ATE519169T1 - Ausdruckbarkeitsverifikation durch schrittweise modellierungsgenauigkeit - Google Patents

Ausdruckbarkeitsverifikation durch schrittweise modellierungsgenauigkeit

Info

Publication number
ATE519169T1
ATE519169T1 AT07844831T AT07844831T ATE519169T1 AT E519169 T1 ATE519169 T1 AT E519169T1 AT 07844831 T AT07844831 T AT 07844831T AT 07844831 T AT07844831 T AT 07844831T AT E519169 T1 ATE519169 T1 AT E519169T1
Authority
AT
Austria
Prior art keywords
errors
models
optical
progressively
identified
Prior art date
Application number
AT07844831T
Other languages
English (en)
Inventor
Kafai Lai
Alan E Rosenbluth
Gregg M Gallatin
Maharaj Mukherjee
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE519169T1 publication Critical patent/ATE519169T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07844831T 2006-11-02 2007-11-02 Ausdruckbarkeitsverifikation durch schrittweise modellierungsgenauigkeit ATE519169T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/555,854 US7512927B2 (en) 2006-11-02 2006-11-02 Printability verification by progressive modeling accuracy
PCT/US2007/083441 WO2008057996A2 (en) 2006-11-02 2007-11-02 Printability verification by progressive modeling accuracy

Publications (1)

Publication Number Publication Date
ATE519169T1 true ATE519169T1 (de) 2011-08-15

Family

ID=39365257

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07844831T ATE519169T1 (de) 2006-11-02 2007-11-02 Ausdruckbarkeitsverifikation durch schrittweise modellierungsgenauigkeit

Country Status (5)

Country Link
US (1) US7512927B2 (de)
EP (1) EP2095280B1 (de)
KR (1) KR20090085651A (de)
AT (1) ATE519169T1 (de)
WO (1) WO2008057996A2 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7124394B1 (en) * 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
US7698665B2 (en) * 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7921385B2 (en) * 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types
US7788627B2 (en) * 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
US7793253B2 (en) * 2005-10-04 2010-09-07 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
US7703049B2 (en) 2005-10-06 2010-04-20 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions
US7962868B2 (en) * 2005-10-28 2011-06-14 Freescale Semiconductor, Inc. Method for forming a semiconductor device using optical proximity correction for the optical lithography
US20070253637A1 (en) * 2006-03-08 2007-11-01 Mentor Graphics Corp. Image intensity calculation using a sectored source map
US7836423B2 (en) * 2006-03-08 2010-11-16 Mentor Graphics Corporation Sum of coherent systems (SOCS) approximation based on object information
US8370773B2 (en) * 2006-08-16 2013-02-05 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit using inverse lithography technology
JP5032948B2 (ja) * 2006-11-14 2012-09-26 エーエスエムエル マスクツールズ ビー．ブイ． Ｄｐｔプロセスで用いられるパターン分解を行うための方法、プログラムおよび装置
WO2008112605A2 (en) * 2007-03-09 2008-09-18 Mentor Graphics Corporation Incremental layout analysis
US7788630B2 (en) * 2007-03-21 2010-08-31 Synopsys, Inc. Method and apparatus for determining an optical model that models the effect of optical proximity correction
WO2008135810A2 (en) * 2007-05-03 2008-11-13 Freescale Semiconductor, Inc. Method and apparatus for designing an integrated circuit
KR100881194B1 (ko) * 2007-05-16 2009-02-05 삼성전자주식회사 공간 영상 검사 장비를 이용한 마스크 측정 방법
US7631289B1 (en) * 2007-06-28 2009-12-08 Cadence Design Systems, Inc. Method and system for implementing optimized lithography models for accuracy and resolution
NL1036189A1 (nl) * 2007-12-05 2009-06-08 Brion Tech Inc Methods and System for Lithography Process Window Simulation.
US7966586B2 (en) * 2007-12-07 2011-06-21 Cadence Design Systems, Inc. Intelligent pattern signature based on lithography effects
US7904853B1 (en) 2007-12-27 2011-03-08 Cadence Design Systems, Inc. Pattern signature
US8358828B2 (en) * 2007-12-28 2013-01-22 Cadence Design Systems, Inc. Interpolation of irregular data in a finite-dimensional metric space in lithographic simulation
US8381152B2 (en) 2008-06-05 2013-02-19 Cadence Design Systems, Inc. Method and system for model-based design and layout of an integrated circuit
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
US8103983B2 (en) * 2008-11-12 2012-01-24 International Business Machines Corporation Electrically-driven optical proximity correction to compensate for non-optical effects
NL2003699A (en) * 2008-12-18 2010-06-21 Brion Tech Inc Method and system for lithography process-window-maximixing optical proximity correction.
JP2010156866A (ja) * 2008-12-27 2010-07-15 Toshiba Corp 特徴量抽出方法、テストパターン選択方法、レジストモデル作成方法および設計回路パターン検証方法
JP2010177374A (ja) * 2009-01-28 2010-08-12 Toshiba Corp パターン検証方法および半導体装置の製造方法
US8166423B2 (en) * 2009-09-08 2012-04-24 International Business Machines Corporation Photomask design verification
JP4918598B2 (ja) * 2010-01-18 2012-04-18 株式会社ニューフレアテクノロジー 検査装置および検査方法
US8797721B2 (en) 2010-02-02 2014-08-05 Apple Inc. Portable electronic device housing with outer glass surfaces
KR20110094467A (ko) * 2010-02-16 2011-08-24 삼성전자주식회사 리타겟 프로세스 모델링 방법, 및 그 프로세스 모델링 방법을 이용한 마스크 제조방법
NL2006091A (en) * 2010-03-05 2011-09-06 Asml Netherlands Bv Design rule optimization in lithographic imaging based on correlation of functions representing mask and predefined optical conditions.
US8321822B2 (en) * 2010-05-27 2012-11-27 United Microelectronics Corp. Method and computer-readable medium of optical proximity correction
US8402397B2 (en) * 2011-07-26 2013-03-19 Mentor Graphics Corporation Hotspot detection based on machine learning
JP5730721B2 (ja) * 2011-09-08 2015-06-10 株式会社日立ハイテクノロジーズ パターン計測装置、およびパターン計測方法
US8832621B1 (en) 2011-11-28 2014-09-09 Cadence Design Systems, Inc. Topology design using squish patterns
US8881071B2 (en) * 2011-12-29 2014-11-04 Intel Corporation Photolithography mask design simplification
US8745550B2 (en) * 2012-07-09 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fracture aware OPC
US8972908B2 (en) * 2013-07-30 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for electron beam proximity correction with improved critical dimension accuracy
US8997027B2 (en) * 2013-07-31 2015-03-31 GlobalFoundries, Inc. Methods for modifying an integrated circuit layout design
US9529255B2 (en) * 2013-12-04 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Image process method to improve mask inspection performance
US20150287176A1 (en) * 2014-04-02 2015-10-08 Globalfoundries Inc. Method and appratus for hybrid test pattern generation for opc model calibration
US9547892B2 (en) * 2014-05-06 2017-01-17 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
KR102343850B1 (ko) * 2015-05-06 2021-12-28 삼성전자주식회사 광 근접 보정에서 공통의 바이어스 값을 이용하여 마스크를 제작하는 방법
US10395361B2 (en) 2015-08-10 2019-08-27 Kla-Tencor Corporation Apparatus and methods for inspecting reticles
KR20180030228A (ko) 2015-08-10 2018-03-21 케이엘에이-텐코 코포레이션 웨이퍼-레벨 결함 인쇄성을 예측하기 위한 장치 및 방법들
KR102387459B1 (ko) 2015-11-20 2022-04-15 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US10394984B2 (en) 2015-11-25 2019-08-27 International Business Machines Corporation Tool to provide integrated circuit masks with accurate dimensional compensation of patterns
US9885951B2 (en) 2015-12-11 2018-02-06 International Business Machines Corporation Structure design generation for fixing metal tip-to-tip across cell boundary
US10025177B2 (en) * 2016-03-16 2018-07-17 Samsung Electronics Co., Ltd. Efficient way to creating process window enhanced photomask layout
US11681849B2 (en) * 2016-10-24 2023-06-20 Asml Netherlands B.V. Method for optimizing a patterning device pattern
US10394985B2 (en) * 2017-01-11 2019-08-27 Samsung Electronics Co., Ltd. Apparatus and method for modeling random process using reduced length least-squares autoregressive parameter estimation
US11074376B2 (en) * 2017-04-26 2021-07-27 United Microelectronics Corp. Method for analyzing process output and method for creating equipment parameter model
US10678142B2 (en) * 2017-11-14 2020-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Optical proximity correction and photomasks
DE102018125109B4 (de) 2017-11-14 2022-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Optische Nahbereichskorrektur
EP3731018A1 (de) * 2019-04-23 2020-10-28 ASML Netherlands B.V. Verfahren zur erneuten bildgebung eines bildes und zugehörige metrologievorrichtung
US11574103B2 (en) * 2020-01-31 2023-02-07 International Business Machines Corporation Addressing layout retargeting shortfalls
CN112987488B (zh) * 2021-02-22 2024-03-12 上海华力集成电路制造有限公司 Opc修正方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7107571B2 (en) * 1997-09-17 2006-09-12 Synopsys, Inc. Visual analysis and verification system using advanced tools
US6470489B1 (en) * 1997-09-17 2002-10-22 Numerical Technologies, Inc. Design rule checking system and method
US5965306A (en) * 1997-10-15 1999-10-12 International Business Machines Corporation Method of determining the printability of photomask defects
JPH11282151A (ja) * 1998-03-27 1999-10-15 Mitsubishi Electric Corp マスクパターン検証装置、その方法およびそのプログラムを記録した媒体
US6249904B1 (en) * 1999-04-30 2001-06-19 Nicolas Bailey Cobb Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
US6526164B1 (en) * 1999-05-27 2003-02-25 International Business Machines Corporation Intelligent photomask disposition
US6430737B1 (en) * 2000-07-10 2002-08-06 Mentor Graphics Corp. Convergence technique for model-based optical and process correction
US7392168B2 (en) * 2001-03-13 2008-06-24 Yuri Granik Method of compensating for etch effects in photolithographic processing
JP4748343B2 (ja) * 2001-04-26 2011-08-17 大日本印刷株式会社 ウエーハ転写検証方法
US6657716B1 (en) * 2001-05-23 2003-12-02 Advanced Micro Devices Inc. Method and apparatus for detecting necking over field/active transitions
US6574784B1 (en) * 2001-06-14 2003-06-03 George P. Lippincott Short edge management in rule based OPC
JP3615182B2 (ja) * 2001-11-26 2005-01-26 株式会社東芝 光近接効果補正方法及び光近接効果補正システム
US6745372B2 (en) * 2002-04-05 2004-06-01 Numerical Technologies, Inc. Method and apparatus for facilitating process-compliant layout optimization
AU2003224951A1 (en) * 2002-04-10 2003-10-27 Barcelona Design, Inc. Method and apparatus for efficient semiconductor process evaluation
US6973633B2 (en) * 2002-07-24 2005-12-06 George Lippincott Caching of lithography and etch simulation results
US6792592B2 (en) * 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
US6807663B2 (en) * 2002-09-23 2004-10-19 Numerical Technologies, Inc. Accelerated layout processing using OPC pre-processing
US6934929B2 (en) * 2003-01-13 2005-08-23 Lsi Logic Corporation Method for improving OPC modeling
US7245356B2 (en) * 2003-02-11 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and method for optimizing illumination using a photolithographic simulation
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
US7127699B2 (en) * 2003-12-16 2006-10-24 International Business Machines Corporation Method for optimizing a number of kernels used in a sum of coherent sources for optical proximity correction in an optical microlithography process
US7536660B2 (en) * 2004-02-24 2009-05-19 Konstantinos Adam OPC simulation model using SOCS decomposition of edge fragments
KR100841729B1 (ko) * 2004-09-14 2008-06-27 에이에스엠엘 마스크툴즈 비.브이. 풀-칩 제조 신뢰성 체크 및 보정 수행 방법 및 이를 수행하기 위한 컴퓨터 프로그램을 기록한 컴퓨터로 읽을 수 있는 기록매체
JP4768251B2 (ja) * 2004-11-01 2011-09-07 株式会社東芝 半導体集積回路の設計方法、半導体集積回路の設計システム及び半導体集積回路の製造方法
US7350183B2 (en) * 2004-11-05 2008-03-25 International Business Machines Corporation Method for improving optical proximity correction
DE102005003001B4 (de) * 2005-01-21 2009-10-08 Qimonda Ag Verfahren zur Korrektur des optischen Proximity-Effektes

Also Published As

Publication number Publication date
US7512927B2 (en) 2009-03-31
KR20090085651A (ko) 2009-08-07
EP2095280B1 (de) 2011-08-03
WO2008057996A2 (en) 2008-05-15
EP2095280A2 (de) 2009-09-02
WO2008057996A3 (en) 2008-07-10
EP2095280A4 (de) 2009-12-09
US20080127027A1 (en) 2008-05-29

Similar Documents

Publication Publication Date Title
ATE519169T1 (de) Ausdruckbarkeitsverifikation durch schrittweise modellierungsgenauigkeit
WO2010117626A3 (en) Lithography modelling and applications
WO2005104189A3 (en) System and method for integrated circuit device design and manufacture using optical rule checking to screen resolution enhancement techniques
ATE507504T1 (de) Verbesserung der prozessmodellgenauigkeit durch simulation von maskenecken-rundungseffekten
CN110012672B (zh) 用于负型可显影光致抗蚀剂的计算机建模及模拟的改进方法
US20140075398A1 (en) Method and Apparatus for Process Window Modeling
US7093226B2 (en) Method and apparatus of wafer print simulation using hybrid model with mask optical images
CN106707681B (zh) 一种增强opc处理精度的方法
US9223911B2 (en) Optical model employing phase transmission values for sub-resolution assist features
US8972229B2 (en) Fast 3D mask model based on implicit countors
US8006203B2 (en) Bulk image modeling for optical proximity correction
CN115826368B (zh) 一种时变光源-掩模版协同优化方法及相关设备
US9122160B2 (en) Method and apparatus for performing optical proximity and photomask correction
JP2009105453A5 (de)
Hellweg et al. Actinic Review of EUV masks: Challenges and achievements in delivering the perfect mask for EUV production
US8327312B2 (en) Assessing printability of a very-large-scale integration design
KR102227127B1 (ko) 리소그래피 시뮬레이션을 이용한 디자인룰 생성 장치 및 방법
Raghunathan et al. Edge placement errors in EUV from aberration variation
Zhang et al. Polarization aberration modeling via Jones matrix in the context of OPC
Lyons et al. Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations
US8499260B2 (en) Optical proximity correction verification accounting for mask deviations
CN101349862A (zh) 基于多光刻胶有效扩散长度的光学临近修正模型校准方法
Cheng et al. OPC model prediction capability improvements by accounting for mask 3D-EMF effects
Lucas et al. Reticle enhancement verification for the 65nm and 45nm nodes
Breijo et al. Using hardware description languages in a basic subject of Digital Electronic: Adaptation to high academic performance group

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties