-11-18 2019-11-08 Mevion Medical Systems Inc Radioterapia de partículas cargadas
US8003964B2 (en) 2007-10-11 2011-08-23 Still River Systems Incorporated Applying a particle beam to a patient
US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
US8581523B2 (en) 2007-11-30 2013-11-12 Mevion Medical Systems, Inc. Interrupted particle source
WO2009114230A2 (en) 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation
WO2009154953A2 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Inc. Sample inspection methods, systems and components
US8884224B2 (en) * 2009-04-08 2014-11-11 Hermes Microvision, Inc. Charged particle beam imaging assembly and imaging method thereof
AU2010295585B2 (en) 2009-09-17 2015-10-08 Sciaky, Inc. Electron beam layer manufacturing
EP2483905B1 (en) * 2009-09-30 2015-04-01 Carl Zeiss Microscopy, LLC Variable energy charged particle systems
EP2555902B1 (en) 2010-03-31 2018-04-25 Sciaky Inc. Raster methodology for electron beam layer manufacturing using closed loop control
US8847173B2 (en) * 2010-08-06 2014-09-30 Hitachi High-Technologies Corporation Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
TWI447385B (zh) * 2011-09-16 2014-08-01 華亞科技股份有限公司 一種使用聚焦離子束系統進行晶片平面成像的方法
CN104813747B (zh) 2012-09-28 2018-02-02 梅维昂医疗系统股份有限公司 使用磁场颤振聚焦粒子束
TW201422279A (zh) 2012-09-28 2014-06-16 Mevion Medical Systems Inc 聚焦粒子束
EP2901824B1 (en) 2012-09-28 2020-04-15 Mevion Medical Systems, Inc. Magnetic shims to adjust a position of a main coil and corresponding method
JP6121545B2 (ja) 2012-09-28 2017-04-26 メビオン・メディカル・システムズ・インコーポレーテッド 粒子ビームのエネルギーの調整
EP2901823B1 (en) 2012-09-28 2021-12-08 Mevion Medical Systems, Inc. Controlling intensity of a particle beam
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
EP2901821B1 (en) 2012-09-28 2020-07-08 Mevion Medical Systems, Inc. Magnetic field regenerator
EP2900326B1 (en) 2012-09-28 2019-05-01 Mevion Medical Systems, Inc. Controlling particle therapy
TW201422278A (zh) 2012-09-28 2014-06-16 Mevion Medical Systems Inc 粒子加速器之控制系統
SG11201509479WA (en) 2013-05-30 2015-12-30 Goldway Technology Ltd Method of marking material and system therefore, and material marked according to same method
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9218934B2 (en) 2013-07-08 2015-12-22 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
EP3049151B1 (en) 2013-09-27 2019-12-25 Mevion Medical Systems, Inc. Particle beam scanning
KR102098315B1 (ko) 2013-10-11 2020-04-10 차우 타이 푹 쥬얼리 컴퍼니 리미티드 원석과 다이아몬드를 포함하는 보석을 마킹하는 방법, 및 이 방법에 따라 마킹된 마크 및 마킹된 보석
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
US10925147B2 (en) 2016-07-08 2021-02-16 Mevion Medical Systems, Inc. Treatment planning
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
JP6940676B2 (ja) 2017-06-30 2021-09-29 メビオン・メディカル・システムズ・インコーポレーテッド リニアモーターを使用して制御される構成可能コリメータ
KR102757231B1 (ko) * 2017-07-21 2025-01-21 칼 짜이스 에스엠티 게엠베하 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치
EP3934751B1 (en) 2019-03-08 2024-07-17 Mevion Medical Systems, Inc. Collimator and energy degrader for a particle therapy system
DE102020103339A1 (de) 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US12191110B2 (en) * 2021-04-20 2025-01-07 The University Of Liverpool Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638329B2 (ja) * 1986-12-29 1994-05-18 セイコー電子工業株式会社 集束イオンビーム走査方法
JPH0638329A (ja) 1992-07-17 1994-02-10 Totoku Electric Co Ltd 絶縁被膜剥離装置および型巻線の製造方法
JP4054445B2 (ja) 1998-06-30 2008-02-27 株式会社東芝 荷電ビーム描画方法
US6614026B1 (en) * 1999-04-15 2003-09-02 Applied Materials, Inc. Charged particle beam column
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
WO2002037526A1 (en) * 2000-11-02 2002-05-10 Ebara Corporation Electron beam apparatus and method for manufacturing semiconductor device comprising the apparatus
GB2374723B (en) 2001-04-20 2005-04-20 Leo Electron Microscopy Ltd Scanning electron microscope
JP2003045780A (ja) 2001-07-30 2003-02-14 Nec Corp マスク描画データの作成方法
DE10233002B4 (de) 2002-07-19 2006-05-04 Leo Elektronenmikroskopie Gmbh Objektivlinse für ein Elektronenmikroskopiesystem und Elektronenmikroskopiesystem
DE10236738B9 (de) 2002-08-09 2010-07-15 Carl Zeiss Nts Gmbh Elektronenmikroskopiesystem und Elektronenmikroskopieverfahren
DE10331137B4 (de) 2003-07-09 2008-04-30 Carl Zeiss Nts Gmbh Detektorsystem für ein Rasterelektronenmikroskop und Rasterelektronenmikroskop mit einem entsprechenden Detektorsystem
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
CN101248505B (zh) 2005-07-08 2010-12-15 耐克斯金思美控股公司 受控粒子束制造用的设备和方法
JP4748714B2 (ja) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法
WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation

Also Published As

Publication number Publication date
EP2238606A2 (en) 2010-10-13
JP2011507202A (ja) 2011-03-03
WO2009077450A3 (en) 2009-12-03
US20100294930A1 (en) 2010-11-25
US8304750B2 (en) 2012-11-06
JP5473004B2 (ja) 2014-04-16
EP2238606B1 (en) 2011-08-24
WO2009077450A2 (en) 2009-06-25

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