ATE509349T1 - Minderung der auswirkung von pogrammstörungen - Google Patents

Minderung der auswirkung von pogrammstörungen

Info

Publication number
ATE509349T1
ATE509349T1 AT07753758T AT07753758T ATE509349T1 AT E509349 T1 ATE509349 T1 AT E509349T1 AT 07753758 T AT07753758 T AT 07753758T AT 07753758 T AT07753758 T AT 07753758T AT E509349 T1 ATE509349 T1 AT E509349T1
Authority
AT
Austria
Prior art keywords
program
programming
during
volatile storage
impact
Prior art date
Application number
AT07753758T
Other languages
English (en)
Inventor
Gerrit Hemink
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/414,758 external-priority patent/US7436713B2/en
Priority claimed from US11/413,683 external-priority patent/US7499326B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE509349T1 publication Critical patent/ATE509349T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
AT07753758T 2006-04-12 2007-03-22 Minderung der auswirkung von pogrammstörungen ATE509349T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US79136506P 2006-04-12 2006-04-12
US11/414,758 US7436713B2 (en) 2006-04-12 2006-04-28 Reducing the impact of program disturb
US11/413,683 US7499326B2 (en) 2006-04-12 2006-04-28 Apparatus for reducing the impact of program disturb
PCT/US2007/007156 WO2007126680A1 (en) 2006-04-12 2007-03-22 Reducing the impact of program disturb

Publications (1)

Publication Number Publication Date
ATE509349T1 true ATE509349T1 (de) 2011-05-15

Family

ID=38432955

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07753758T ATE509349T1 (de) 2006-04-12 2007-03-22 Minderung der auswirkung von pogrammstörungen

Country Status (6)

Country Link
EP (1) EP2005438B1 (de)
JP (1) JP4995265B2 (de)
KR (1) KR101012131B1 (de)
AT (1) ATE509349T1 (de)
TW (1) TWI334607B (de)
WO (1) WO2007126680A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499326B2 (en) 2006-04-12 2009-03-03 Sandisk Corporation Apparatus for reducing the impact of program disturb
JP4960018B2 (ja) * 2006-05-31 2012-06-27 株式会社東芝 不揮発性半導体メモリ
US7848144B2 (en) * 2008-06-16 2010-12-07 Sandisk Corporation Reverse order page writing in flash memories

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3383429B2 (ja) * 1994-08-19 2003-03-04 株式会社東芝 不揮発性半導体記憶装置およびデータ書き込み方法
JPH10302488A (ja) * 1997-02-27 1998-11-13 Toshiba Corp 不揮発性半導体記憶装置
JP3481817B2 (ja) * 1997-04-07 2003-12-22 株式会社東芝 半導体記憶装置
US5978276A (en) * 1997-04-11 1999-11-02 Programmable Silicon Solutions Electrically erasable nonvolatile memory
JP2000285692A (ja) * 1999-04-01 2000-10-13 Sony Corp 不揮発性半導体記憶装置、並びにデータ書き込み方法およびデータ読み出し方法
US6717851B2 (en) * 2000-10-31 2004-04-06 Sandisk Corporation Method of reducing disturbs in non-volatile memory
JP4005895B2 (ja) * 2002-09-30 2007-11-14 株式会社東芝 不揮発性半導体メモリ装置
JP3913704B2 (ja) * 2003-04-22 2007-05-09 株式会社東芝 不揮発性半導体記憶装置及びこれを用いた電子装置
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory
JP4410188B2 (ja) * 2004-11-12 2010-02-03 株式会社東芝 半導体記憶装置のデータ書き込み方法
KR100680479B1 (ko) * 2005-04-11 2007-02-08 주식회사 하이닉스반도체 비휘발성 메모리 장치의 프로그램 검증 방법

Also Published As

Publication number Publication date
TWI334607B (en) 2010-12-11
EP2005438A1 (de) 2008-12-24
KR101012131B1 (ko) 2011-02-07
TW200746150A (en) 2007-12-16
JP2009533795A (ja) 2009-09-17
KR20090007296A (ko) 2009-01-16
WO2007126680A1 (en) 2007-11-08
EP2005438B1 (de) 2011-05-11
JP4995265B2 (ja) 2012-08-08

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties