ATE506706T1 - Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur - Google Patents

Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur

Info

Publication number
ATE506706T1
ATE506706T1 AT05447181T AT05447181T ATE506706T1 AT E506706 T1 ATE506706 T1 AT E506706T1 AT 05447181 T AT05447181 T AT 05447181T AT 05447181 T AT05447181 T AT 05447181T AT E506706 T1 ATE506706 T1 AT E506706T1
Authority
AT
Austria
Prior art keywords
semiconductor material
producing
contact structure
contact
interface
Prior art date
Application number
AT05447181T
Other languages
English (en)
Inventor
Vladimir Arkhipov
Paul Heremans
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE506706T1 publication Critical patent/ATE506706T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Manufacture Of Switches (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Conductive Materials (AREA)
AT05447181T 2004-08-13 2005-08-12 Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur ATE506706T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60119204P 2004-08-13 2004-08-13

Publications (1)

Publication Number Publication Date
ATE506706T1 true ATE506706T1 (de) 2011-05-15

Family

ID=35276070

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05447181T ATE506706T1 (de) 2004-08-13 2005-08-12 Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur

Country Status (4)

Country Link
US (1) US7659628B2 (de)
EP (1) EP1626449B1 (de)
AT (1) ATE506706T1 (de)
DE (1) DE602005027525D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100669762B1 (ko) * 2004-11-15 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
KR20110018764A (ko) * 2009-08-18 2011-02-24 삼성전자주식회사 나노와이어를 포함하는 태양전지 및 나노와이어의 형성방법
KR102377768B1 (ko) * 2015-06-27 2022-03-23 인텔 코포레이션 양자화된 금속들을 사용하여 반도체들에 대한 오믹 접촉들을 형성하는 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
US5652054A (en) * 1994-07-11 1997-07-29 Kabushiki Kaisha Toshiba Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix
JP3476035B2 (ja) 1995-02-10 2003-12-10 出光興産株式会社 有機エレクトロルミネッセンス素子
DE19518668A1 (de) * 1995-05-22 1996-11-28 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem
US6495442B1 (en) * 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6274933B1 (en) * 1999-01-26 2001-08-14 Agere Systems Guardian Corp. Integrated circuit device having a planar interlevel dielectric layer
EP1129990A1 (de) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Verfahren zum kontrolliertem Wachstum von Kohlenstoffnanoröhren
US6515310B2 (en) * 2000-05-06 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric apparatus
IL157406A0 (en) * 2001-02-26 2004-03-28 Yeda Res And Dev Company Ltd Y Method and apparatus for detecting and quantifying a chemical substance employing a spectral propertty of metallic islands
DE10153562A1 (de) * 2001-10-30 2003-05-15 Infineon Technologies Ag Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial
WO2005004196A2 (en) * 2002-08-23 2005-01-13 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
TWI230123B (en) * 2003-04-01 2005-04-01 Optimax Tech Corp Structure and fabricating method of optic protection film
US20050202615A1 (en) * 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays

Also Published As

Publication number Publication date
EP1626449B1 (de) 2011-04-20
EP1626449A3 (de) 2007-12-05
US7659628B2 (en) 2010-02-09
US20060033208A1 (en) 2006-02-16
EP1626449A2 (de) 2006-02-15
DE602005027525D1 (de) 2011-06-01

Similar Documents

Publication Publication Date Title
EP1416069A4 (de) Organisches halbleiterelement
EP1868241A4 (de) Submount und verfahren zu seiner herstellung
DE60204502D1 (de) Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
ATE491227T1 (de) Verfahren zur herstellung von interkonnektverbindungen für halbleiterkomponenten
ATE557419T1 (de) Verfahren zur herstellung eines halbleiterbauelements
DE60311678D1 (de) Verfahren zur herstellung von halbleitervorrichtungen mit mesastrukturen und vielfachen passivierungsschichten und verwandte vorrichtungen
ATE545152T1 (de) Durchkontaktierung durch einen wafer mit niedrigem widerstand
WO2004101177A3 (de) Verfahren zur beschichtung von substraten mit kohlenstoffbasiertem material
ID21598A (id) Substrat semikonduktor dan piranti semikonduktor dengan film tipis, metoda pembuatannya, dan peralatan oksidasi anoda
PT1363811E (pt) Processo de fabrico de um componente moldado para automovel, com uma pista condutora integrada e componente moldado de um automovel
DE60139463D1 (de) Prozess zur herstellung von dünnfilmtransistoren
ATE381523T1 (de) Gegenstand umfassend ein silizium enthaltendes substrat und eine hafniumoxid enthaltende sperrschicht an der oberfläche
TW200705541A (en) Manufacturing method of nano-sticker
SG169394A1 (en) Method for producing partial soi structures comprising zones connecting a superficial layer and a substrate
WO2007025521A3 (de) Verfahren zur herstellung eines halbleiterbauelements mit einer planaren kontaktierung und halbleiterbauelement
DE60220736D1 (de) Herstellungsverfahren für gebondetes Substrat
TW200644288A (en) Free standing substrate, method for manufacturing the same, and semiconductor light emitting element
ATE506706T1 (de) Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur
DE60232007D1 (de) Verfahren zur herstellung einer lichtempfindlichen keramischen zusammensetzung und mehrschichtiges substrat damit
DE602005021214D1 (de) Substrate zur elektronischen anwendung mit einem flexiblen träger und herstellungsverfahren dafür
TW200621844A (en) Cleaning substrate of substrate processing equipment and heat resistant resin preferable therefor
DE60236944D1 (de) Herstellungsverfahren für einen anneal-wafer
EP1592050A4 (de) Herstellungsverfahren für halbdurchsichtiges, halbreflektierendes elektrodensubstrat, substrat mit reflektierendem element, herstellungsverfahren dafür und beim herstellungsverfahren für das reflektierende elektrodensubstrat verwendete ätzzusammensetzung
TW200629382A (en) Metal oxide layer formed on substrates and its fabrication methods
TW200632155A (en) Semiconductor wafer having a semiconductor layer and an electrically insulating layer beneath it, and process for producing it

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties