DE602005027525D1 - Kontaktstruktur für ein Halbleitermaterial und Methode zur Herstellung einer solchen Struktur - Google Patents

Kontaktstruktur für ein Halbleitermaterial und Methode zur Herstellung einer solchen Struktur

Info

Publication number
DE602005027525D1
DE602005027525D1 DE602005027525T DE602005027525T DE602005027525D1 DE 602005027525 D1 DE602005027525 D1 DE 602005027525D1 DE 602005027525 T DE602005027525 T DE 602005027525T DE 602005027525 T DE602005027525 T DE 602005027525T DE 602005027525 D1 DE602005027525 D1 DE 602005027525D1
Authority
DE
Germany
Prior art keywords
semiconductor material
producing
contact structure
contact
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005027525T
Other languages
English (en)
Inventor
Vladimir Arkhipov
Paul Heremans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE602005027525D1 publication Critical patent/DE602005027525D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Conductive Materials (AREA)
  • Manufacture Of Switches (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE602005027525T 2004-08-13 2005-08-12 Kontaktstruktur für ein Halbleitermaterial und Methode zur Herstellung einer solchen Struktur Active DE602005027525D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60119204P 2004-08-13 2004-08-13

Publications (1)

Publication Number Publication Date
DE602005027525D1 true DE602005027525D1 (de) 2011-06-01

Family

ID=35276070

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005027525T Active DE602005027525D1 (de) 2004-08-13 2005-08-12 Kontaktstruktur für ein Halbleitermaterial und Methode zur Herstellung einer solchen Struktur

Country Status (4)

Country Link
US (1) US7659628B2 (de)
EP (1) EP1626449B1 (de)
AT (1) ATE506706T1 (de)
DE (1) DE602005027525D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100669762B1 (ko) * 2004-11-15 2007-01-16 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
KR20110018764A (ko) * 2009-08-18 2011-02-24 삼성전자주식회사 나노와이어를 포함하는 태양전지 및 나노와이어의 형성방법
KR102377768B1 (ko) * 2015-06-27 2022-03-23 인텔 코포레이션 양자화된 금속들을 사용하여 반도체들에 대한 오믹 접촉들을 형성하는 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663559A (en) * 1982-09-17 1987-05-05 Christensen Alton O Field emission device
US5652054A (en) * 1994-07-11 1997-07-29 Kabushiki Kaisha Toshiba Magnetic recording media having a magnetic thin film made of magnetic metals grains and nonmagnetic matrix
JP3476035B2 (ja) 1995-02-10 2003-12-10 出光興産株式会社 有機エレクトロルミネッセンス素子
DE19518668A1 (de) 1995-05-22 1996-11-28 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem
US6495442B1 (en) * 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6274933B1 (en) * 1999-01-26 2001-08-14 Agere Systems Guardian Corp. Integrated circuit device having a planar interlevel dielectric layer
EP1129990A1 (de) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Verfahren zum kontrolliertem Wachstum von Kohlenstoffnanoröhren
US6515310B2 (en) 2000-05-06 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric apparatus
WO2002068943A1 (en) * 2001-02-26 2002-09-06 Yeda Research And Development Co. Ltd. Method and apparatus for detecting and quantifying a chemical substance employing a spectral property of metallic islands
DE10153562A1 (de) 2001-10-30 2003-05-15 Infineon Technologies Ag Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial
WO2005004196A2 (en) * 2002-08-23 2005-01-13 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
TWI230123B (en) * 2003-04-01 2005-04-01 Optimax Tech Corp Structure and fabricating method of optic protection film
US20050202615A1 (en) * 2004-03-10 2005-09-15 Nanosys, Inc. Nano-enabled memory devices and anisotropic charge carrying arrays

Also Published As

Publication number Publication date
EP1626449A3 (de) 2007-12-05
ATE506706T1 (de) 2011-05-15
US20060033208A1 (en) 2006-02-16
US7659628B2 (en) 2010-02-09
EP1626449B1 (de) 2011-04-20
EP1626449A2 (de) 2006-02-15

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