SG11201509479WA - Method of marking material and system therefore, and material marked according to same method - Google Patents

Method of marking material and system therefore, and material marked according to same method

Info

Publication number
SG11201509479WA
SG11201509479WA SG11201509479WA SG11201509479WA SG11201509479WA SG 11201509479W A SG11201509479W A SG 11201509479WA SG 11201509479W A SG11201509479W A SG 11201509479WA SG 11201509479W A SG11201509479W A SG 11201509479WA SG 11201509479W A SG11201509479W A SG 11201509479WA
Authority
SG
Singapore
Prior art keywords
marked according
same method
marking
marking material
same
Prior art date
Application number
SG11201509479WA
Inventor
Koon Chung Hui
Ho Ching
Ching Tom Kong
Original Assignee
Goldway Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldway Technology Ltd filed Critical Goldway Technology Ltd
Publication of SG11201509479WA publication Critical patent/SG11201509479WA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
    • B41M3/14—Security printing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31713—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
SG11201509479WA 2013-05-30 2014-03-31 Method of marking material and system therefore, and material marked according to same method SG11201509479WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
HK13106425 2013-05-30
PCT/CN2014/074438 WO2014190801A1 (en) 2013-05-30 2014-03-31 Method of marking material and system therefore, and material marked according to same method

Publications (1)

Publication Number Publication Date
SG11201509479WA true SG11201509479WA (en) 2015-12-30

Family

ID=50478242

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201509479WA SG11201509479WA (en) 2013-05-30 2014-03-31 Method of marking material and system therefore, and material marked according to same method

Country Status (12)

Country Link
US (2) US9901895B2 (en)
EP (1) EP2808118B1 (en)
JP (1) JP6291568B2 (en)
KR (1) KR102067202B1 (en)
CN (1) CN104210304B (en)
AU (1) AU2014273707B2 (en)
CA (1) CA2912955C (en)
HK (2) HK1203906A1 (en)
MY (1) MY172321A (en)
SG (1) SG11201509479WA (en)
TW (1) TWI645988B (en)
WO (1) WO2014190801A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2926587C (en) 2013-10-11 2020-03-10 Chow Tai Fook Jewellery Company Limited Method of providing markings to precious stones including gemstones and diamonds, and markings and marked precious stones marked according to such a method
HK1213429A2 (en) * 2015-12-31 2016-06-30 Master Dynamic Ltd Method of forming a marking on an article, and an article having a mark thereon
US20180171468A1 (en) * 2016-12-21 2018-06-21 Ncc Nano, Llc Method for deposting a functional material on a substrate
CN112684523A (en) * 2021-01-29 2021-04-20 中国科学技术大学 Method for manufacturing micro-lens array structure

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651322Y2 (en) * 1975-09-01 1981-12-01
GB1588445A (en) 1977-05-26 1981-04-23 Nat Res Dev Toughening diamond
GB2047215B (en) 1979-04-18 1982-12-22 Dreschhoff G A M Identification markings for gemstones
JPS5651322A (en) * 1979-10-04 1981-05-08 Fujita Kinzoku Kogyo Kk Formation of lustrous satin surface for decoration
US4467172A (en) * 1983-01-03 1984-08-21 Jerry Ehrenwald Method and apparatus for laser engraving diamonds with permanent identification markings
US5149938A (en) * 1990-10-11 1992-09-22 Harry Winston, S.A. Methods for producing indicia on diamonds
US5410125A (en) * 1990-10-11 1995-04-25 Harry Winston, S.A. Methods for producing indicia on diamonds
US5234537A (en) * 1991-03-22 1993-08-10 Shimadzu Corporation Dry etching method and its application
US5702586A (en) * 1994-06-28 1997-12-30 The United States Of America As Represented By The Secretary Of The Navy Polishing diamond surface
US5753887A (en) * 1995-05-16 1998-05-19 Engraving Technologies, Inc. Apparatus for laser engraving indicia on gemstones
GB9514558D0 (en) * 1995-07-17 1995-09-13 Gersan Ets Marking diamond
GB2325439A (en) * 1997-05-23 1998-11-25 Gersan Ets Marking diamond gemstone by plasma or ion beam etching through a laser ablated resist
IL124592A (en) * 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
GB9727364D0 (en) * 1997-12-24 1998-02-25 Gersan Ets Watermark
US6767614B1 (en) * 2000-12-19 2004-07-27 Wolfgang M. J. Hofmann Multiple-level actuators and clamping devices
CN1258734C (en) * 2001-04-26 2006-06-07 维灵马可公司 Method for producing and visualizing an optically invisible mark
JP4477325B2 (en) * 2003-08-15 2010-06-09 株式会社ワイ・ワイ・エル Processing method and apparatus using processing beam
US7284396B2 (en) * 2005-03-01 2007-10-23 International Gemstone Registry Inc. Method and system for laser marking in the volume of gemstones such as diamonds
JP4099181B2 (en) * 2005-07-11 2008-06-11 Ｔｄｋ株式会社 Ion beam etching method and ion beam etching apparatus
US8304750B2 (en) 2007-12-17 2012-11-06 Carl Zeiss Nts Gmbh Scanning charged particle beams
EP2144117A1 (en) * 2008-07-11 2010-01-13 The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin Process and system for fabrication of patterns on a surface
CN101456534B (en) * 2009-01-09 2011-12-14 天津大学 Micro-nano fabrication method for auxiliary etch by combining focused ion beam injection and xenon fluoride gas
US8557613B2 (en) * 2010-06-14 2013-10-15 California Institute Of Technology Methods for designing, fabricating, and predicting shape formations in a material

Also Published As

Publication number Publication date
TWI645988B (en) 2019-01-01
CA2912955A1 (en) 2014-12-04
KR20160014005A (en) 2016-02-05
MY172321A (en) 2019-11-21
JP6291568B2 (en) 2018-03-14
EP2808118A1 (en) 2014-12-03
JP2016521593A (en) 2016-07-25
HK1203888A1 (en) 2015-11-06
US20140356577A1 (en) 2014-12-04
EP2808118B1 (en) 2018-03-07
KR102067202B1 (en) 2020-01-17
CA2912955C (en) 2019-12-31
HK1203906A1 (en) 2015-11-06
AU2014273707B2 (en) 2017-12-07
AU2014273707A1 (en) 2015-12-03
CN104210304B (en) 2019-01-18
TW201444703A (en) 2014-12-01
CN104210304A (en) 2014-12-17
US9901895B2 (en) 2018-02-27
WO2014190801A1 (en) 2014-12-04
US20180193814A1 (en) 2018-07-12

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