ATE468609T1 - Speicherzelle, speicher mit der speicherzelle, speicherzellenherstellungsverfahren und speicheraufzeichnungs-/leseverfahren - Google Patents
Speicherzelle, speicher mit der speicherzelle, speicherzellenherstellungsverfahren und speicheraufzeichnungs-/leseverfahrenInfo
- Publication number
- ATE468609T1 ATE468609T1 AT04724761T AT04724761T ATE468609T1 AT E468609 T1 ATE468609 T1 AT E468609T1 AT 04724761 T AT04724761 T AT 04724761T AT 04724761 T AT04724761 T AT 04724761T AT E468609 T1 ATE468609 T1 AT E468609T1
- Authority
- AT
- Austria
- Prior art keywords
- memory
- memory cell
- magnetic device
- recording
- memory medium
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003096246 | 2003-03-31 | ||
JP2003188057 | 2003-06-30 | ||
PCT/JP2004/004650 WO2004088754A1 (ja) | 2003-03-31 | 2004-03-31 | メモリセルとこれを用いたメモリおよびメモリセルの製造方法ならびにメモリの記録/読出方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE468609T1 true ATE468609T1 (de) | 2010-06-15 |
Family
ID=33134323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04724761T ATE468609T1 (de) | 2003-03-31 | 2004-03-31 | Speicherzelle, speicher mit der speicherzelle, speicherzellenherstellungsverfahren und speicheraufzeichnungs-/leseverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US7436697B2 (de) |
EP (1) | EP1610387B1 (de) |
JP (1) | JPWO2004088754A1 (de) |
KR (1) | KR101006669B1 (de) |
AT (1) | ATE468609T1 (de) |
DE (1) | DE602004027227D1 (de) |
WO (1) | WO2004088754A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004047610B4 (de) * | 2004-09-30 | 2006-08-24 | Infineon Technologies Ag | Integrierte Speicher-Schaltungsanordnung mit Tunnel-Feldeffekttransistor als Ansteuertransistor |
US7701756B2 (en) * | 2005-12-21 | 2010-04-20 | Governing Council Of The University Of Toronto | Magnetic memory composition and method of manufacture |
WO2012081311A1 (ja) * | 2010-12-16 | 2012-06-21 | 株式会社村田製作所 | 電池 |
KR20140035013A (ko) * | 2012-09-12 | 2014-03-21 | 삼성전자주식회사 | 자기장 생성부 및 이것을 포함하는 반도체 테스트 장치 |
US10249682B2 (en) | 2017-08-23 | 2019-04-02 | Sandisk Technologies Llc | Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells |
US10217795B1 (en) * | 2017-08-23 | 2019-02-26 | Sandisk Technologies Llc | Memory cell for non-volatile memory system |
US10283562B2 (en) | 2017-08-23 | 2019-05-07 | Sandisk Technologies Llc | Process for fabricating three dimensional non-volatile memory system |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5768092A (en) | 1980-10-15 | 1982-04-26 | Hitachi Ltd | Semiconductor memory device |
US5094925A (en) * | 1989-06-30 | 1992-03-10 | Sharp Kabushiki Kaisha | Opto-magnetic recording medium |
JP2567996B2 (ja) | 1991-01-23 | 1996-12-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 光磁気記録方法及び装置 |
CN1066561A (zh) | 1991-05-10 | 1992-12-02 | 中国人民解放军南京军区后勤部军事医学研究所 | 长效灭蟑剂及其制造方法和应用 |
US5295097A (en) * | 1992-08-05 | 1994-03-15 | Lienau Richard M | Nonvolatile random access memory |
EP0686970A3 (de) * | 1994-06-10 | 1996-07-24 | Canon Kk | Magneto-optisches Aufzeichnungsmedium und Wiedergabemethode dafür |
JPH10269502A (ja) * | 1997-03-26 | 1998-10-09 | Fujitsu Ltd | 磁気記録方法および磁気ディスク装置 |
US6153443A (en) * | 1998-12-21 | 2000-11-28 | Motorola, Inc. | Method of fabricating a magnetic random access memory |
JP2001244123A (ja) * | 2000-02-28 | 2001-09-07 | Kawatetsu Mining Co Ltd | 表面実装型平面磁気素子及びその製造方法 |
JP2001332081A (ja) | 2000-05-17 | 2001-11-30 | Canon Inc | 磁気メモリ及びそれを用いた半導体記憶装置 |
JP4982025B2 (ja) | 2000-06-23 | 2012-07-25 | エヌエックスピー ビー ヴィ | 磁気メモリ |
AU2002232848A1 (en) | 2000-10-20 | 2002-04-29 | Dan Carothers | Non-volatile magnetic memory device |
DE10140606B8 (de) | 2001-08-18 | 2005-03-31 | Robert Bosch Gmbh | Integriertes Speicher- und Sensierelement auf Basis des GMR-Effektes |
US7239570B2 (en) * | 2003-05-20 | 2007-07-03 | Magsil Corporation | Magnetic memory device and method for magnetic reading and writing |
US7088612B2 (en) * | 2004-08-20 | 2006-08-08 | Infineon Technologies Ag | MRAM with vertical storage element in two layer-arrangement and field sensor |
US7200032B2 (en) * | 2004-08-20 | 2007-04-03 | Infineon Technologies Ag | MRAM with vertical storage element and field sensor |
-
2004
- 2004-03-31 WO PCT/JP2004/004650 patent/WO2004088754A1/ja active Application Filing
- 2004-03-31 AT AT04724761T patent/ATE468609T1/de not_active IP Right Cessation
- 2004-03-31 US US10/551,500 patent/US7436697B2/en not_active Expired - Fee Related
- 2004-03-31 JP JP2005504277A patent/JPWO2004088754A1/ja not_active Withdrawn
- 2004-03-31 EP EP04724761A patent/EP1610387B1/de not_active Expired - Lifetime
- 2004-03-31 KR KR1020057015824A patent/KR101006669B1/ko not_active IP Right Cessation
- 2004-03-31 DE DE602004027227T patent/DE602004027227D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2004088754A1 (ja) | 2004-10-14 |
EP1610387B1 (de) | 2010-05-19 |
DE602004027227D1 (de) | 2010-07-01 |
KR20050114220A (ko) | 2005-12-05 |
US20060256609A1 (en) | 2006-11-16 |
US7436697B2 (en) | 2008-10-14 |
EP1610387A4 (de) | 2007-09-05 |
EP1610387A1 (de) | 2005-12-28 |
KR101006669B1 (ko) | 2011-01-10 |
JPWO2004088754A1 (ja) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |