ATE506706T1 - Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur - Google Patents

Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur

Info

Publication number
ATE506706T1
ATE506706T1 AT05447181T AT05447181T ATE506706T1 AT E506706 T1 ATE506706 T1 AT E506706T1 AT 05447181 T AT05447181 T AT 05447181T AT 05447181 T AT05447181 T AT 05447181T AT E506706 T1 ATE506706 T1 AT E506706T1
Authority
AT
Austria
Prior art keywords
semiconductor material
producing
contact structure
contact
interface
Prior art date
Application number
AT05447181T
Other languages
English (en)
Inventor
Vladimir Arkhipov
Paul Heremans
Original Assignee
Imec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec filed Critical Imec
Application granted granted Critical
Publication of ATE506706T1 publication Critical patent/ATE506706T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Conductive Materials (AREA)
  • Manufacture Of Switches (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
AT05447181T 2004-08-13 2005-08-12 Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur ATE506706T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60119204P 2004-08-13 2004-08-13

Publications (1)

Publication Number Publication Date
ATE506706T1 true ATE506706T1 (de) 2011-05-15

Family

ID=35276070

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05447181T ATE506706T1 (de) 2004-08-13 2005-08-12 Kontaktstruktur für ein halbleitermaterial und methode zur herstellung einer solchen struktur

Country Status (4)

Country Link
US (1) US7659628B2 (de)
EP (1) EP1626449B1 (de)
AT (1) ATE506706T1 (de)
DE (1) DE602005027525D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100669762B1 (ko) * 2004-11-15 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
KR20110018764A (ko) * 2009-08-18 2011-02-24 삼성전자주식회사 나노와이어를 포함하는 태양전지 및 나노와이어의 형성방법
CN107636804B (zh) * 2015-06-27 2022-06-07 英特尔公司 用以使用量化金属形成与半导体的欧姆接触的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
US5652054A (en) * 1994-07-11 1997-07-29 Kabushiki Kaisha Toshiba Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix
JP3476035B2 (ja) 1995-02-10 2003-12-10 出光興産株式会社 有機エレクトロルミネッセンス素子
DE19518668A1 (de) * 1995-05-22 1996-11-28 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem
US6495442B1 (en) * 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6274933B1 (en) * 1999-01-26 2001-08-14 Agere Systems Guardian Corp. Integrated circuit device having a planar interlevel dielectric layer
EP1129990A1 (de) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Verfahren zum kontrolliertem Wachstum von Kohlenstoffnanoröhren
US6515310B2 (en) * 2000-05-06 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric apparatus
EP1373872A4 (de) * 2001-02-26 2009-04-22 Yeda Res & Dev Verfahren und vorrichtung zum nachweis und zur quantifizierung einer chemischen substanz unter verwendung einer spektraleigenschaft metallischer inseln
DE10153562A1 (de) * 2001-10-30 2003-05-15 Infineon Technologies Ag Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial
WO2005004196A2 (en) * 2002-08-23 2005-01-13 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
TWI230123B (en) * 2003-04-01 2005-04-01 Optimax Tech Corp Structure and fabricating method of optic protection film
US20050202615A1 (en) * 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays

Also Published As

Publication number Publication date
EP1626449A3 (de) 2007-12-05
EP1626449B1 (de) 2011-04-20
EP1626449A2 (de) 2006-02-15
DE602005027525D1 (de) 2011-06-01
US20060033208A1 (en) 2006-02-16
US7659628B2 (en) 2010-02-09

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties