ATE514652T1 - Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren - Google Patents
Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahrenInfo
- Publication number
- ATE514652T1 ATE514652T1 AT01982512T AT01982512T ATE514652T1 AT E514652 T1 ATE514652 T1 AT E514652T1 AT 01982512 T AT01982512 T AT 01982512T AT 01982512 T AT01982512 T AT 01982512T AT E514652 T1 ATE514652 T1 AT E514652T1
- Authority
- AT
- Austria
- Prior art keywords
- absolute pressure
- pressure sensor
- manufactured
- production
- surface micro
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20002472A FI112644B (fi) | 2000-11-10 | 2000-11-10 | Pintamikromekaaninen absoluuttipaineanturi ja menetelmä sen valmistamiseksi |
PCT/FI2001/000970 WO2002038491A1 (en) | 2000-11-10 | 2001-11-07 | Surface-micromachined absolute pressure sensor and a method for manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE514652T1 true ATE514652T1 (de) | 2011-07-15 |
Family
ID=8559475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01982512T ATE514652T1 (de) | 2000-11-10 | 2001-11-07 | Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren |
Country Status (9)
Country | Link |
---|---|
US (1) | US6931935B2 (de) |
EP (1) | EP1337458B1 (de) |
JP (1) | JP3857231B2 (de) |
CN (1) | CN1225400C (de) |
AT (1) | ATE514652T1 (de) |
AU (1) | AU2002214074A1 (de) |
FI (1) | FI112644B (de) |
RU (1) | RU2258914C2 (de) |
WO (1) | WO2002038491A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10117486A1 (de) | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Verfahren zur Herstelung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
DE10247487A1 (de) | 2002-10-11 | 2004-05-06 | Infineon Technologies Ag | Membran und Verfahren zu deren Herstellung |
DE102004015442A1 (de) * | 2004-03-30 | 2005-10-20 | Bosch Gmbh Robert | Verfahren zum Verschließen von perforierten Membranen |
US6923069B1 (en) | 2004-10-18 | 2005-08-02 | Honeywell International Inc. | Top side reference cavity for absolute pressure sensor |
DE102005016243B3 (de) * | 2005-04-08 | 2006-09-28 | Austriamicrosystems Ag | Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung |
US7560789B2 (en) * | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN101263077B (zh) * | 2005-09-09 | 2011-11-09 | 皇家飞利浦电子股份有限公司 | 一种制造具有间隔的微系统的方法 |
WO2007029133A2 (en) * | 2005-09-09 | 2007-03-15 | Koninklijke Philips Electronics N. V. | A method of manufacturing a microsystem, such a microsystem, a stack of foils comprising such a microsystem, an electronic device comprising such a microsystem and use of the electronic device |
US7417784B2 (en) | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
WO2008103632A2 (en) * | 2007-02-20 | 2008-08-28 | Qualcomm Mems Technologies, Inc. | Equipment and methods for etching of mems |
JP2011501874A (ja) * | 2007-09-14 | 2011-01-13 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Mems製造において使用されるエッチングプロセス |
US8022490B2 (en) * | 2008-03-24 | 2011-09-20 | Conexant Systems, Inc. | Micro electro-mechanical sensor (MEMS) fabricated with ribbon wire bonds |
DE102008028300B4 (de) * | 2008-06-13 | 2021-10-07 | Tdk Electronics Ag | Leiterplatte mit flexiblem Bereich und Verfahren zur Herstellung |
RU2465681C2 (ru) * | 2009-02-19 | 2012-10-27 | Государственное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) | Способ изготовления чувствительного элемента датчика давления жидких и газообразных сред |
US8393222B2 (en) | 2010-02-27 | 2013-03-12 | Codman Neuro Sciences Sárl | Apparatus and method for minimizing drift of a piezo-resistive pressure sensor due to progressive release of mechanical stress over time |
KR101184459B1 (ko) | 2010-05-06 | 2012-09-19 | 삼성전기주식회사 | 압력센서 |
US8659816B2 (en) | 2011-04-25 | 2014-02-25 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of making the same |
RU2477846C1 (ru) * | 2011-12-02 | 2013-03-20 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") | Датчик абсолютного давления |
CN102539029B (zh) * | 2012-02-29 | 2013-09-25 | 上海交通大学 | 基于柔性mems技术的三维流体应力传感器及其阵列 |
FR3002219B1 (fr) | 2013-02-19 | 2015-04-10 | Commissariat Energie Atomique | Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse |
DE102017213354A1 (de) | 2017-08-02 | 2019-02-07 | Robert Bosch Gmbh | Mikromechanische Drucksensorvorrichtung und entsprechendes Herstellungsverfahren |
CN209326840U (zh) | 2018-12-27 | 2019-08-30 | 热敏碟公司 | 压力传感器及压力变送器 |
JP7485045B2 (ja) | 2020-07-21 | 2024-05-16 | 株式会社村田製作所 | 圧力センサ構造、圧力センサ装置および圧力センサ構造の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
US5177661A (en) * | 1989-01-13 | 1993-01-05 | Kopin Corporation | SOI diaphgram sensor |
US5506454A (en) * | 1991-03-20 | 1996-04-09 | Hitachi, Ltd. | System and method for diagnosing characteristics of acceleration sensor |
US5707077A (en) * | 1991-11-18 | 1998-01-13 | Hitachi, Ltd. | Airbag system using three-dimensional acceleration sensor |
US5802684A (en) * | 1993-09-14 | 1998-09-08 | Nikon Corporation | Process for producing a vibration angular-velocity sensor |
DE59508560D1 (de) * | 1994-11-24 | 2000-08-17 | Siemens Ag | Kapazitiver Drucksensor |
FI100918B (fi) | 1995-02-17 | 1998-03-13 | Vaisala Oy | Pintamikromekaaninen, symmetrinen paine-eroanturi |
JPH08236784A (ja) * | 1995-02-23 | 1996-09-13 | Tokai Rika Co Ltd | 加速度センサ及びその製造方法 |
US5831162A (en) * | 1997-01-21 | 1998-11-03 | Delco Electronics Corporation | Silicon micromachined motion sensor and method of making |
JP3362714B2 (ja) * | 1998-11-16 | 2003-01-07 | 株式会社豊田中央研究所 | 静電容量型圧力センサおよびその製造方法 |
US6816301B1 (en) * | 1999-06-29 | 2004-11-09 | Regents Of The University Of Minnesota | Micro-electromechanical devices and methods of manufacture |
DE10032579B4 (de) | 2000-07-05 | 2020-07-02 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement |
-
2000
- 2000-11-10 FI FI20002472A patent/FI112644B/fi not_active IP Right Cessation
-
2001
- 2001-11-07 JP JP2002541035A patent/JP3857231B2/ja not_active Expired - Lifetime
- 2001-11-07 US US10/416,267 patent/US6931935B2/en not_active Expired - Lifetime
- 2001-11-07 RU RU2003113320/28A patent/RU2258914C2/ru active
- 2001-11-07 WO PCT/FI2001/000970 patent/WO2002038491A1/en active Application Filing
- 2001-11-07 EP EP01982512A patent/EP1337458B1/de not_active Expired - Lifetime
- 2001-11-07 CN CN01821908.XA patent/CN1225400C/zh not_active Expired - Lifetime
- 2001-11-07 AT AT01982512T patent/ATE514652T1/de not_active IP Right Cessation
- 2001-11-07 AU AU2002214074A patent/AU2002214074A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1337458B1 (de) | 2011-06-29 |
CN1225400C (zh) | 2005-11-02 |
RU2258914C2 (ru) | 2005-08-20 |
AU2002214074A1 (en) | 2002-05-21 |
US20040020303A1 (en) | 2004-02-05 |
FI112644B (fi) | 2003-12-31 |
EP1337458A1 (de) | 2003-08-27 |
FI20002472A (fi) | 2002-05-11 |
US6931935B2 (en) | 2005-08-23 |
CN1486277A (zh) | 2004-03-31 |
WO2002038491A1 (en) | 2002-05-16 |
JP2004513356A (ja) | 2004-04-30 |
FI20002472A0 (fi) | 2000-11-10 |
JP3857231B2 (ja) | 2006-12-13 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |