ATE430993T1 - Lichtemittierende halbleiterdiode und herstellungsverfahren dafür - Google Patents

Lichtemittierende halbleiterdiode und herstellungsverfahren dafür

Info

Publication number
ATE430993T1
ATE430993T1 AT04773551T AT04773551T ATE430993T1 AT E430993 T1 ATE430993 T1 AT E430993T1 AT 04773551 T AT04773551 T AT 04773551T AT 04773551 T AT04773551 T AT 04773551T AT E430993 T1 ATE430993 T1 AT E430993T1
Authority
AT
Austria
Prior art keywords
light
electrodes
semiconductor
mount
semiconductor layers
Prior art date
Application number
AT04773551T
Other languages
English (en)
Inventor
Kenichiro Tanaka
Masao Kubo
Original Assignee
Panasonic Elec Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Elec Works Co Ltd filed Critical Panasonic Elec Works Co Ltd
Application granted granted Critical
Publication of ATE430993T1 publication Critical patent/ATE430993T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
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    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L2933/0008—Processes
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    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
AT04773551T 2003-09-24 2004-09-24 Lichtemittierende halbleiterdiode und herstellungsverfahren dafür ATE430993T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003331060 2003-09-24
PCT/JP2004/014464 WO2005029599A2 (en) 2003-09-24 2004-09-24 Semiconductor light-emitting device and its manufacturing method

Publications (1)

Publication Number Publication Date
ATE430993T1 true ATE430993T1 (de) 2009-05-15

Family

ID=34373033

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04773551T ATE430993T1 (de) 2003-09-24 2004-09-24 Lichtemittierende halbleiterdiode und herstellungsverfahren dafür

Country Status (9)

Country Link
US (2) US7956377B2 (de)
EP (1) EP1665400B1 (de)
JP (1) JP4440928B2 (de)
KR (1) KR100728693B1 (de)
CN (1) CN100446280C (de)
AT (1) ATE430993T1 (de)
DE (1) DE602004021008D1 (de)
TW (1) TWI246783B (de)
WO (1) WO2005029599A2 (de)

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US20090186431A1 (en) 2009-07-23
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US7956377B2 (en) 2011-06-07
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US7923270B2 (en) 2011-04-12
TWI246783B (en) 2006-01-01
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