AU2002214074A1 - Surface-micromachined absolute pressure sensor and a method for manufacturing thereof - Google Patents

Surface-micromachined absolute pressure sensor and a method for manufacturing thereof

Info

Publication number
AU2002214074A1
AU2002214074A1 AU2002214074A AU1407402A AU2002214074A1 AU 2002214074 A1 AU2002214074 A1 AU 2002214074A1 AU 2002214074 A AU2002214074 A AU 2002214074A AU 1407402 A AU1407402 A AU 1407402A AU 2002214074 A1 AU2002214074 A1 AU 2002214074A1
Authority
AU
Australia
Prior art keywords
manufacturing
absolute pressure
pressure sensor
movable electrode
fixed electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214074A
Inventor
Martti Blomberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valtion Teknillinen Tutkimuskeskus
Vaisala Oy
Original Assignee
Valtion Teknillinen Tutkimuskeskus
Vaisala Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valtion Teknillinen Tutkimuskeskus, Vaisala Oy filed Critical Valtion Teknillinen Tutkimuskeskus
Publication of AU2002214074A1 publication Critical patent/AU2002214074A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

A capacitive pressure sensor structure, in particular for measurement of absolute pressure, and a method for manufacturing the sensor. The sensor includes at least one fixed electrode, and at least one movable electrode electrically isolated from said fixed electrode and spaced apart from said fixed electrode. A portion of said movable electrode is formed from a porous polycrystalline silicon layer that in a finished component remains as an integral portion of said flexibly movable electrode.
AU2002214074A 2000-11-10 2001-11-07 Surface-micromachined absolute pressure sensor and a method for manufacturing thereof Abandoned AU2002214074A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20002472A FI112644B (en) 2000-11-10 2000-11-10 Surface micromechanical absolute pressure sensor and method of manufacture thereof
FI20002472 2000-11-10
PCT/FI2001/000970 WO2002038491A1 (en) 2000-11-10 2001-11-07 Surface-micromachined absolute pressure sensor and a method for manufacturing thereof

Publications (1)

Publication Number Publication Date
AU2002214074A1 true AU2002214074A1 (en) 2002-05-21

Family

ID=8559475

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214074A Abandoned AU2002214074A1 (en) 2000-11-10 2001-11-07 Surface-micromachined absolute pressure sensor and a method for manufacturing thereof

Country Status (9)

Country Link
US (1) US6931935B2 (en)
EP (1) EP1337458B1 (en)
JP (1) JP3857231B2 (en)
CN (1) CN1225400C (en)
AT (1) ATE514652T1 (en)
AU (1) AU2002214074A1 (en)
FI (1) FI112644B (en)
RU (1) RU2258914C2 (en)
WO (1) WO2002038491A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10117486A1 (en) 2001-04-07 2002-10-17 Bosch Gmbh Robert Method for producing a semiconductor component and a semiconductor component produced using the method
DE10247487A1 (en) 2002-10-11 2004-05-06 Infineon Technologies Ag Membrane and process for its manufacture
DE102004015442A1 (en) * 2004-03-30 2005-10-20 Bosch Gmbh Robert Method of closing perforated membranes
US6923069B1 (en) 2004-10-18 2005-08-02 Honeywell International Inc. Top side reference cavity for absolute pressure sensor
DE102005016243B3 (en) * 2005-04-08 2006-09-28 Austriamicrosystems Ag Micromechanical component e.g. micro electro mechanical system structure, for use as e.g. micro sensor, has one metal layer of multi-layer structure extending at side over pile and electrically conductive membrane integrated in structure
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP1926679A2 (en) * 2005-09-09 2008-06-04 Koninklijke Philips Electronics N.V. A method of manufacturing a microsystem, such a microsystem, a stack of foils comprising such a microsystem, an electronic device comprising such a microsystem and use of the electronic device
EP1926678B1 (en) * 2005-09-09 2013-03-20 Koninklijke Philips Electronics N.V. A method of manufacturing a microsystem
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7417784B2 (en) * 2006-04-19 2008-08-26 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing a porous surface
WO2008103632A2 (en) * 2007-02-20 2008-08-28 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of mems
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
US8022490B2 (en) 2008-03-24 2011-09-20 Conexant Systems, Inc. Micro electro-mechanical sensor (MEMS) fabricated with ribbon wire bonds
DE102008028300B4 (en) * 2008-06-13 2021-10-07 Tdk Electronics Ag Flexible area printed circuit board and method of manufacture
RU2465681C2 (en) * 2009-02-19 2012-10-27 Государственное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Method of making detecting element for liquid and gas pressure sensor
US8393222B2 (en) 2010-02-27 2013-03-12 Codman Neuro Sciences Sárl Apparatus and method for minimizing drift of a piezo-resistive pressure sensor due to progressive release of mechanical stress over time
KR101184459B1 (en) 2010-05-06 2012-09-19 삼성전기주식회사 Pressure sensor
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
RU2477846C1 (en) * 2011-12-02 2013-03-20 Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт автоматики им. Н.Л. Духова" (ФГУП "ВНИИА") Absolute pressure transducer
CN102539029B (en) * 2012-02-29 2013-09-25 上海交通大学 Three-dimensional fluid stress sensor based on flexible MEMS (microelectromechanical system) technology and array thereof
FR3002219B1 (en) 2013-02-19 2015-04-10 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MICROMECHANICAL AND / OR NANOMECHANICAL STRUCTURE COMPRISING A POROUS SURFACE
DE102017213354A1 (en) * 2017-08-02 2019-02-07 Robert Bosch Gmbh Micromechanical pressure sensor device and corresponding manufacturing method
CN209326840U (en) 2018-12-27 2019-08-30 热敏碟公司 Pressure sensor and pressure transmitter
WO2022019167A1 (en) * 2020-07-21 2022-01-27 株式会社村田製作所 Pressure sensor structure, pressure sensor device, and pressure sensor structure manufacturing method

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Publication number Priority date Publication date Assignee Title
JPH0750789B2 (en) * 1986-07-18 1995-05-31 日産自動車株式会社 Method for manufacturing semiconductor pressure converter
US5177661A (en) * 1989-01-13 1993-01-05 Kopin Corporation SOI diaphgram sensor
US5506454A (en) * 1991-03-20 1996-04-09 Hitachi, Ltd. System and method for diagnosing characteristics of acceleration sensor
US5707077A (en) * 1991-11-18 1998-01-13 Hitachi, Ltd. Airbag system using three-dimensional acceleration sensor
US5802684A (en) * 1993-09-14 1998-09-08 Nikon Corporation Process for producing a vibration angular-velocity sensor
EP0714017B1 (en) * 1994-11-24 2000-07-12 Siemens Aktiengesellschaft Capacitive pressure sensor
FI100918B (en) * 1995-02-17 1998-03-13 Vaisala Oy Surface micromechanical, symmetrical differential pressure sensor
JPH08236784A (en) * 1995-02-23 1996-09-13 Tokai Rika Co Ltd Acceleration sensor and manufacture thereof
US5831162A (en) * 1997-01-21 1998-11-03 Delco Electronics Corporation Silicon micromachined motion sensor and method of making
JP3362714B2 (en) * 1998-11-16 2003-01-07 株式会社豊田中央研究所 Capacitive pressure sensor and method of manufacturing the same
US6816301B1 (en) * 1999-06-29 2004-11-09 Regents Of The University Of Minnesota Micro-electromechanical devices and methods of manufacture
DE10032579B4 (en) 2000-07-05 2020-07-02 Robert Bosch Gmbh Method for producing a semiconductor component and a semiconductor component produced by the method

Also Published As

Publication number Publication date
WO2002038491A1 (en) 2002-05-16
FI112644B (en) 2003-12-31
US6931935B2 (en) 2005-08-23
US20040020303A1 (en) 2004-02-05
ATE514652T1 (en) 2011-07-15
FI20002472A0 (en) 2000-11-10
RU2258914C2 (en) 2005-08-20
JP3857231B2 (en) 2006-12-13
JP2004513356A (en) 2004-04-30
EP1337458B1 (en) 2011-06-29
FI20002472A (en) 2002-05-11
CN1486277A (en) 2004-03-31
EP1337458A1 (en) 2003-08-27
CN1225400C (en) 2005-11-02

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